JPS6092610A - ボロン拡散量の制御方法 - Google Patents

ボロン拡散量の制御方法

Info

Publication number
JPS6092610A
JPS6092610A JP20053483A JP20053483A JPS6092610A JP S6092610 A JPS6092610 A JP S6092610A JP 20053483 A JP20053483 A JP 20053483A JP 20053483 A JP20053483 A JP 20053483A JP S6092610 A JPS6092610 A JP S6092610A
Authority
JP
Japan
Prior art keywords
boron
diffusion
glass layer
wafer
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20053483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228246B2 (enrdf_load_stackoverflow
Inventor
Takanori Hitomi
隆典 人見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP20053483A priority Critical patent/JPS6092610A/ja
Publication of JPS6092610A publication Critical patent/JPS6092610A/ja
Publication of JPH0228246B2 publication Critical patent/JPH0228246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
JP20053483A 1983-10-26 1983-10-26 ボロン拡散量の制御方法 Granted JPS6092610A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20053483A JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20053483A JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Publications (2)

Publication Number Publication Date
JPS6092610A true JPS6092610A (ja) 1985-05-24
JPH0228246B2 JPH0228246B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=16425900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20053483A Granted JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Country Status (1)

Country Link
JP (1) JPS6092610A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160718A (ja) * 1986-01-08 1987-07-16 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体デバイスの製造方法
US5171708A (en) * 1990-08-22 1992-12-15 Shin-Etsu Handotai Co., Ltd. Method of boron diffusion into semiconductor wafers having reduced stacking faults
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film
WO2013180244A1 (ja) * 2012-05-31 2013-12-05 富士電機株式会社 半導体装置の製造方法
RU2594652C1 (ru) * 2014-02-25 2016-08-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ формирования затворной области силового транзистора

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element
JPS58147113A (ja) * 1982-02-11 1983-09-01 オ−エンス−イリノイ・インコ−ポレ−テツド ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element
JPS58147113A (ja) * 1982-02-11 1983-09-01 オ−エンス−イリノイ・インコ−ポレ−テツド ド−ピングされた酸化フイルムおよびド−ピングされた半導体の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160718A (ja) * 1986-01-08 1987-07-16 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体デバイスの製造方法
US5171708A (en) * 1990-08-22 1992-12-15 Shin-Etsu Handotai Co., Ltd. Method of boron diffusion into semiconductor wafers having reduced stacking faults
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film
WO2013180244A1 (ja) * 2012-05-31 2013-12-05 富士電機株式会社 半導体装置の製造方法
JPWO2013180244A1 (ja) * 2012-05-31 2016-01-21 富士電機株式会社 半導体装置の製造方法
US9450070B2 (en) 2012-05-31 2016-09-20 Fuji Electric Co., Ltd. Method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereon
RU2594652C1 (ru) * 2014-02-25 2016-08-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ формирования затворной области силового транзистора

Also Published As

Publication number Publication date
JPH0228246B2 (enrdf_load_stackoverflow) 1990-06-22

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