JPS5737853A - Forming method for multilayer thin-film - Google Patents
Forming method for multilayer thin-filmInfo
- Publication number
- JPS5737853A JPS5737853A JP11313480A JP11313480A JPS5737853A JP S5737853 A JPS5737853 A JP S5737853A JP 11313480 A JP11313480 A JP 11313480A JP 11313480 A JP11313480 A JP 11313480A JP S5737853 A JPS5737853 A JP S5737853A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- thin
- shaped
- edge section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form the multilayer film with ease, the surface thereof is smooth, and to improve the reliability of a semiconductor element by covering the a stage difference of the first thin-film shaped on a base body with an edge section with surface of curvature and stacking a thin-film. CONSTITUTION:The Al film 11 with approximately 1mu thickness is shaped on a main surface of SiO2 10 and patterned, and SiO2 12 is laminated by approximately 1mu at 380 deg.C in a gas of SiH4 and O2. The surface is etched by plasma by CF4 and H2. The surface of curvature is shaped to the edge section 13 of the Al film 11 through reactive ionic etching having the directional property. When SiO2 14 is further stacked, the edge section 13 is smoothed, and the multilayer thin-film, the surface thereof is smooth, is completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11313480A JPS5737853A (en) | 1980-08-18 | 1980-08-18 | Forming method for multilayer thin-film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11313480A JPS5737853A (en) | 1980-08-18 | 1980-08-18 | Forming method for multilayer thin-film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5737853A true JPS5737853A (en) | 1982-03-02 |
Family
ID=14604403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11313480A Pending JPS5737853A (en) | 1980-08-18 | 1980-08-18 | Forming method for multilayer thin-film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5737853A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58216445A (en) * | 1982-06-10 | 1983-12-16 | Nec Corp | Semiconductor device and manufacture thereof |
JPS59117237A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS59161050A (en) * | 1983-03-03 | 1984-09-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS6057953A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS618953A (en) * | 1984-06-25 | 1986-01-16 | Nec Corp | Manufacture of semiconductor device |
JPS6119176A (en) * | 1984-07-06 | 1986-01-28 | Toshiba Corp | Manufacture of semiconductor device |
JPS61102752A (en) * | 1984-10-26 | 1986-05-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS61222236A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1980
- 1980-08-18 JP JP11313480A patent/JPS5737853A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58216445A (en) * | 1982-06-10 | 1983-12-16 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6343892B2 (en) * | 1982-06-10 | 1988-09-01 | Nippon Electric Co | |
JPS59117237A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS59161050A (en) * | 1983-03-03 | 1984-09-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS6057953A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Manufacture of semiconductor device |
JPH0530066B2 (en) * | 1983-09-09 | 1993-05-07 | Tokyo Shibaura Electric Co | |
JPS618953A (en) * | 1984-06-25 | 1986-01-16 | Nec Corp | Manufacture of semiconductor device |
JPS6119176A (en) * | 1984-07-06 | 1986-01-28 | Toshiba Corp | Manufacture of semiconductor device |
JPS61102752A (en) * | 1984-10-26 | 1986-05-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH0337297B2 (en) * | 1984-10-26 | 1991-06-05 | Tokyo Shibaura Electric Co | |
JPS61222236A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Semiconductor device and manufacture thereof |
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