JPS61102752A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS61102752A
JPS61102752A JP22408184A JP22408184A JPS61102752A JP S61102752 A JPS61102752 A JP S61102752A JP 22408184 A JP22408184 A JP 22408184A JP 22408184 A JP22408184 A JP 22408184A JP S61102752 A JPS61102752 A JP S61102752A
Authority
JP
Japan
Prior art keywords
insulating film
deposited
film
base insulating
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22408184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337297B2 (fr
Inventor
Toshiyo Itou
伊藤　敏代
Jiro Oshima
次郎 大島
Masayasu Abe
正泰 安部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22408184A priority Critical patent/JPS61102752A/ja
Publication of JPS61102752A publication Critical patent/JPS61102752A/ja
Publication of JPH0337297B2 publication Critical patent/JPH0337297B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP22408184A 1984-10-26 1984-10-26 半導体装置及びその製造方法 Granted JPS61102752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22408184A JPS61102752A (ja) 1984-10-26 1984-10-26 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22408184A JPS61102752A (ja) 1984-10-26 1984-10-26 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61102752A true JPS61102752A (ja) 1986-05-21
JPH0337297B2 JPH0337297B2 (fr) 1991-06-05

Family

ID=16808258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22408184A Granted JPS61102752A (ja) 1984-10-26 1984-10-26 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61102752A (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737853A (en) * 1980-08-18 1982-03-02 Toshiba Corp Forming method for multilayer thin-film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737853A (en) * 1980-08-18 1982-03-02 Toshiba Corp Forming method for multilayer thin-film

Also Published As

Publication number Publication date
JPH0337297B2 (fr) 1991-06-05

Similar Documents

Publication Publication Date Title
JPS61501738A (ja) 集積回路構造の多層メタライゼ−ションのためのダブル平面化方法
JPH06302599A (ja) 半導体装置およびその製造方法
JP2960538B2 (ja) 半導体装置の製造方法
JPS61102752A (ja) 半導体装置及びその製造方法
JPS6281075A (ja) ジヨセフソン集積回路の製造方法
JP2000195867A (ja) 象嵌技法を利用した微細金属パタ―ン形成方法
JPH0918117A (ja) 導電体層形成方法
JPS5895839A (ja) 半導体装置の製造方法
JPS62155537A (ja) 半導体装置の製造方法
JPS63161645A (ja) 半導体装置の製造方法
JP2839007B2 (ja) 半導体装置及びその製造方法
JPH03153035A (ja) 半導体装置の製造方法
JPH0212827A (ja) 半導体装置の製造方法
JPH05160126A (ja) 多層配線形成法
JPS63111644A (ja) 半導体装置の製造方法
JPH04102321A (ja) 半導体装置の製造方法
JPH04298039A (ja) 半導体装置およびその製造方法
JPS62216341A (ja) 半導体装置の製造方法
JPS59105337A (ja) 多層配線の形成方法
JPH07297283A (ja) 半導体集積回路装置およびその製造方法
JPS63308346A (ja) 半導体装置
JPH06338500A (ja) 半導体装置の製造方法
JPH07297184A (ja) 層間絶縁膜の平坦化方法
JPS60233840A (ja) 段差の被覆方法
JPH0273651A (ja) 半導体装置