JPH042183B2 - - Google Patents

Info

Publication number
JPH042183B2
JPH042183B2 JP59120299A JP12029984A JPH042183B2 JP H042183 B2 JPH042183 B2 JP H042183B2 JP 59120299 A JP59120299 A JP 59120299A JP 12029984 A JP12029984 A JP 12029984A JP H042183 B2 JPH042183 B2 JP H042183B2
Authority
JP
Japan
Prior art keywords
resist
layer
pattern
substrate
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59120299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60263145A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59120299A priority Critical patent/JPS60263145A/ja
Publication of JPS60263145A publication Critical patent/JPS60263145A/ja
Publication of JPH042183B2 publication Critical patent/JPH042183B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP59120299A 1984-06-12 1984-06-12 ポジ型レジストパタ−ンの形成方法 Granted JPS60263145A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59120299A JPS60263145A (ja) 1984-06-12 1984-06-12 ポジ型レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59120299A JPS60263145A (ja) 1984-06-12 1984-06-12 ポジ型レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS60263145A JPS60263145A (ja) 1985-12-26
JPH042183B2 true JPH042183B2 (enExample) 1992-01-16

Family

ID=14782794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59120299A Granted JPS60263145A (ja) 1984-06-12 1984-06-12 ポジ型レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60263145A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621230A (ja) * 1985-06-27 1987-01-07 Toshiba Corp パタ−ン形成方法
JP2005539393A (ja) * 2002-09-18 2005-12-22 学校法人東京理科大学 表面加工方法
US7629596B2 (en) 2005-02-21 2009-12-08 Tokyo University Of Science Educational Foundation Administrative Organization Method of producing 3-D mold, method of producing finely processed product, method of producing fine-pattern molded product, 3-D mold, finely processed product, fine-pattern molded product and optical component

Also Published As

Publication number Publication date
JPS60263145A (ja) 1985-12-26

Similar Documents

Publication Publication Date Title
EP0069854B1 (en) Method of forming via holes in insulating layers
JPH0147008B2 (enExample)
JPS6323657B2 (enExample)
JPH065560A (ja) 半導体装置の製造方法
US20040072096A1 (en) Micropattern forming material and fine structure forming method
US7341939B2 (en) Method for patterning micro features by using developable bottom anti-reflection coating
US5139922A (en) Method of making resist pattern
TW200300962A (en) Improved lithography process for transparent substrates
US4476216A (en) Method for high resolution lithography
JP3119021B2 (ja) 半導体装置のコンタクトホール形成方法
JPS60263145A (ja) ポジ型レジストパタ−ンの形成方法
KR100811410B1 (ko) 레지스트 플로우 공정 및 코팅막 형성 공정을 포함하는반도체 소자의 제조 방법
JPH0334053B2 (enExample)
Berker et al. Characterization of AZ-2415 as a negative electron resist
JPH0318179B2 (enExample)
JPH02156244A (ja) パターン形成方法
JPS63117422A (ja) 半導体装置の製造方法
JPH0943855A (ja) レジストパターン形成方法
JPH0313949A (ja) レジストパターンの形成方法
KR930006133B1 (ko) 모스소자의 콘택트홀 형성방법
TW202603501A (zh) 利用可交聯被覆膜的多重圖案化
JPH01303432A (ja) 感光性樹脂組成物
JPH0458170B2 (enExample)
JP3570107B2 (ja) レジストパターンの形成方法及び半導体装置の製造方法
Nagaswami et al. A Simple Pre‐Exposure Treatment to Improve Post‐Develop Photoresist Step Coverage