JPS6014238A - 基板上に多重層レジストを形成する方法 - Google Patents

基板上に多重層レジストを形成する方法

Info

Publication number
JPS6014238A
JPS6014238A JP59028829A JP2882984A JPS6014238A JP S6014238 A JPS6014238 A JP S6014238A JP 59028829 A JP59028829 A JP 59028829A JP 2882984 A JP2882984 A JP 2882984A JP S6014238 A JPS6014238 A JP S6014238A
Authority
JP
Japan
Prior art keywords
layer
polysilane
substrate
resist
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59028829A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376742B2 (enExample
Inventor
ヒロユキ・ヒラオカ
ドナルド・クリフオ−ド・ホフア−
ロバ−ト・デニス・ミラ−
レスタ−・アリン・ベダ−ソン
カ−ルトン・グラント・ウイルソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6014238A publication Critical patent/JPS6014238A/ja
Publication of JPH0376742B2 publication Critical patent/JPH0376742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
  • Silicon Polymers (AREA)
JP59028829A 1983-06-28 1984-02-20 基板上に多重層レジストを形成する方法 Granted JPS6014238A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/508,644 US4464460A (en) 1983-06-28 1983-06-28 Process for making an imaged oxygen-reactive ion etch barrier
US508644 1983-06-28

Publications (2)

Publication Number Publication Date
JPS6014238A true JPS6014238A (ja) 1985-01-24
JPH0376742B2 JPH0376742B2 (enExample) 1991-12-06

Family

ID=24023509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59028829A Granted JPS6014238A (ja) 1983-06-28 1984-02-20 基板上に多重層レジストを形成する方法

Country Status (4)

Country Link
US (1) US4464460A (enExample)
EP (1) EP0130338B1 (enExample)
JP (1) JPS6014238A (enExample)
DE (1) DE3470965D1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226748A (ja) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Ｘ線レジスト
JPS62153852A (ja) * 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS63129622A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置の製造方法
JPS63184746A (ja) * 1984-04-05 1988-07-30 アメリカ合衆国 基板表面にポジ像を形成する方法
JPS63204253A (ja) * 1987-02-20 1988-08-23 Hitachi Ltd パタン形成法
JPH0643655A (ja) * 1991-03-04 1994-02-18 Internatl Business Mach Corp <Ibm> レジスト画像の生成プロセス及び電子デバイス
US7026099B2 (en) 2002-04-24 2006-04-11 Kabushiki Kaisha Toshiba Pattern forming method and method for manufacturing semiconductor device

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587205A (en) * 1984-04-05 1986-05-06 The United States Of America As Represented By The United States Department Of Energy Method of using polysilane positive photoresist materials
US4523372A (en) * 1984-05-07 1985-06-18 Motorola, Inc. Process for fabricating semiconductor device
US5674648A (en) * 1984-08-06 1997-10-07 Brewer Science, Inc. Anti-reflective coating
US4892617A (en) * 1984-08-22 1990-01-09 American Telephone & Telegraph Company, At&T Bell Laboratories Processes involving lithographic materials
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4778739A (en) * 1986-08-25 1988-10-18 International Business Machines Corporation Photoresist process for reactive ion etching of metal patterns for semiconductor devices
US5039593A (en) * 1986-10-31 1991-08-13 Zeigler John K Poly(silyl silane) homo and copolymers
US4820788A (en) * 1986-10-31 1989-04-11 John M. Zeigler Poly(silyl silane)homo and copolymers
US4772525A (en) * 1987-05-01 1988-09-20 Xerox Corporation Photoresponsive imaging members with high molecular weight polysilylene hole transporting compositions
US4758488A (en) * 1987-08-24 1988-07-19 Xerox Corporation Stabilized polysilylenes and imaging members therewith
JPH01118126A (ja) * 1987-10-31 1989-05-10 Fujitsu Ltd パターン形成方法
US5082872A (en) * 1987-11-12 1992-01-21 Dow Corning Corporation Infusible preceramic polymers via ultraviolet treatment in the presence of a reactive gas
US5270259A (en) * 1988-06-21 1993-12-14 Hitachi, Ltd. Method for fabricating an insulating film from a silicone resin using O.sub.
US5212050A (en) * 1988-11-14 1993-05-18 Mier Randall M Method of forming a permselective layer
JP2737225B2 (ja) * 1989-03-27 1998-04-08 松下電器産業株式会社 微細パターン形成材料およびパターン形成方法
US5166038A (en) * 1989-07-27 1992-11-24 International Business Machines Corporation Etch resistant pattern formation via interfacial silylation process
RU2118964C1 (ru) * 1992-11-02 1998-09-20 Государственный научно-исследовательский институт химии и технологии элементоорганических соединений Полиорганосиланы и двухслойная позитивная маска для фотолитографии на основе полиорганосилана
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
JPH1160735A (ja) * 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
US6100172A (en) * 1998-10-29 2000-08-08 International Business Machines Corporation Method for forming a horizontal surface spacer and devices formed thereby
JP2001198900A (ja) * 2000-01-22 2001-07-24 Yoshikazu Nakayama 超微細探針によるリソグラフィ法
JP2001308002A (ja) * 2000-02-15 2001-11-02 Canon Inc フォトマスクを用いたパターン作製方法、及びパターン作製装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615538A (en) * 1968-08-02 1971-10-26 Printing Dev Inc Photosensitive printing plates
US4036813A (en) * 1975-11-26 1977-07-19 General Electric Company Composition for promoting adhesion of curable silicones to substrates
JPS55166647A (en) * 1979-06-15 1980-12-25 Fuji Photo Film Co Ltd Photoconductive composition and electrophotographic receptor using this

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184746A (ja) * 1984-04-05 1988-07-30 アメリカ合衆国 基板表面にポジ像を形成する方法
JPS61226748A (ja) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Ｘ線レジスト
JPS62153852A (ja) * 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS63129622A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置の製造方法
JPS63204253A (ja) * 1987-02-20 1988-08-23 Hitachi Ltd パタン形成法
JPH0643655A (ja) * 1991-03-04 1994-02-18 Internatl Business Mach Corp <Ibm> レジスト画像の生成プロセス及び電子デバイス
US7026099B2 (en) 2002-04-24 2006-04-11 Kabushiki Kaisha Toshiba Pattern forming method and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
DE3470965D1 (en) 1988-06-09
JPH0376742B2 (enExample) 1991-12-06
EP0130338A3 (en) 1985-11-21
EP0130338A2 (en) 1985-01-09
US4464460A (en) 1984-08-07
EP0130338B1 (en) 1988-05-04

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