JPS6012737A - 窒化シリコン膜の製造方法 - Google Patents

窒化シリコン膜の製造方法

Info

Publication number
JPS6012737A
JPS6012737A JP58118079A JP11807983A JPS6012737A JP S6012737 A JPS6012737 A JP S6012737A JP 58118079 A JP58118079 A JP 58118079A JP 11807983 A JP11807983 A JP 11807983A JP S6012737 A JPS6012737 A JP S6012737A
Authority
JP
Japan
Prior art keywords
film
sin
density
internal stress
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58118079A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456453B2 (enExample
Inventor
Toshiaki Miyajima
利明 宮嶋
Katsuteru Awane
粟根　克昶
Masayoshi Koba
木場　正義
Atsushi Kudo
淳 工藤
Tadayuki Morishita
森下　賢幸
Kazumasa Kioi
一雅 鬼追
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58118079A priority Critical patent/JPS6012737A/ja
Publication of JPS6012737A publication Critical patent/JPS6012737A/ja
Publication of JPH0456453B2 publication Critical patent/JPH0456453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—

Landscapes

  • Formation Of Insulating Films (AREA)
JP58118079A 1983-07-01 1983-07-01 窒化シリコン膜の製造方法 Granted JPS6012737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58118079A JPS6012737A (ja) 1983-07-01 1983-07-01 窒化シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58118079A JPS6012737A (ja) 1983-07-01 1983-07-01 窒化シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6012737A true JPS6012737A (ja) 1985-01-23
JPH0456453B2 JPH0456453B2 (enExample) 1992-09-08

Family

ID=14727472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58118079A Granted JPS6012737A (ja) 1983-07-01 1983-07-01 窒化シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6012737A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634624A (ja) * 1986-06-25 1988-01-09 Sony Corp 半導体装置の製造方法
US4948482A (en) * 1987-12-29 1990-08-14 Hoya Corporation Method for forming silicon nitride film
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
JPH06333922A (ja) * 1993-05-19 1994-12-02 Nippondenso Co Ltd 装置保護膜および装置保護膜の製造方法
WO2002047170A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
JP2021147678A (ja) * 2020-03-23 2021-09-27 株式会社アルバック 誘電体膜の形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830789A (enExample) * 1971-08-23 1973-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830789A (enExample) * 1971-08-23 1973-04-23

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634624A (ja) * 1986-06-25 1988-01-09 Sony Corp 半導体装置の製造方法
US4948482A (en) * 1987-12-29 1990-08-14 Hoya Corporation Method for forming silicon nitride film
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
JPH06333922A (ja) * 1993-05-19 1994-12-02 Nippondenso Co Ltd 装置保護膜および装置保護膜の製造方法
WO2002047170A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
JP2021147678A (ja) * 2020-03-23 2021-09-27 株式会社アルバック 誘電体膜の形成方法

Also Published As

Publication number Publication date
JPH0456453B2 (enExample) 1992-09-08

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