JP7584713B1 - パワー半導体装置の製造方法 - Google Patents

パワー半導体装置の製造方法 Download PDF

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Publication number
JP7584713B1
JP7584713B1 JP2024539066A JP2024539066A JP7584713B1 JP 7584713 B1 JP7584713 B1 JP 7584713B1 JP 2024539066 A JP2024539066 A JP 2024539066A JP 2024539066 A JP2024539066 A JP 2024539066A JP 7584713 B1 JP7584713 B1 JP 7584713B1
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silicon wafer
main surface
manufacturing
semiconductor device
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JPWO2025191681A5 (https=
JPWO2025191681A1 (https=
Inventor
明 清井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Electrodes Of Semiconductors (AREA)
JP2024539066A 2024-03-12 2024-03-12 パワー半導体装置の製造方法 Active JP7584713B1 (ja)

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PCT/JP2024/009540 WO2025191681A1 (ja) 2024-03-12 2024-03-12 パワー半導体装置の製造方法

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JP7584713B1 true JP7584713B1 (ja) 2024-11-15
JPWO2025191681A1 JPWO2025191681A1 (https=) 2025-09-18
JPWO2025191681A5 JPWO2025191681A5 (https=) 2026-02-18

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JP (1) JP7584713B1 (https=)
WO (1) WO2025191681A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016051973A1 (ja) * 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2022035157A (ja) * 2020-08-20 2022-03-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2023062606A (ja) * 2021-10-21 2023-05-08 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016051973A1 (ja) * 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2022035157A (ja) * 2020-08-20 2022-03-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2023062606A (ja) * 2021-10-21 2023-05-08 三菱電機株式会社 半導体装置および半導体装置の製造方法

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WO2025191681A1 (ja) 2025-09-18
JPWO2025191681A1 (https=) 2025-09-18

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