JPS6326553B2 - - Google Patents

Info

Publication number
JPS6326553B2
JPS6326553B2 JP54162630A JP16263079A JPS6326553B2 JP S6326553 B2 JPS6326553 B2 JP S6326553B2 JP 54162630 A JP54162630 A JP 54162630A JP 16263079 A JP16263079 A JP 16263079A JP S6326553 B2 JPS6326553 B2 JP S6326553B2
Authority
JP
Japan
Prior art keywords
layer
insulating layer
semiconductor
mask
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54162630A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5583270A (en
Inventor
Maachin Fueisuto Uorufugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS5583270A publication Critical patent/JPS5583270A/ja
Publication of JPS6326553B2 publication Critical patent/JPS6326553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP16263079A 1978-12-15 1979-12-14 Method of fabricating semiconductor device Granted JPS5583270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96990678A 1978-12-15 1978-12-15

Publications (2)

Publication Number Publication Date
JPS5583270A JPS5583270A (en) 1980-06-23
JPS6326553B2 true JPS6326553B2 (enrdf_load_stackoverflow) 1988-05-30

Family

ID=25516148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16263079A Granted JPS5583270A (en) 1978-12-15 1979-12-14 Method of fabricating semiconductor device

Country Status (6)

Country Link
JP (1) JPS5583270A (enrdf_load_stackoverflow)
CA (1) CA1138571A (enrdf_load_stackoverflow)
DE (1) DE2950413A1 (enrdf_load_stackoverflow)
FR (2) FR2445618A1 (enrdf_load_stackoverflow)
GB (1) GB2038088B (enrdf_load_stackoverflow)
IT (1) IT1120149B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040775C2 (de) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Steuerbares MIS-Halbleiterbauelement
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
DE3322669C2 (de) * 1982-07-08 1986-04-24 General Electric Co., Schenectady, N.Y. Verfahren zum Herstellen einer Halbleitervorrichtung mit isolierten Gateelektroden
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
US5604139A (en) * 1994-02-10 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2007085210A (ja) * 2005-09-21 2007-04-05 Hitachi Ltd 水車又はポンプ水車

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636585B2 (enrdf_load_stackoverflow) * 1973-07-02 1981-08-25
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4058822A (en) * 1975-05-30 1977-11-15 Sharp Kabushiki Kaisha High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
JPS605075B2 (ja) * 1976-12-29 1985-02-08 松下電器産業株式会社 Ｍｏｓ型半導体装置およびその製造方法
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
JPS53135581A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Manufacture for mos semiconductor device
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels

Also Published As

Publication number Publication date
FR2445618B1 (enrdf_load_stackoverflow) 1985-03-01
GB2038088B (en) 1983-05-25
CA1138571A (en) 1982-12-28
FR2453501B1 (enrdf_load_stackoverflow) 1984-09-07
DE2950413C2 (enrdf_load_stackoverflow) 1989-12-28
FR2445618A1 (fr) 1980-07-25
GB2038088A (en) 1980-07-16
IT1120149B (it) 1986-03-19
DE2950413A1 (de) 1980-06-26
FR2453501A1 (fr) 1980-10-31
JPS5583270A (en) 1980-06-23
IT7951008A0 (it) 1979-12-06

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