JPS6165447A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6165447A
JPS6165447A JP59188402A JP18840284A JPS6165447A JP S6165447 A JPS6165447 A JP S6165447A JP 59188402 A JP59188402 A JP 59188402A JP 18840284 A JP18840284 A JP 18840284A JP S6165447 A JPS6165447 A JP S6165447A
Authority
JP
Japan
Prior art keywords
insulating film
epitaxial layer
active region
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59188402A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522387B2 (cg-RX-API-DMAC10.html
Inventor
Shiro Hine
日根　史郎
Masao Yamawaki
正雄 山脇
Naoki Yuya
直毅 油谷
Masafumi Ueno
雅史 上野
Satoshi Yamakawa
聡 山川
Masaaki Kimata
雅章 木股
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59188402A priority Critical patent/JPS6165447A/ja
Publication of JPS6165447A publication Critical patent/JPS6165447A/ja
Publication of JPH0522387B2 publication Critical patent/JPH0522387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • H10W10/01—

Landscapes

  • Element Separation (AREA)
JP59188402A 1984-09-07 1984-09-07 半導体装置の製造方法 Granted JPS6165447A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59188402A JPS6165447A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59188402A JPS6165447A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6165447A true JPS6165447A (ja) 1986-04-04
JPH0522387B2 JPH0522387B2 (cg-RX-API-DMAC10.html) 1993-03-29

Family

ID=16223013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59188402A Granted JPS6165447A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6165447A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137244A (ja) * 1988-11-17 1990-05-25 Nec Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179590A (ja) * 1975-01-06 1976-07-10 Hitachi Ltd Handotaisochinoseizohoho
JPS56158446A (en) * 1980-05-12 1981-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179590A (ja) * 1975-01-06 1976-07-10 Hitachi Ltd Handotaisochinoseizohoho
JPS56158446A (en) * 1980-05-12 1981-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137244A (ja) * 1988-11-17 1990-05-25 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0522387B2 (cg-RX-API-DMAC10.html) 1993-03-29

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