JPS5969495A - シリコン単結晶膜の形成方法 - Google Patents

シリコン単結晶膜の形成方法

Info

Publication number
JPS5969495A
JPS5969495A JP57178490A JP17849082A JPS5969495A JP S5969495 A JPS5969495 A JP S5969495A JP 57178490 A JP57178490 A JP 57178490A JP 17849082 A JP17849082 A JP 17849082A JP S5969495 A JPS5969495 A JP S5969495A
Authority
JP
Japan
Prior art keywords
silicon
substrate
gold
single crystal
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57178490A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0210120B2 (OSRAM
Inventor
Hidefumi Mori
森　英史
Yasuhiro Takasu
高須　保弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57178490A priority Critical patent/JPS5969495A/ja
Publication of JPS5969495A publication Critical patent/JPS5969495A/ja
Publication of JPH0210120B2 publication Critical patent/JPH0210120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP57178490A 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法 Granted JPS5969495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57178490A JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57178490A JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5969495A true JPS5969495A (ja) 1984-04-19
JPH0210120B2 JPH0210120B2 (OSRAM) 1990-03-06

Family

ID=16049361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57178490A Granted JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5969495A (OSRAM)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344715A (ja) * 1986-08-11 1988-02-25 Sony Corp シリコン単結晶の形成方法
JPS63182809A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法
JPS63237340A (ja) * 1987-03-26 1988-10-03 Canon Inc 表示装置
JPH01149335A (ja) * 1987-12-03 1989-06-12 Canon Inc 電子放出素子
US4983539A (en) * 1987-02-28 1991-01-08 Canon Kabushiki Kaisha Process for producing a semiconductor article
US4999313A (en) * 1986-11-07 1991-03-12 Canon Kabushiki Kaisha Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site
AU623086B2 (en) * 1987-08-24 1992-05-07 Canon Kabushiki Kaisha Method of forming crystalline compound semiconductor film
US5130103A (en) * 1987-08-24 1992-07-14 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
AU632204B2 (en) * 1986-03-31 1992-12-17 Canon Kabushiki Kaisha Method for forming a deposited film
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
AU645538B2 (en) * 1986-03-28 1994-01-20 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
AU651568B2 (en) * 1986-03-31 1994-07-28 Canon Kabushiki Kaisha Method for forming crystalline deposited film
AU651806B2 (en) * 1986-04-11 1994-08-04 Canon Kabushiki Kaisha Method for forming crystalline deposited film
AU651805B2 (en) * 1986-03-31 1994-08-04 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
WO1997005304A1 (de) * 1995-07-28 1997-02-13 Forschungsverbund Berlin E.V. Verfahren zur herstellung von kristallinen schichten
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
AU645538B2 (en) * 1986-03-28 1994-01-20 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
AU632204B2 (en) * 1986-03-31 1992-12-17 Canon Kabushiki Kaisha Method for forming a deposited film
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
AU651805B2 (en) * 1986-03-31 1994-08-04 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
AU651568B2 (en) * 1986-03-31 1994-07-28 Canon Kabushiki Kaisha Method for forming crystalline deposited film
AU651806B2 (en) * 1986-04-11 1994-08-04 Canon Kabushiki Kaisha Method for forming crystalline deposited film
JPS6344715A (ja) * 1986-08-11 1988-02-25 Sony Corp シリコン単結晶の形成方法
US4999313A (en) * 1986-11-07 1991-03-12 Canon Kabushiki Kaisha Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material
JPS63182809A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法
US4983539A (en) * 1987-02-28 1991-01-08 Canon Kabushiki Kaisha Process for producing a semiconductor article
JPS63237340A (ja) * 1987-03-26 1988-10-03 Canon Inc 表示装置
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5010033A (en) * 1987-03-27 1991-04-23 Canon Kabushiki Kaisha Process for producing compound semiconductor using an amorphous nucleation site
US5130103A (en) * 1987-08-24 1992-07-14 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
AU623086B2 (en) * 1987-08-24 1992-05-07 Canon Kabushiki Kaisha Method of forming crystalline compound semiconductor film
JPH01149335A (ja) * 1987-12-03 1989-06-12 Canon Inc 電子放出素子
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
WO1997005304A1 (de) * 1995-07-28 1997-02-13 Forschungsverbund Berlin E.V. Verfahren zur herstellung von kristallinen schichten

Also Published As

Publication number Publication date
JPH0210120B2 (OSRAM) 1990-03-06

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