JPS5518042A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5518042A JPS5518042A JP9079378A JP9079378A JPS5518042A JP S5518042 A JPS5518042 A JP S5518042A JP 9079378 A JP9079378 A JP 9079378A JP 9079378 A JP9079378 A JP 9079378A JP S5518042 A JPS5518042 A JP S5518042A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- oxide film
- region
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- 238000002955 isolation Methods 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079378A JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079378A JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5518042A true JPS5518042A (en) | 1980-02-07 |
| JPS6126223B2 JPS6126223B2 (enrdf_load_stackoverflow) | 1986-06-19 |
Family
ID=14008454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9079378A Granted JPS5518042A (en) | 1978-07-24 | 1978-07-24 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518042A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6153196A (ja) * | 1984-08-24 | 1986-03-17 | Fujitsu Ltd | シリコンのエピタキシヤル成長法 |
| JPS63178542A (ja) * | 1987-01-19 | 1988-07-22 | Rohm Co Ltd | 半導体デバイスの誘電体分離方法 |
-
1978
- 1978-07-24 JP JP9079378A patent/JPS5518042A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6153196A (ja) * | 1984-08-24 | 1986-03-17 | Fujitsu Ltd | シリコンのエピタキシヤル成長法 |
| JPS63178542A (ja) * | 1987-01-19 | 1988-07-22 | Rohm Co Ltd | 半導体デバイスの誘電体分離方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6126223B2 (enrdf_load_stackoverflow) | 1986-06-19 |
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