JPH0212012B2 - - Google Patents

Info

Publication number
JPH0212012B2
JPH0212012B2 JP54008201A JP820179A JPH0212012B2 JP H0212012 B2 JPH0212012 B2 JP H0212012B2 JP 54008201 A JP54008201 A JP 54008201A JP 820179 A JP820179 A JP 820179A JP H0212012 B2 JPH0212012 B2 JP H0212012B2
Authority
JP
Japan
Prior art keywords
polysilicon layer
region
conductivity type
semiconductor substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54008201A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55102269A (en
Inventor
Toshihiro Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP820179A priority Critical patent/JPS55102269A/ja
Publication of JPS55102269A publication Critical patent/JPS55102269A/ja
Publication of JPH0212012B2 publication Critical patent/JPH0212012B2/ja
Granted legal-status Critical Current

Links

JP820179A 1979-01-29 1979-01-29 Method of fabricating semiconductor device Granted JPS55102269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP820179A JPS55102269A (en) 1979-01-29 1979-01-29 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP820179A JPS55102269A (en) 1979-01-29 1979-01-29 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS55102269A JPS55102269A (en) 1980-08-05
JPH0212012B2 true JPH0212012B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=11686641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP820179A Granted JPS55102269A (en) 1979-01-29 1979-01-29 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS55102269A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123474A (ja) * 1987-11-09 1989-05-16 Nec Corp 絶縁ゲート型半導体装置
JPH01128569A (ja) * 1987-11-13 1989-05-22 Nec Corp 電界効果トランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508484A (enrdf_load_stackoverflow) * 1973-05-21 1975-01-28
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit

Also Published As

Publication number Publication date
JPS55102269A (en) 1980-08-05

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