JPH0113230B2 - - Google Patents

Info

Publication number
JPH0113230B2
JPH0113230B2 JP55160230A JP16023080A JPH0113230B2 JP H0113230 B2 JPH0113230 B2 JP H0113230B2 JP 55160230 A JP55160230 A JP 55160230A JP 16023080 A JP16023080 A JP 16023080A JP H0113230 B2 JPH0113230 B2 JP H0113230B2
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
forming
gate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55160230A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5784164A (en
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55160230A priority Critical patent/JPS5784164A/ja
Publication of JPS5784164A publication Critical patent/JPS5784164A/ja
Publication of JPH0113230B2 publication Critical patent/JPH0113230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP55160230A 1980-11-14 1980-11-14 Manufacture of semiconductor device Granted JPS5784164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160230A JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160230A JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5784164A JPS5784164A (en) 1982-05-26
JPH0113230B2 true JPH0113230B2 (enrdf_load_stackoverflow) 1989-03-03

Family

ID=15710511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160230A Granted JPS5784164A (en) 1980-11-14 1980-11-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784164A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974677A (ja) * 1982-10-22 1984-04-27 Ricoh Co Ltd 半導体装置及びその製造方法
JPS60213051A (ja) * 1984-04-09 1985-10-25 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60226182A (ja) * 1984-04-25 1985-11-11 Nec Corp 電界効果半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645235B2 (ja) * 1984-07-20 1994-06-15 キヤノン株式会社 液体噴射ヘッドおよび該ヘッドの製造方法

Also Published As

Publication number Publication date
JPS5784164A (en) 1982-05-26

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