JPS6212665B2 - - Google Patents

Info

Publication number
JPS6212665B2
JPS6212665B2 JP53095241A JP9524178A JPS6212665B2 JP S6212665 B2 JPS6212665 B2 JP S6212665B2 JP 53095241 A JP53095241 A JP 53095241A JP 9524178 A JP9524178 A JP 9524178A JP S6212665 B2 JPS6212665 B2 JP S6212665B2
Authority
JP
Japan
Prior art keywords
semiconductor region
type semiconductor
region
channel
sitl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53095241A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5521187A (en
Inventor
Yasutaka Horiba
Takao Nakano
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9524178A priority Critical patent/JPS5521187A/ja
Publication of JPS5521187A publication Critical patent/JPS5521187A/ja
Publication of JPS6212665B2 publication Critical patent/JPS6212665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
JP9524178A 1978-08-03 1978-08-03 Semiconductor device Granted JPS5521187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9524178A JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9524178A JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5521187A JPS5521187A (en) 1980-02-15
JPS6212665B2 true JPS6212665B2 (enrdf_load_stackoverflow) 1987-03-19

Family

ID=14132250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9524178A Granted JPS5521187A (en) 1978-08-03 1978-08-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521187A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095177U (ja) * 1983-12-06 1985-06-28 内田油圧機器工業株式会社 アキシヤルピストン形油圧モ−タ装置
JP2008080812A (ja) * 2007-11-09 2008-04-10 Dainippon Printing Co Ltd 通帳
JP2014126020A (ja) * 2012-12-27 2014-07-07 Kawasaki Heavy Ind Ltd アキシャルピストンモータ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55915B2 (enrdf_load_stackoverflow) * 1973-11-30 1980-01-10
JPS5425172A (en) * 1977-07-27 1979-02-24 Nippon Gakki Seizo Kk Longitudinal junction field effect transistor
JPS59981A (ja) * 1982-06-25 1984-01-06 Nec Corp レ−ザ・ダイオ−ド駆動回路

Also Published As

Publication number Publication date
JPS5521187A (en) 1980-02-15

Similar Documents

Publication Publication Date Title
US6713794B2 (en) Lateral semiconductor device
US5146298A (en) Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor
US6657262B2 (en) Monolithically integrated electronic device and fabrication process therefor
KR920005513B1 (ko) 기생트랜지스터가 동작하기 어려운 구조를 가진 반도체 장치 및 그 제조방법
JPH01198076A (ja) 半導体装置
KR910006672B1 (ko) 반도체 집적회로 장치 및 그의 제조 방법
JPS63141375A (ja) 絶縁ゲ−ト電界効果トランジスタ
JPS6212665B2 (enrdf_load_stackoverflow)
JPS6228586B2 (enrdf_load_stackoverflow)
JP2808882B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPH03145163A (ja) サイリスタ
CA1097408A (en) Inverter in an integrated injection logic structure
US4656498A (en) Oxide-isolated integrated Schottky logic
JPS6020571A (ja) 半導体装置
JPS59198749A (ja) 相補形電界効果トランジスタ
JPS6258678A (ja) トランジスタ
JPS6225267B2 (enrdf_load_stackoverflow)
JPH08172100A (ja) 半導体装置
JPS62104068A (ja) 半導体集積回路装置
JPS6381862A (ja) 絶縁ゲ−ト型バイポ−ラトランジスタ
JPH0321055A (ja) 半導体集積回路装置およびその製造方法
JP3071819B2 (ja) 絶縁ゲート型半導体装置
JPS5910592B2 (ja) 半導体装置およびその製造方法
JPS6129550B2 (enrdf_load_stackoverflow)
JPS59980B2 (ja) 静電誘導型半導体論理回路装置