JPS6153867B2 - - Google Patents

Info

Publication number
JPS6153867B2
JPS6153867B2 JP56151986A JP15198681A JPS6153867B2 JP S6153867 B2 JPS6153867 B2 JP S6153867B2 JP 56151986 A JP56151986 A JP 56151986A JP 15198681 A JP15198681 A JP 15198681A JP S6153867 B2 JPS6153867 B2 JP S6153867B2
Authority
JP
Japan
Prior art keywords
emitter
film
region
polycrystalline silicon
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56151986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5870570A (ja
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56151986A priority Critical patent/JPS5870570A/ja
Priority to EP82305024A priority patent/EP0076106B1/en
Priority to DE8282305024T priority patent/DE3276978D1/de
Priority to US06/425,648 priority patent/US4408387A/en
Publication of JPS5870570A publication Critical patent/JPS5870570A/ja
Publication of JPS6153867B2 publication Critical patent/JPS6153867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56151986A 1981-09-28 1981-09-28 半導体装置の製造方法 Granted JPS5870570A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56151986A JPS5870570A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法
EP82305024A EP0076106B1 (en) 1981-09-28 1982-09-23 Method for producing a bipolar transistor
DE8282305024T DE3276978D1 (en) 1981-09-28 1982-09-23 Method for producing a bipolar transistor
US06/425,648 US4408387A (en) 1981-09-28 1982-09-28 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151986A JPS5870570A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5870570A JPS5870570A (ja) 1983-04-27
JPS6153867B2 true JPS6153867B2 (en:Method) 1986-11-19

Family

ID=15530556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151986A Granted JPS5870570A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4408387A (en:Method)
EP (1) EP0076106B1 (en:Method)
JP (1) JPS5870570A (en:Method)
DE (1) DE3276978D1 (en:Method)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置の製造方法
US4498227A (en) * 1983-07-05 1985-02-12 Fairchild Camera & Instrument Corporation Wafer fabrication by implanting through protective layer
JPS6045052A (ja) * 1983-08-22 1985-03-11 Mitsubishi Electric Corp 半導体集積回路装置
US4566176A (en) * 1984-05-23 1986-01-28 U.S. Philips Corporation Method of manufacturing transistors
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
US4721682A (en) * 1985-09-25 1988-01-26 Monolithic Memories, Inc. Isolation and substrate connection for a bipolar integrated circuit
NL8600769A (nl) * 1986-03-26 1987-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPS63107167A (ja) * 1986-10-24 1988-05-12 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US4855798A (en) * 1986-12-19 1989-08-08 Texas Instruments Incorporated Semiconductor and process of fabrication thereof
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
JP2871530B2 (ja) * 1995-05-10 1999-03-17 日本電気株式会社 半導体装置の製造方法
US5702959A (en) * 1995-05-31 1997-12-30 Texas Instruments Incorporated Method for making an isolated vertical transistor
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
KR100275962B1 (ko) 1998-12-30 2001-02-01 김영환 반도체장치 및 그의 제조방법_
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507716A (en) * 1966-09-02 1970-04-21 Hitachi Ltd Method of manufacturing semiconductor device
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
US3909925A (en) * 1974-05-06 1975-10-07 Telex Computer Products N-Channel charge coupled device fabrication process
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4060427A (en) * 1976-04-05 1977-11-29 Ibm Corporation Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
US4376664A (en) * 1979-05-31 1983-03-15 Fujitsu Limited Method of producing a semiconductor device
US4242791A (en) * 1979-09-21 1981-01-06 International Business Machines Corporation High performance bipolar transistors fabricated by post emitter base implantation process
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor

Also Published As

Publication number Publication date
JPS5870570A (ja) 1983-04-27
DE3276978D1 (en) 1987-09-17
EP0076106A3 (en) 1985-01-23
EP0076106A2 (en) 1983-04-06
US4408387A (en) 1983-10-11
EP0076106B1 (en) 1987-08-12

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