JPS6126223B2 - - Google Patents
Info
- Publication number
- JPS6126223B2 JPS6126223B2 JP9079378A JP9079378A JPS6126223B2 JP S6126223 B2 JPS6126223 B2 JP S6126223B2 JP 9079378 A JP9079378 A JP 9079378A JP 9079378 A JP9079378 A JP 9079378A JP S6126223 B2 JPS6126223 B2 JP S6126223B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- film
- forming
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079378A JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079378A JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5518042A JPS5518042A (en) | 1980-02-07 |
| JPS6126223B2 true JPS6126223B2 (enrdf_load_stackoverflow) | 1986-06-19 |
Family
ID=14008454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9079378A Granted JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518042A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6153196A (ja) * | 1984-08-24 | 1986-03-17 | Fujitsu Ltd | シリコンのエピタキシヤル成長法 |
| JPS63178542A (ja) * | 1987-01-19 | 1988-07-22 | Rohm Co Ltd | 半導体デバイスの誘電体分離方法 |
-
1978
- 1978-07-24 JP JP9079378A patent/JPS5518042A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5518042A (en) | 1980-02-07 |
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