JPS6129551B2 - - Google Patents

Info

Publication number
JPS6129551B2
JPS6129551B2 JP55041961A JP4196180A JPS6129551B2 JP S6129551 B2 JPS6129551 B2 JP S6129551B2 JP 55041961 A JP55041961 A JP 55041961A JP 4196180 A JP4196180 A JP 4196180A JP S6129551 B2 JPS6129551 B2 JP S6129551B2
Authority
JP
Japan
Prior art keywords
effect transistor
field effect
region
forming
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55041961A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56140655A (en
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP4196180A priority Critical patent/JPS56140655A/ja
Publication of JPS56140655A publication Critical patent/JPS56140655A/ja
Publication of JPS6129551B2 publication Critical patent/JPS6129551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP4196180A 1980-04-02 1980-04-02 Manufacture of semiconductor device Granted JPS56140655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4196180A JPS56140655A (en) 1980-04-02 1980-04-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4196180A JPS56140655A (en) 1980-04-02 1980-04-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56140655A JPS56140655A (en) 1981-11-04
JPS6129551B2 true JPS6129551B2 (enrdf_load_stackoverflow) 1986-07-07

Family

ID=12622777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4196180A Granted JPS56140655A (en) 1980-04-02 1980-04-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56140655A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04216226A (ja) * 1990-12-17 1992-08-06 Tokyo Electric Co Ltd 受信信号検出装置
JPH0548492A (ja) * 1991-08-09 1993-02-26 Uchu Tsushin Kiso Gijutsu Kenkyusho:Kk 送受信装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6342161A (ja) * 1986-08-07 1988-02-23 Toshiba Corp Ｃｍｏｓ型半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04216226A (ja) * 1990-12-17 1992-08-06 Tokyo Electric Co Ltd 受信信号検出装置
JPH0548492A (ja) * 1991-08-09 1993-02-26 Uchu Tsushin Kiso Gijutsu Kenkyusho:Kk 送受信装置

Also Published As

Publication number Publication date
JPS56140655A (en) 1981-11-04

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