JPS61170068A - Mosトランジスタ - Google Patents
MosトランジスタInfo
- Publication number
- JPS61170068A JPS61170068A JP60010131A JP1013185A JPS61170068A JP S61170068 A JPS61170068 A JP S61170068A JP 60010131 A JP60010131 A JP 60010131A JP 1013185 A JP1013185 A JP 1013185A JP S61170068 A JPS61170068 A JP S61170068A
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- type
- semiconductor substrate
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/378—Contact regions to the substrate regions
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60010131A JPS61170068A (ja) | 1985-01-23 | 1985-01-23 | Mosトランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60010131A JPS61170068A (ja) | 1985-01-23 | 1985-01-23 | Mosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61170068A true JPS61170068A (ja) | 1986-07-31 |
JPH0527996B2 JPH0527996B2 (enrdf_load_stackoverflow) | 1993-04-22 |
Family
ID=11741730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60010131A Granted JPS61170068A (ja) | 1985-01-23 | 1985-01-23 | Mosトランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61170068A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235275A (en) * | 1990-02-22 | 1993-08-10 | Nkk Corporation | Magnetic inspection apparatus for thin steel strip having magnetizer and detection coil within a hollow roller rotated by the steel strip |
US5512821A (en) * | 1991-06-04 | 1996-04-30 | Nkk Corporation | Method and apparatus for magnetically detecting defects in an object with compensation for magnetic field shift by means of a compensating coil |
-
1985
- 1985-01-23 JP JP60010131A patent/JPS61170068A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235275A (en) * | 1990-02-22 | 1993-08-10 | Nkk Corporation | Magnetic inspection apparatus for thin steel strip having magnetizer and detection coil within a hollow roller rotated by the steel strip |
US5512821A (en) * | 1991-06-04 | 1996-04-30 | Nkk Corporation | Method and apparatus for magnetically detecting defects in an object with compensation for magnetic field shift by means of a compensating coil |
Also Published As
Publication number | Publication date |
---|---|
JPH0527996B2 (enrdf_load_stackoverflow) | 1993-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS63151083A (ja) | 薄膜半導体装置 | |
JPH01194439A (ja) | 半導体装置の製造方法 | |
JP2690242B2 (ja) | 半導体固定記憶装置 | |
JPS61170068A (ja) | Mosトランジスタ | |
JPH02209735A (ja) | 半導体装置 | |
JPS618969A (ja) | 半導体集積回路装置 | |
JPS58116763A (ja) | Mos型rom | |
JP2598446B2 (ja) | Mis−fet | |
JPH02168673A (ja) | Misトランジスタ | |
JPS63177566A (ja) | 電界効果トランジスタ | |
JPH061816B2 (ja) | 半導体装置の製造方法 | |
JPH04241463A (ja) | 半導体装置 | |
JPH0364931A (ja) | Mos型半導体装置 | |
JP2642000B2 (ja) | Mos集積回路装置 | |
JPS6066444A (ja) | 半導体装置 | |
JPS592363A (ja) | 相補型絶縁ゲート電界効果型装置 | |
JPH03255673A (ja) | 半導体集積回路 | |
JPH04370978A (ja) | 量子効果型電界効果トランジスタ | |
JPS6161438A (ja) | 半導体集積回路装置 | |
JPH062275Y2 (ja) | 半導体装置 | |
JPH04186674A (ja) | 半導体装置 | |
JPS61279176A (ja) | Mos電界効果トランジスタ | |
JPS5867062A (ja) | 半導体装置 | |
JPS63152168A (ja) | 半導体装置 | |
JPS5877065U (ja) | 集積回路装置 |