JPS5615080A - Mos type field effect transistor - Google Patents

Mos type field effect transistor

Info

Publication number
JPS5615080A
JPS5615080A JP9142079A JP9142079A JPS5615080A JP S5615080 A JPS5615080 A JP S5615080A JP 9142079 A JP9142079 A JP 9142079A JP 9142079 A JP9142079 A JP 9142079A JP S5615080 A JPS5615080 A JP S5615080A
Authority
JP
Japan
Prior art keywords
oxide film
field effect
effect transistor
gate electrode
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9142079A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0429233B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9142079A priority Critical patent/JPS5615080A/ja
Publication of JPS5615080A publication Critical patent/JPS5615080A/ja
Publication of JPH0429233B2 publication Critical patent/JPH0429233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9142079A 1979-07-18 1979-07-18 Mos type field effect transistor Granted JPS5615080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9142079A JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9142079A JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5615080A true JPS5615080A (en) 1981-02-13
JPH0429233B2 JPH0429233B2 (enrdf_load_stackoverflow) 1992-05-18

Family

ID=14025869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9142079A Granted JPS5615080A (en) 1979-07-18 1979-07-18 Mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5615080A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068065A (enrdf_load_stackoverflow) * 1973-10-17 1975-06-07
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5391381A (en) * 1977-01-22 1978-08-11 Hitachi Ltd Method of producing printed circuit board

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068065A (enrdf_load_stackoverflow) * 1973-10-17 1975-06-07
JPS5227280A (en) * 1975-08-25 1977-03-01 Sony Corp Method to form pinholes
JPS5391381A (en) * 1977-01-22 1978-08-11 Hitachi Ltd Method of producing printed circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置

Also Published As

Publication number Publication date
JPH0429233B2 (enrdf_load_stackoverflow) 1992-05-18

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