DE3614793A1 - Halbleiterbauelement und dessen herstellung - Google Patents

Halbleiterbauelement und dessen herstellung

Info

Publication number
DE3614793A1
DE3614793A1 DE19863614793 DE3614793A DE3614793A1 DE 3614793 A1 DE3614793 A1 DE 3614793A1 DE 19863614793 DE19863614793 DE 19863614793 DE 3614793 A DE3614793 A DE 3614793A DE 3614793 A1 DE3614793 A1 DE 3614793A1
Authority
DE
Germany
Prior art keywords
layers
layer
semiconductor device
metal
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863614793
Other languages
German (de)
English (en)
Other versions
DE3614793C2 (https=
Inventor
Tatsuo Okamoto
Masahiro Itami Hyogo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3614793A1 publication Critical patent/DE3614793A1/de
Application granted granted Critical
Publication of DE3614793C2 publication Critical patent/DE3614793C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19863614793 1985-05-25 1986-05-02 Halbleiterbauelement und dessen herstellung Granted DE3614793A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60112606A JPS61270870A (ja) 1985-05-25 1985-05-25 半導体装置

Publications (2)

Publication Number Publication Date
DE3614793A1 true DE3614793A1 (de) 1986-11-27
DE3614793C2 DE3614793C2 (https=) 1989-01-26

Family

ID=14590935

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863614793 Granted DE3614793A1 (de) 1985-05-25 1986-05-02 Halbleiterbauelement und dessen herstellung

Country Status (3)

Country Link
JP (1) JPS61270870A (https=)
KR (1) KR890004464B1 (https=)
DE (1) DE3614793A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3807788A1 (de) * 1987-03-10 1988-09-22 Mitsubishi Electric Corp Verfahren zum herstellen einer halbleitereinrichtung
DE4118380A1 (de) * 1991-01-31 1992-08-13 Samsung Electronics Co Ltd Verfahren zur bildung von metalleitungen an halbleiterbauelementen
US5229325A (en) * 1991-01-31 1993-07-20 Samsung Electronics Co., Ltd. Method for forming metal wirings of semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034348A (en) * 1990-08-16 1991-07-23 International Business Machines Corp. Process for forming refractory metal silicide layers of different thicknesses in an integrated circuit
JP2940880B2 (ja) * 1990-10-09 1999-08-25 三菱電機株式会社 半導体装置およびその製造方法
KR102064865B1 (ko) * 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228212A (en) * 1979-06-11 1980-10-14 General Electric Company Composite conductive structures in integrated circuits
EP0110211A2 (en) * 1982-12-02 1984-06-13 International Business Machines Corporation Bipolar transistor integrated circuit and method for manufacturing
EP0157052A1 (en) * 1984-03-16 1985-10-09 Genus, Inc. Low resistivity tungsten silicon composite film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228212A (en) * 1979-06-11 1980-10-14 General Electric Company Composite conductive structures in integrated circuits
EP0110211A2 (en) * 1982-12-02 1984-06-13 International Business Machines Corporation Bipolar transistor integrated circuit and method for manufacturing
EP0157052A1 (en) * 1984-03-16 1985-10-09 Genus, Inc. Low resistivity tungsten silicon composite film

Non-Patent Citations (13)

* Cited by examiner, † Cited by third party
Title
1984, S. 209 - 211 *
US-Z: Appl. Phys. Lett.43, 8.Okt.1984, S.905-907
US-Z: Appl.Phys.Lett.,Bd.36,1980,S.456-458 *
US-Z: IBM Techn.Disc.Bull.,Vol.25,Nr.12, Mai 1983,S.6398-6399 *
US-Z: Solid State Technology,Jan.1981, S.65 - 72, 92 *
US-Z:Appl.Phys.Lett.42,1983,S.361-363 *
US-Z:IBM Techn.Dicsl.Bull., Bd.24, 1982,S.6272 *
US-Z:IEEE Electron Device Letters,Bd.EDL-5, 1984, S.166 - 168 *
US-Z:IEEE Transactions on Electron Devices, Vol. ED-32,Nr.2,Febr.1985,S.141 - 149 *
US-Z:Solid State Technology, März 1983, S.125 - 128 *
Vol.25, Nr.4, Sept.1982, S.1920-1921
Vol.25,Nr.3A,Aug.1982,S.1177-1178 *
Vol.25,Nr.4, Sept.1982,S.1920-1921, US-Z:Appl.Phys.Lett.43,8,Okt.1984,S.905-907 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3807788A1 (de) * 1987-03-10 1988-09-22 Mitsubishi Electric Corp Verfahren zum herstellen einer halbleitereinrichtung
DE4118380A1 (de) * 1991-01-31 1992-08-13 Samsung Electronics Co Ltd Verfahren zur bildung von metalleitungen an halbleiterbauelementen
US5229325A (en) * 1991-01-31 1993-07-20 Samsung Electronics Co., Ltd. Method for forming metal wirings of semiconductor device

Also Published As

Publication number Publication date
KR890004464B1 (ko) 1989-11-04
DE3614793C2 (https=) 1989-01-26
JPS61270870A (ja) 1986-12-01
KR860009497A (ko) 1986-12-23

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN