JPH0586074B2 - - Google Patents

Info

Publication number
JPH0586074B2
JPH0586074B2 JP62073253A JP7325387A JPH0586074B2 JP H0586074 B2 JPH0586074 B2 JP H0586074B2 JP 62073253 A JP62073253 A JP 62073253A JP 7325387 A JP7325387 A JP 7325387A JP H0586074 B2 JPH0586074 B2 JP H0586074B2
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
film
gate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62073253A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63237577A (ja
Inventor
Takemitsu Kunio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62073253A priority Critical patent/JPS63237577A/ja
Publication of JPS63237577A publication Critical patent/JPS63237577A/ja
Publication of JPH0586074B2 publication Critical patent/JPH0586074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
JP62073253A 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法 Granted JPS63237577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62073253A JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62073253A JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Publications (2)

Publication Number Publication Date
JPS63237577A JPS63237577A (ja) 1988-10-04
JPH0586074B2 true JPH0586074B2 (enrdf_load_stackoverflow) 1993-12-09

Family

ID=13512825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62073253A Granted JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Country Status (1)

Country Link
JP (1) JPS63237577A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2796175B2 (ja) * 1990-06-05 1998-09-10 松下電器産業株式会社 薄膜トランジスターの製造方法
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
US6331717B1 (en) * 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JP5371144B2 (ja) * 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器

Also Published As

Publication number Publication date
JPS63237577A (ja) 1988-10-04

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Legal Events

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