JPS62138529A - 有機シリコ−ン薄膜の形成方法 - Google Patents

有機シリコ−ン薄膜の形成方法

Info

Publication number
JPS62138529A
JPS62138529A JP60279463A JP27946385A JPS62138529A JP S62138529 A JPS62138529 A JP S62138529A JP 60279463 A JP60279463 A JP 60279463A JP 27946385 A JP27946385 A JP 27946385A JP S62138529 A JPS62138529 A JP S62138529A
Authority
JP
Japan
Prior art keywords
thin film
organic silicone
silicone thin
organic
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60279463A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043764B2 (enExample
Inventor
Hirofumi Fujioka
弘文 藤岡
Masami Inoue
井上　正己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60279463A priority Critical patent/JPS62138529A/ja
Publication of JPS62138529A publication Critical patent/JPS62138529A/ja
Publication of JPH043764B2 publication Critical patent/JPH043764B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Silicon Polymers (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP60279463A 1985-12-10 1985-12-10 有機シリコ−ン薄膜の形成方法 Granted JPS62138529A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60279463A JPS62138529A (ja) 1985-12-10 1985-12-10 有機シリコ−ン薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60279463A JPS62138529A (ja) 1985-12-10 1985-12-10 有機シリコ−ン薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPS62138529A true JPS62138529A (ja) 1987-06-22
JPH043764B2 JPH043764B2 (enExample) 1992-01-24

Family

ID=17611416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60279463A Granted JPS62138529A (ja) 1985-12-10 1985-12-10 有機シリコ−ン薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPS62138529A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316757A (ja) * 1993-04-28 1994-11-15 Kawasaki Heavy Ind Ltd 紫外レーザーによる有機多層膜製造方法
JP2002164347A (ja) * 2000-08-12 2002-06-07 Applied Materials Inc 有機ケイ酸塩層を堆積する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124729A (ja) * 1983-01-05 1984-07-18 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜形成方法
JPS6013065A (ja) * 1983-07-01 1985-01-23 Stanley Electric Co Ltd 固体表面の撥水性処理方法
JPS60190566A (ja) * 1984-03-12 1985-09-28 Semiconductor Energy Lab Co Ltd 窒化珪素作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124729A (ja) * 1983-01-05 1984-07-18 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜形成方法
JPS6013065A (ja) * 1983-07-01 1985-01-23 Stanley Electric Co Ltd 固体表面の撥水性処理方法
JPS60190566A (ja) * 1984-03-12 1985-09-28 Semiconductor Energy Lab Co Ltd 窒化珪素作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316757A (ja) * 1993-04-28 1994-11-15 Kawasaki Heavy Ind Ltd 紫外レーザーによる有機多層膜製造方法
JP2002164347A (ja) * 2000-08-12 2002-06-07 Applied Materials Inc 有機ケイ酸塩層を堆積する方法

Also Published As

Publication number Publication date
JPH043764B2 (enExample) 1992-01-24

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