JPS60186053A - 薄膜相補型ｍｏｓ回路 - Google Patents

薄膜相補型ｍｏｓ回路

Info

Publication number
JPS60186053A
JPS60186053A JP59042411A JP4241184A JPS60186053A JP S60186053 A JPS60186053 A JP S60186053A JP 59042411 A JP59042411 A JP 59042411A JP 4241184 A JP4241184 A JP 4241184A JP S60186053 A JPS60186053 A JP S60186053A
Authority
JP
Japan
Prior art keywords
thin film
type
drain
region
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59042411A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586674B2 (enrdf_load_stackoverflow
Inventor
Yoshifumi Tsunekawa
吉文 恒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP59042411A priority Critical patent/JPS60186053A/ja
Publication of JPS60186053A publication Critical patent/JPS60186053A/ja
Publication of JPH0586674B2 publication Critical patent/JPH0586674B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59042411A 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路 Granted JPS60186053A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042411A JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042411A JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6231631A Division JP2562419B2 (ja) 1994-09-27 1994-09-27 相補型薄膜トランジスタの製造方法
JP6231630A Division JP2647020B2 (ja) 1994-09-27 1994-09-27 相補型薄膜トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60186053A true JPS60186053A (ja) 1985-09-21
JPH0586674B2 JPH0586674B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=12635322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042411A Granted JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Country Status (1)

Country Link
JP (1) JPS60186053A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057889A (en) * 1987-07-06 1991-10-15 Katsuhiko Yamada Electronic device including thin film transistor
JPH04206971A (ja) * 1990-11-30 1992-07-28 Sharp Corp 薄膜半導体装置
US5341028A (en) * 1990-10-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
JP2001068680A (ja) * 1999-04-06 2001-03-16 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002299631A (ja) * 2001-03-30 2002-10-11 Fujitsu Ltd 表示装置及びその製造方法
US6911926B2 (en) 1997-11-27 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7168598B2 (en) 2001-09-04 2007-01-30 L'oreal Device for dispensing a product
US7253440B1 (en) * 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
JP2010206100A (ja) * 2009-03-05 2010-09-16 Renesas Electronics Corp 半導体装置
US7977750B2 (en) 1999-04-06 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102263101A (zh) * 2010-11-03 2011-11-30 友达光电股份有限公司 模拟缓冲电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113177A (en) * 1976-03-18 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5721855A (en) * 1980-07-16 1982-02-04 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS5750463A (en) * 1980-09-11 1982-03-24 Toshiba Corp Complementary type mos semiconductor device
JPS5771170A (en) * 1980-10-22 1982-05-01 Toshiba Corp Manufacture of complementary mos semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113177A (en) * 1976-03-18 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5721855A (en) * 1980-07-16 1982-02-04 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS5750463A (en) * 1980-09-11 1982-03-24 Toshiba Corp Complementary type mos semiconductor device
JPS5771170A (en) * 1980-10-22 1982-05-01 Toshiba Corp Manufacture of complementary mos semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057889A (en) * 1987-07-06 1991-10-15 Katsuhiko Yamada Electronic device including thin film transistor
US5341028A (en) * 1990-10-09 1994-08-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
US5444282A (en) * 1990-10-09 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
JPH04206971A (ja) * 1990-11-30 1992-07-28 Sharp Corp 薄膜半導体装置
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7253440B1 (en) * 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7550790B2 (en) 1997-11-27 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US6911926B2 (en) 1997-11-27 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7184017B2 (en) 1997-11-27 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
JP2001068680A (ja) * 1999-04-06 2001-03-16 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7977750B2 (en) 1999-04-06 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8541844B2 (en) 1999-04-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2002299631A (ja) * 2001-03-30 2002-10-11 Fujitsu Ltd 表示装置及びその製造方法
US7168598B2 (en) 2001-09-04 2007-01-30 L'oreal Device for dispensing a product
JP2010206100A (ja) * 2009-03-05 2010-09-16 Renesas Electronics Corp 半導体装置
CN102263101A (zh) * 2010-11-03 2011-11-30 友达光电股份有限公司 模拟缓冲电路
EP2450954A1 (en) * 2010-11-03 2012-05-09 AU Optronics Corp. Architecture of analog buffer circuit

Also Published As

Publication number Publication date
JPH0586674B2 (enrdf_load_stackoverflow) 1993-12-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term