JPH0429233B2 - - Google Patents

Info

Publication number
JPH0429233B2
JPH0429233B2 JP54091420A JP9142079A JPH0429233B2 JP H0429233 B2 JPH0429233 B2 JP H0429233B2 JP 54091420 A JP54091420 A JP 54091420A JP 9142079 A JP9142079 A JP 9142079A JP H0429233 B2 JPH0429233 B2 JP H0429233B2
Authority
JP
Japan
Prior art keywords
recess
source
drain regions
channel
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54091420A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5615080A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9142079A priority Critical patent/JPS5615080A/ja
Publication of JPS5615080A publication Critical patent/JPS5615080A/ja
Publication of JPH0429233B2 publication Critical patent/JPH0429233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9142079A 1979-07-18 1979-07-18 Mos type field effect transistor Granted JPS5615080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9142079A JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9142079A JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5615080A JPS5615080A (en) 1981-02-13
JPH0429233B2 true JPH0429233B2 (enrdf_load_stackoverflow) 1992-05-18

Family

ID=14025869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9142079A Granted JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5615080A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636567B2 (enrdf_load_stackoverflow) * 1973-10-17 1981-08-25
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5391381A (en) * 1977-01-22 1978-08-11 Hitachi Ltd Method of producing printed circuit board

Also Published As

Publication number Publication date
JPS5615080A (en) 1981-02-13

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