KR910000152B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR910000152B1
KR910000152B1 KR1019870003079A KR870003079A KR910000152B1 KR 910000152 B1 KR910000152 B1 KR 910000152B1 KR 1019870003079 A KR1019870003079 A KR 1019870003079A KR 870003079 A KR870003079 A KR 870003079A KR 910000152 B1 KR910000152 B1 KR 910000152B1
Authority
KR
South Korea
Prior art keywords
capacitor
memory cell
capacity
cell
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870003079A
Other languages
English (en)
Korean (ko)
Other versions
KR870010549A (ko
Inventor
시게요시 와타나베
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR870010549A publication Critical patent/KR870010549A/ko
Application granted granted Critical
Publication of KR910000152B1 publication Critical patent/KR910000152B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019870003079A 1986-04-01 1987-04-01 반도체기억장치 Expired KR910000152B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61074979A JPS62232796A (ja) 1986-04-01 1986-04-01 半導体記憶装置
JP74979 1986-04-01

Publications (2)

Publication Number Publication Date
KR870010549A KR870010549A (ko) 1987-11-30
KR910000152B1 true KR910000152B1 (ko) 1991-01-21

Family

ID=13562916

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870003079A Expired KR910000152B1 (ko) 1986-04-01 1987-04-01 반도체기억장치

Country Status (4)

Country Link
US (1) US4811290A (enExample)
JP (1) JPS62232796A (enExample)
KR (1) KR910000152B1 (enExample)
DE (1) DE3710821A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953130A (en) * 1988-06-27 1990-08-28 Texas Instruments, Incorporated Memory circuit with extended valid data output time
JP2614514B2 (ja) * 1989-05-19 1997-05-28 三菱電機株式会社 ダイナミック・ランダム・アクセス・メモリ
JP3066595B2 (ja) * 1989-06-20 2000-07-17 日本テキサス・インスツルメンツ株式会社 駆動回路
JP2825135B2 (ja) * 1990-03-06 1998-11-18 富士通株式会社 半導体記憶装置及びその情報書込読出消去方法
JPH0834058B2 (ja) * 1990-03-19 1996-03-29 シャープ株式会社 半導体メモリ装置
JPH05266663A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体記憶装置
EP0756285B1 (en) * 1995-07-28 2000-07-05 STMicroelectronics S.r.l. Modulated slope signal generation circuit, particularly for latch data sensing arrangements
DE69531823T2 (de) * 1995-07-28 2004-07-01 Stmicroelectronics S.R.L., Agrate Brianza Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung
JPH0955088A (ja) * 1995-08-11 1997-02-25 Nec Corp 半導体メモリ
EP0798729B1 (en) * 1996-03-29 2004-11-03 STMicroelectronics S.r.l. Reference word line and data propagation reproduction circuit, particularly for non-volatile memories provided with hierarchical decoders
US5912853A (en) * 1996-12-03 1999-06-15 Cirrus Logic, Inc. Precision sense amplifiers and memories, systems and methods using the same
US5901092A (en) * 1997-08-22 1999-05-04 Micron Technology, Inc. Memory device having pipelined access and method for pipelining data access
KR100275107B1 (ko) 1997-12-30 2000-12-15 김영환 강유전체메모리장치및그구동방법
US9494647B1 (en) * 2013-12-31 2016-11-15 Gsi Technology, Inc. Systems and methods involving data inversion devices, circuitry, schemes and/or related aspects

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2623219B2 (de) * 1976-05-24 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory

Also Published As

Publication number Publication date
KR870010549A (ko) 1987-11-30
JPS62232796A (ja) 1987-10-13
DE3710821C2 (enExample) 1989-12-28
US4811290A (en) 1989-03-07
DE3710821A1 (de) 1987-10-15

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