JPS62226668A - 薄膜トランジスタ - Google Patents
薄膜トランジスタInfo
- Publication number
- JPS62226668A JPS62226668A JP61070224A JP7022486A JPS62226668A JP S62226668 A JPS62226668 A JP S62226668A JP 61070224 A JP61070224 A JP 61070224A JP 7022486 A JP7022486 A JP 7022486A JP S62226668 A JPS62226668 A JP S62226668A
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate
- insulating film
- film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61070224A JPS62226668A (ja) | 1986-03-27 | 1986-03-27 | 薄膜トランジスタ |
DE19863640174 DE3640174A1 (de) | 1985-11-27 | 1986-11-25 | Duennfilm-transistor-anordnung |
GB8628172A GB2185622B (en) | 1985-11-27 | 1986-11-25 | Thin film transistor array |
US07/267,680 US4935792A (en) | 1985-11-27 | 1988-11-01 | Thin film transistor array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61070224A JPS62226668A (ja) | 1986-03-27 | 1986-03-27 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62226668A true JPS62226668A (ja) | 1987-10-05 |
JPH0563026B2 JPH0563026B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=13425363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61070224A Granted JPS62226668A (ja) | 1985-11-27 | 1986-03-27 | 薄膜トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62226668A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3714164A1 (de) * | 1986-04-30 | 1987-11-05 | Sharp Kk | Fluessigkristallanzeige |
JPH01123475A (ja) * | 1987-11-06 | 1989-05-16 | Sharp Corp | 液晶表示装置 |
JPH02150060A (ja) * | 1988-11-30 | 1990-06-08 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
EP0681325A3 (en) * | 1994-04-28 | 1997-04-23 | Xerox Corp | Structure of thin layers with insulation and planarization layer between crossing lines. |
EP0813251A3 (en) * | 1993-04-23 | 1998-01-14 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
CN1333286C (zh) * | 2003-11-10 | 2007-08-22 | 友达光电股份有限公司 | 防止电极线断线的平面显示器 |
-
1986
- 1986-03-27 JP JP61070224A patent/JPS62226668A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3714164A1 (de) * | 1986-04-30 | 1987-11-05 | Sharp Kk | Fluessigkristallanzeige |
JPH01123475A (ja) * | 1987-11-06 | 1989-05-16 | Sharp Corp | 液晶表示装置 |
JPH02150060A (ja) * | 1988-11-30 | 1990-06-08 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
EP0813251A3 (en) * | 1993-04-23 | 1998-01-14 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
EP0681325A3 (en) * | 1994-04-28 | 1997-04-23 | Xerox Corp | Structure of thin layers with insulation and planarization layer between crossing lines. |
CN1333286C (zh) * | 2003-11-10 | 2007-08-22 | 友达光电股份有限公司 | 防止电极线断线的平面显示器 |
Also Published As
Publication number | Publication date |
---|---|
JPH0563026B2 (enrdf_load_stackoverflow) | 1993-09-09 |
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