JPS6161700B2 - - Google Patents
Info
- Publication number
- JPS6161700B2 JPS6161700B2 JP5557281A JP5557281A JPS6161700B2 JP S6161700 B2 JPS6161700 B2 JP S6161700B2 JP 5557281 A JP5557281 A JP 5557281A JP 5557281 A JP5557281 A JP 5557281A JP S6161700 B2 JPS6161700 B2 JP S6161700B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- wirings
- channel
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 168
- 239000011295 pitch Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5557281A JPS5778154A (en) | 1981-04-15 | 1981-04-15 | Semiconductor device with multilayer channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5557281A JPS5778154A (en) | 1981-04-15 | 1981-04-15 | Semiconductor device with multilayer channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778154A JPS5778154A (en) | 1982-05-15 |
| JPS6161700B2 true JPS6161700B2 (enrdf_load_stackoverflow) | 1986-12-26 |
Family
ID=13002428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5557281A Granted JPS5778154A (en) | 1981-04-15 | 1981-04-15 | Semiconductor device with multilayer channel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778154A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58444U (ja) * | 1981-06-25 | 1983-01-05 | 富士通株式会社 | 半導体装置の多層配線構造 |
| JPS5891657A (ja) * | 1981-11-26 | 1983-05-31 | Mitsubishi Electric Corp | 半導体装置の多層配線構造 |
| JPS5979549A (ja) * | 1982-10-29 | 1984-05-08 | Toshiba Corp | 半導体集積回路 |
| JPS63141A (ja) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | 半導体記憶装置 |
-
1981
- 1981-04-15 JP JP5557281A patent/JPS5778154A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5778154A (en) | 1982-05-15 |
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