JPS6225267B2 - - Google Patents

Info

Publication number
JPS6225267B2
JPS6225267B2 JP54068264A JP6826479A JPS6225267B2 JP S6225267 B2 JPS6225267 B2 JP S6225267B2 JP 54068264 A JP54068264 A JP 54068264A JP 6826479 A JP6826479 A JP 6826479A JP S6225267 B2 JPS6225267 B2 JP S6225267B2
Authority
JP
Japan
Prior art keywords
region
semiconductor region
semiconductor
type semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54068264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55160458A (en
Inventor
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6826479A priority Critical patent/JPS55160458A/ja
Publication of JPS55160458A publication Critical patent/JPS55160458A/ja
Publication of JPS6225267B2 publication Critical patent/JPS6225267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6826479A 1979-05-31 1979-05-31 Electrostatic induction type semiconductor logic circuit device Granted JPS55160458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6826479A JPS55160458A (en) 1979-05-31 1979-05-31 Electrostatic induction type semiconductor logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6826479A JPS55160458A (en) 1979-05-31 1979-05-31 Electrostatic induction type semiconductor logic circuit device

Publications (2)

Publication Number Publication Date
JPS55160458A JPS55160458A (en) 1980-12-13
JPS6225267B2 true JPS6225267B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=13368712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6826479A Granted JPS55160458A (en) 1979-05-31 1979-05-31 Electrostatic induction type semiconductor logic circuit device

Country Status (1)

Country Link
JP (1) JPS55160458A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122382A (en) * 1977-03-31 1978-10-25 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type

Also Published As

Publication number Publication date
JPS55160458A (en) 1980-12-13

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