JPS5431289A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5431289A
JPS5431289A JP9761177A JP9761177A JPS5431289A JP S5431289 A JPS5431289 A JP S5431289A JP 9761177 A JP9761177 A JP 9761177A JP 9761177 A JP9761177 A JP 9761177A JP S5431289 A JPS5431289 A JP S5431289A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
insulator layer
buried insulator
junction capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9761177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6131630B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9761177A priority Critical patent/JPS5431289A/ja
Publication of JPS5431289A publication Critical patent/JPS5431289A/ja
Publication of JPS6131630B2 publication Critical patent/JPS6131630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9761177A 1977-08-15 1977-08-15 Semiconductor device Granted JPS5431289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9761177A JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9761177A JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5431289A true JPS5431289A (en) 1979-03-08
JPS6131630B2 JPS6131630B2 (enrdf_load_stackoverflow) 1986-07-21

Family

ID=14197003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9761177A Granted JPS5431289A (en) 1977-08-15 1977-08-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5431289A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831574A (ja) * 1981-08-19 1983-02-24 Toshiba Corp 半導体装置及びその製造方法
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
JPH0360152A (ja) * 1989-07-28 1991-03-15 Nissan Motor Co Ltd 半導体装置の入力保護回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831574A (ja) * 1981-08-19 1983-02-24 Toshiba Corp 半導体装置及びその製造方法
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
JPH0360152A (ja) * 1989-07-28 1991-03-15 Nissan Motor Co Ltd 半導体装置の入力保護回路

Also Published As

Publication number Publication date
JPS6131630B2 (enrdf_load_stackoverflow) 1986-07-21

Similar Documents

Publication Publication Date Title
AU511235B2 (en) Semiconductor device including an amorphous silicon layer
NL7901334A (nl) Halfgeleidersubstraat.
GB1542084A (en) Thin silicon semiconductor devices
JPS5431289A (en) Semiconductor device
IT1113687B (it) Dispositivo semiconduttore con strato policristallino munito di contatto elettrico
JPS5346288A (en) Mis type semiconductor device
JPS53108391A (en) Semiconductor device
JPS5389681A (en) Mis type semiconductor device
AT376518B (de) Funkentstoerdrossel fuer phasenanschnittgesteuerte halbleiterschalter
JPS52129380A (en) Semiconductor device
JPS548982A (en) Semiconductor device
JPS5373979A (en) Transistor device
JPS5353271A (en) Manufacture for semiconductor device
JPS52141566A (en) Semiconductor device and its manufacture
JPS52104072A (en) High voltage semiconductor device
JPS5295984A (en) Vertical junction type field effect transistor
JPS5439585A (en) Semiconductor memory device
JPS53139476A (en) Manufacture of semiconductor device
JPS543472A (en) Manufacture of semiconductor device
JPS52144988A (en) Semiconductor light emitting element
JPS5317283A (en) Production of semiconductor device
JPS5397771A (en) Semiconductor device
JPS51132966A (en) Semiconductor device
JPS5368180A (en) Semiconductor device
JPS5380178A (en) Semiconductor device