JPS6131630B2 - - Google Patents

Info

Publication number
JPS6131630B2
JPS6131630B2 JP52097611A JP9761177A JPS6131630B2 JP S6131630 B2 JPS6131630 B2 JP S6131630B2 JP 52097611 A JP52097611 A JP 52097611A JP 9761177 A JP9761177 A JP 9761177A JP S6131630 B2 JPS6131630 B2 JP S6131630B2
Authority
JP
Japan
Prior art keywords
type
region
insulating layer
buried insulating
electrode terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52097611A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5431289A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9761177A priority Critical patent/JPS5431289A/ja
Publication of JPS5431289A publication Critical patent/JPS5431289A/ja
Publication of JPS6131630B2 publication Critical patent/JPS6131630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9761177A 1977-08-15 1977-08-15 Semiconductor device Granted JPS5431289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9761177A JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9761177A JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5431289A JPS5431289A (en) 1979-03-08
JPS6131630B2 true JPS6131630B2 (enrdf_load_stackoverflow) 1986-07-21

Family

ID=14197003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9761177A Granted JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5431289A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831574A (ja) * 1981-08-19 1983-02-24 Toshiba Corp 半導体装置及びその製造方法
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
JP2557984B2 (ja) * 1989-07-28 1996-11-27 日産自動車株式会社 半導体装置の入力保護回路

Also Published As

Publication number Publication date
JPS5431289A (en) 1979-03-08

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