JPS61125150A - ３次元半導体装置の製造方法 - Google Patents

３次元半導体装置の製造方法

Info

Publication number
JPS61125150A
JPS61125150A JP59246310A JP24631084A JPS61125150A JP S61125150 A JPS61125150 A JP S61125150A JP 59246310 A JP59246310 A JP 59246310A JP 24631084 A JP24631084 A JP 24631084A JP S61125150 A JPS61125150 A JP S61125150A
Authority
JP
Japan
Prior art keywords
insulating film
layer
forming
film
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59246310A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023301B2 (cg-RX-API-DMAC10.html
Inventor
Kikuo Yamabe
紀久夫 山部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59246310A priority Critical patent/JPS61125150A/ja
Publication of JPS61125150A publication Critical patent/JPS61125150A/ja
Publication of JPH023301B2 publication Critical patent/JPH023301B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59246310A 1984-11-22 1984-11-22 ３次元半導体装置の製造方法 Granted JPS61125150A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59246310A JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59246310A JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61125150A true JPS61125150A (ja) 1986-06-12
JPH023301B2 JPH023301B2 (cg-RX-API-DMAC10.html) 1990-01-23

Family

ID=17146648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59246310A Granted JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61125150A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613575A (ja) * 1990-07-31 1994-01-21 Internatl Business Mach Corp <Ibm> スタック形半導体構造体及びその形成方法
US5489554A (en) * 1992-07-21 1996-02-06 Hughes Aircraft Company Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer
US7375401B2 (en) 1996-02-23 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Static random access memory using thin film transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613575A (ja) * 1990-07-31 1994-01-21 Internatl Business Mach Corp <Ibm> スタック形半導体構造体及びその形成方法
US5489554A (en) * 1992-07-21 1996-02-06 Hughes Aircraft Company Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer
US7375401B2 (en) 1996-02-23 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Static random access memory using thin film transistors

Also Published As

Publication number Publication date
JPH023301B2 (cg-RX-API-DMAC10.html) 1990-01-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term