JPS63237577A - Ｍｉｓｆｅｔ製造方法 - Google Patents

Ｍｉｓｆｅｔ製造方法

Info

Publication number
JPS63237577A
JPS63237577A JP62073253A JP7325387A JPS63237577A JP S63237577 A JPS63237577 A JP S63237577A JP 62073253 A JP62073253 A JP 62073253A JP 7325387 A JP7325387 A JP 7325387A JP S63237577 A JPS63237577 A JP S63237577A
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
film
gate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62073253A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586074B2 (enrdf_load_stackoverflow
Inventor
Takemitsu Kunio
國尾　武光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62073253A priority Critical patent/JPS63237577A/ja
Publication of JPS63237577A publication Critical patent/JPS63237577A/ja
Publication of JPH0586074B2 publication Critical patent/JPH0586074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
JP62073253A 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法 Granted JPS63237577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62073253A JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62073253A JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Publications (2)

Publication Number Publication Date
JPS63237577A true JPS63237577A (ja) 1988-10-04
JPH0586074B2 JPH0586074B2 (enrdf_load_stackoverflow) 1993-12-09

Family

ID=13512825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62073253A Granted JPS63237577A (ja) 1987-03-26 1987-03-26 Ｍｉｓｆｅｔ製造方法

Country Status (1)

Country Link
JP (1) JPS63237577A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439967A (ja) * 1990-06-05 1992-02-10 Matsushita Electric Ind Co Ltd 薄膜トランジスターの製造方法
JPH05275452A (ja) * 1992-03-25 1993-10-22 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
JPH0799317A (ja) * 1993-08-12 1995-04-11 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US6124155A (en) * 1991-06-19 2000-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6331717B1 (en) * 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2009033134A (ja) * 2007-06-29 2009-02-12 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法、並びに電子機器

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439967A (ja) * 1990-06-05 1992-02-10 Matsushita Electric Ind Co Ltd 薄膜トランジスターの製造方法
US6797548B2 (en) 1991-06-19 2004-09-28 Semiconductor Energy Laboratory Co., Inc. Electro-optical device and thin film transistor and method for forming the same
US6847064B2 (en) 1991-06-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor
US6124155A (en) * 1991-06-19 2000-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6166399A (en) * 1991-06-19 2000-12-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix device including thin film transistors
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6756258B2 (en) 1991-06-19 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6335213B1 (en) 1991-06-19 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
JPH05275452A (ja) * 1992-03-25 1993-10-22 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
JPH0799317A (ja) * 1993-08-12 1995-04-11 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6331717B1 (en) * 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2009033134A (ja) * 2007-06-29 2009-02-12 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法、並びに電子機器

Also Published As

Publication number Publication date
JPH0586074B2 (enrdf_load_stackoverflow) 1993-12-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees