JPH0228246B2 - - Google Patents

Info

Publication number
JPH0228246B2
JPH0228246B2 JP58200534A JP20053483A JPH0228246B2 JP H0228246 B2 JPH0228246 B2 JP H0228246B2 JP 58200534 A JP58200534 A JP 58200534A JP 20053483 A JP20053483 A JP 20053483A JP H0228246 B2 JPH0228246 B2 JP H0228246B2
Authority
JP
Japan
Prior art keywords
boron
diffusion
wafer
gas
glass layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58200534A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6092610A (ja
Inventor
Takanori Hitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP20053483A priority Critical patent/JPS6092610A/ja
Publication of JPS6092610A publication Critical patent/JPS6092610A/ja
Publication of JPH0228246B2 publication Critical patent/JPH0228246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP20053483A 1983-10-26 1983-10-26 ボロン拡散量の制御方法 Granted JPS6092610A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20053483A JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20053483A JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Publications (2)

Publication Number Publication Date
JPS6092610A JPS6092610A (ja) 1985-05-24
JPH0228246B2 true JPH0228246B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=16425900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20053483A Granted JPS6092610A (ja) 1983-10-26 1983-10-26 ボロン拡散量の制御方法

Country Status (1)

Country Link
JP (1) JPS6092610A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600022A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een doteringselement vanuit zijn oxide in een halfgeleiderlichaam wordt gediffundeerd.
JPH0758698B2 (ja) * 1990-08-22 1995-06-21 信越半導体株式会社 半導体ウエーハヘのボロン拡散方法
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film
JP6135666B2 (ja) 2012-05-31 2017-05-31 富士電機株式会社 半導体装置の製造方法
RU2594652C1 (ru) * 2014-02-25 2016-08-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ формирования затворной области силового транзистора

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor

Also Published As

Publication number Publication date
JPS6092610A (ja) 1985-05-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees