JPS5737853A - Forming method for multilayer thin-film - Google Patents

Forming method for multilayer thin-film

Info

Publication number
JPS5737853A
JPS5737853A JP11313480A JP11313480A JPS5737853A JP S5737853 A JPS5737853 A JP S5737853A JP 11313480 A JP11313480 A JP 11313480A JP 11313480 A JP11313480 A JP 11313480A JP S5737853 A JPS5737853 A JP S5737853A
Authority
JP
Japan
Prior art keywords
film
sio2
thin
shaped
edge section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11313480A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11313480A priority Critical patent/JPS5737853A/en
Publication of JPS5737853A publication Critical patent/JPS5737853A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form the multilayer film with ease, the surface thereof is smooth, and to improve the reliability of a semiconductor element by covering the a stage difference of the first thin-film shaped on a base body with an edge section with surface of curvature and stacking a thin-film. CONSTITUTION:The Al film 11 with approximately 1mu thickness is shaped on a main surface of SiO2 10 and patterned, and SiO2 12 is laminated by approximately 1mu at 380 deg.C in a gas of SiH4 and O2. The surface is etched by plasma by CF4 and H2. The surface of curvature is shaped to the edge section 13 of the Al film 11 through reactive ionic etching having the directional property. When SiO2 14 is further stacked, the edge section 13 is smoothed, and the multilayer thin-film, the surface thereof is smooth, is completed.
JP11313480A 1980-08-18 1980-08-18 Forming method for multilayer thin-film Pending JPS5737853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11313480A JPS5737853A (en) 1980-08-18 1980-08-18 Forming method for multilayer thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11313480A JPS5737853A (en) 1980-08-18 1980-08-18 Forming method for multilayer thin-film

Publications (1)

Publication Number Publication Date
JPS5737853A true JPS5737853A (en) 1982-03-02

Family

ID=14604403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11313480A Pending JPS5737853A (en) 1980-08-18 1980-08-18 Forming method for multilayer thin-film

Country Status (1)

Country Link
JP (1) JPS5737853A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216445A (en) * 1982-06-10 1983-12-16 Nec Corp Semiconductor device and manufacture thereof
JPS59117237A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS59161050A (en) * 1983-03-03 1984-09-11 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6057953A (en) * 1983-09-09 1985-04-03 Toshiba Corp Manufacture of semiconductor device
JPS618953A (en) * 1984-06-25 1986-01-16 Nec Corp Manufacture of semiconductor device
JPS6119176A (en) * 1984-07-06 1986-01-28 Toshiba Corp Manufacture of semiconductor device
JPS61102752A (en) * 1984-10-26 1986-05-21 Toshiba Corp Semiconductor device and manufacture thereof
JPS61222236A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58216445A (en) * 1982-06-10 1983-12-16 Nec Corp Semiconductor device and manufacture thereof
JPS6343892B2 (en) * 1982-06-10 1988-09-01 Nippon Electric Co
JPS59117237A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS59161050A (en) * 1983-03-03 1984-09-11 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6057953A (en) * 1983-09-09 1985-04-03 Toshiba Corp Manufacture of semiconductor device
JPH0530066B2 (en) * 1983-09-09 1993-05-07 Tokyo Shibaura Electric Co
JPS618953A (en) * 1984-06-25 1986-01-16 Nec Corp Manufacture of semiconductor device
JPS6119176A (en) * 1984-07-06 1986-01-28 Toshiba Corp Manufacture of semiconductor device
JPS61102752A (en) * 1984-10-26 1986-05-21 Toshiba Corp Semiconductor device and manufacture thereof
JPH0337297B2 (en) * 1984-10-26 1991-06-05 Tokyo Shibaura Electric Co
JPS61222236A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

Similar Documents

Publication Publication Date Title
JPS5737853A (en) Forming method for multilayer thin-film
GB1452633A (en) Fabrication of solar cells with anti-reflective coating
US5877092A (en) Method for edge profile and design rules control
JPS57204165A (en) Manufacture of charge coupling element
JPS56125855A (en) Manufacture of semiconductor device
JPS57124440A (en) Compound etching method
JPS55157234A (en) Manufacture of semiconductor device
JPS56130925A (en) Manufacture of semiconductor device
JPS5763842A (en) Preparation of semiconductor integrated circuit
JPS54125979A (en) Manufacture of semiconductor device
JPS57208618A (en) Production of thin film magnetic head
JPS56148845A (en) Manufacture of semiconductor device
JPS55154750A (en) Manufacture of semiconductor device
JPS5718327A (en) Production of semiconductor device
JPS5617042A (en) Manufacture of semiconductor device
JPS5568655A (en) Manufacturing method of wiring
JPS5357774A (en) Dielectric insulated and isolated substrate and its production
JPS5743412A (en) Reduced pressure cvd method
JPH0396236A (en) Semiconductor element and manufacture thereof
JPS5613733A (en) Forming method for electrode
JPS5624939A (en) Manufacture of semiconductor device
JPS56148824A (en) Formation of electrode
JPS57190355A (en) Semiconductor device
JPS55107243A (en) Manufacture of semiconductor device
JPS5796524A (en) Manufacture of semiconductor device