JPS61270870A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61270870A
JPS61270870A JP60112606A JP11260685A JPS61270870A JP S61270870 A JPS61270870 A JP S61270870A JP 60112606 A JP60112606 A JP 60112606A JP 11260685 A JP11260685 A JP 11260685A JP S61270870 A JPS61270870 A JP S61270870A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
gate electrode
impurity diffusion
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60112606A
Other languages
English (en)
Japanese (ja)
Inventor
Tatsuro Okamoto
岡本　龍郎
Masahiro Shimizu
雅裕 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60112606A priority Critical patent/JPS61270870A/ja
Priority to KR1019850008215A priority patent/KR890004464B1/ko
Priority to DE19863614793 priority patent/DE3614793A1/de
Publication of JPS61270870A publication Critical patent/JPS61270870A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60112606A 1985-05-25 1985-05-25 半導体装置 Pending JPS61270870A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60112606A JPS61270870A (ja) 1985-05-25 1985-05-25 半導体装置
KR1019850008215A KR890004464B1 (ko) 1985-05-25 1985-11-04 반도체 장치
DE19863614793 DE3614793A1 (de) 1985-05-25 1986-05-02 Halbleiterbauelement und dessen herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60112606A JPS61270870A (ja) 1985-05-25 1985-05-25 半導体装置

Publications (1)

Publication Number Publication Date
JPS61270870A true JPS61270870A (ja) 1986-12-01

Family

ID=14590935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60112606A Pending JPS61270870A (ja) 1985-05-25 1985-05-25 半導体装置

Country Status (3)

Country Link
JP (1) JPS61270870A (https=)
KR (1) KR890004464B1 (https=)
DE (1) DE3614793A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594963A (ja) * 1990-08-16 1993-04-16 Internatl Business Mach Corp <Ibm> 集積回路の種々の厚さの耐火性金属シリサイド層を形成する方法
US5341028A (en) * 1990-10-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63221647A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体装置の製造方法
US5229325A (en) * 1991-01-31 1993-07-20 Samsung Electronics Co., Ltd. Method for forming metal wirings of semiconductor device
KR930006128B1 (ko) * 1991-01-31 1993-07-07 삼성전자 주식회사 반도체장치의 금속 배선 형성방법
KR102064865B1 (ko) * 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228212A (en) * 1979-06-11 1980-10-14 General Electric Company Composite conductive structures in integrated circuits
US4521952A (en) * 1982-12-02 1985-06-11 International Business Machines Corporation Method of making integrated circuits using metal silicide contacts
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594963A (ja) * 1990-08-16 1993-04-16 Internatl Business Mach Corp <Ibm> 集積回路の種々の厚さの耐火性金属シリサイド層を形成する方法
US5341028A (en) * 1990-10-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
US5444282A (en) * 1990-10-09 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof

Also Published As

Publication number Publication date
KR890004464B1 (ko) 1989-11-04
DE3614793A1 (de) 1986-11-27
DE3614793C2 (https=) 1989-01-26
KR860009497A (ko) 1986-12-23

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