JPS62232796A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS62232796A
JPS62232796A JP61074979A JP7497986A JPS62232796A JP S62232796 A JPS62232796 A JP S62232796A JP 61074979 A JP61074979 A JP 61074979A JP 7497986 A JP7497986 A JP 7497986A JP S62232796 A JPS62232796 A JP S62232796A
Authority
JP
Japan
Prior art keywords
memory cell
sense amplifier
capacitor
mos transistor
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61074979A
Other languages
English (en)
Japanese (ja)
Inventor
Shigeyoshi Watanabe
重佳 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61074979A priority Critical patent/JPS62232796A/ja
Priority to US07/031,615 priority patent/US4811290A/en
Priority to KR1019870003079A priority patent/KR910000152B1/ko
Priority to DE19873710821 priority patent/DE3710821A1/de
Publication of JPS62232796A publication Critical patent/JPS62232796A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP61074979A 1986-04-01 1986-04-01 半導体記憶装置 Pending JPS62232796A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61074979A JPS62232796A (ja) 1986-04-01 1986-04-01 半導体記憶装置
US07/031,615 US4811290A (en) 1986-04-01 1987-03-30 Semiconductor memory device
KR1019870003079A KR910000152B1 (ko) 1986-04-01 1987-04-01 반도체기억장치
DE19873710821 DE3710821A1 (de) 1986-04-01 1987-04-01 Halbleiterspeichereinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61074979A JPS62232796A (ja) 1986-04-01 1986-04-01 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPS62232796A true JPS62232796A (ja) 1987-10-13

Family

ID=13562916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61074979A Pending JPS62232796A (ja) 1986-04-01 1986-04-01 半導体記憶装置

Country Status (4)

Country Link
US (1) US4811290A (enExample)
JP (1) JPS62232796A (enExample)
KR (1) KR910000152B1 (enExample)
DE (1) DE3710821A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132932A (en) * 1989-05-19 1992-07-21 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having a plurality of rated voltages as operation supply voltage and operating method thereof

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953130A (en) * 1988-06-27 1990-08-28 Texas Instruments, Incorporated Memory circuit with extended valid data output time
JP3066595B2 (ja) * 1989-06-20 2000-07-17 日本テキサス・インスツルメンツ株式会社 駆動回路
JP2825135B2 (ja) * 1990-03-06 1998-11-18 富士通株式会社 半導体記憶装置及びその情報書込読出消去方法
JPH0834058B2 (ja) * 1990-03-19 1996-03-29 シャープ株式会社 半導体メモリ装置
JPH05266663A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体記憶装置
DE69531823T2 (de) * 1995-07-28 2004-07-01 Stmicroelectronics S.R.L., Agrate Brianza Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung
EP0756285B1 (en) * 1995-07-28 2000-07-05 STMicroelectronics S.r.l. Modulated slope signal generation circuit, particularly for latch data sensing arrangements
JPH0955088A (ja) * 1995-08-11 1997-02-25 Nec Corp 半導体メモリ
DE69633774D1 (de) * 1996-03-29 2004-12-09 St Microelectronics Srl Referenzwortleitung und Datenlaufzeitwiedergabeschaltung, insbesondere für nichtflüssige Speicher mit hierarchischen Dekodern
US5912853A (en) * 1996-12-03 1999-06-15 Cirrus Logic, Inc. Precision sense amplifiers and memories, systems and methods using the same
US5901092A (en) * 1997-08-22 1999-05-04 Micron Technology, Inc. Memory device having pipelined access and method for pipelining data access
KR100275107B1 (ko) 1997-12-30 2000-12-15 김영환 강유전체메모리장치및그구동방법
US9494647B1 (en) * 2013-12-31 2016-11-15 Gsi Technology, Inc. Systems and methods involving data inversion devices, circuitry, schemes and/or related aspects

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2623219B2 (de) * 1976-05-24 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132932A (en) * 1989-05-19 1992-07-21 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having a plurality of rated voltages as operation supply voltage and operating method thereof
US5315550A (en) * 1989-05-19 1994-05-24 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having sense amplifier activation delayed based on operation supply voltage and operating method thereof
US5418747A (en) * 1989-05-19 1995-05-23 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having a plurality of rated voltages as operation supply voltage and operating method thereof

Also Published As

Publication number Publication date
KR870010549A (ko) 1987-11-30
US4811290A (en) 1989-03-07
DE3710821C2 (enExample) 1989-12-28
KR910000152B1 (ko) 1991-01-21
DE3710821A1 (de) 1987-10-15

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