JPH0210120B2 - - Google Patents

Info

Publication number
JPH0210120B2
JPH0210120B2 JP17849082A JP17849082A JPH0210120B2 JP H0210120 B2 JPH0210120 B2 JP H0210120B2 JP 17849082 A JP17849082 A JP 17849082A JP 17849082 A JP17849082 A JP 17849082A JP H0210120 B2 JPH0210120 B2 JP H0210120B2
Authority
JP
Japan
Prior art keywords
silicon
substrate
crystal
single crystal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17849082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5969495A (ja
Inventor
Hidefumi Mori
Yasuhiro Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57178490A priority Critical patent/JPS5969495A/ja
Publication of JPS5969495A publication Critical patent/JPS5969495A/ja
Publication of JPH0210120B2 publication Critical patent/JPH0210120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP57178490A 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法 Granted JPS5969495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57178490A JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57178490A JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5969495A JPS5969495A (ja) 1984-04-19
JPH0210120B2 true JPH0210120B2 (OSRAM) 1990-03-06

Family

ID=16049361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57178490A Granted JPS5969495A (ja) 1982-10-13 1982-10-13 シリコン単結晶膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5969495A (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JP2670442B2 (ja) * 1986-03-31 1997-10-29 キヤノン株式会社 結晶の形成方法
CA1337170C (en) * 1986-03-31 1995-10-03 Jinsho Matsuyama Method for forming crystalline deposited film
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film
CA1330191C (en) * 1986-03-31 1994-06-14 Jinsho Matsuyama Method for forming crystal and crystal article obtained by said method
CA1329756C (en) * 1986-04-11 1994-05-24 Yutaka Hirai Method for forming crystalline deposited film
JPS6344715A (ja) * 1986-08-11 1988-02-25 Sony Corp シリコン単結晶の形成方法
JPS63119218A (ja) * 1986-11-07 1988-05-23 Canon Inc 半導体基材とその製造方法
JP2651144B2 (ja) * 1987-01-26 1997-09-10 キヤノン株式会社 結晶基材の製造方法
JP2616918B2 (ja) * 1987-03-26 1997-06-04 キヤノン株式会社 表示装置
JP2654055B2 (ja) * 1987-02-28 1997-09-17 キヤノン株式会社 半導体基材の製造方法
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
EP0307109A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
EP0305144A3 (en) * 1987-08-24 1989-03-08 Canon Kabushiki Kaisha Method of forming crystalline compound semiconductor film
JP2632883B2 (ja) * 1987-12-03 1997-07-23 キヤノン株式会社 電子放出素子
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
AU7082596A (en) * 1995-07-28 1997-02-26 Forschungsverbund Berlin E.V. Method of producing crystalline layers

Also Published As

Publication number Publication date
JPS5969495A (ja) 1984-04-19

Similar Documents

Publication Publication Date Title
US4534820A (en) Method for manufacturing crystalline film
JPH0210120B2 (OSRAM)
US3655439A (en) Method of producing thin layer components with at least one insulating intermediate layer
DE3788745T2 (de) Verfahren zur Herstellung eines Kristalls und Kristallkörper, die nach diesem Verfahren hergestellt werden.
US4477308A (en) Heteroepitaxy of multiconstituent material by means of a _template layer
JPS6256651B2 (OSRAM)
JPH04180219A (ja) 結晶の形成方法
WO1992022689A1 (en) Process for making large-area single crystal diamond films
US5821135A (en) Methods for and applications of making buried structures in semiconductor thin films
DE69520196T2 (de) Einkristalline-Dünnschicht aus Quarz und Verfahren zu ihrer Herstellung
US5190613A (en) Method for forming crystals
JPH0692280B2 (ja) 結晶薄膜の製造方法
EP0306153B1 (en) Method for growth of crystal
JPS5840820A (ja) シリコン単結晶膜形成法
JPS6119116A (ja) 半導体装置の製造方法
JP3520571B2 (ja) 単結晶の成長方法
JPS58212123A (ja) 単結晶薄膜の製造方法
JPS5983993A (ja) 単結晶半導体層の成長方法
JPH01149483A (ja) 太陽電池
JPH0236052B2 (OSRAM)
JPS59225516A (ja) 半導体装置の製法
JPH02191321A (ja) 結晶の形成方法
JPH0660401B2 (ja) シリコン薄膜製造方法
Givargizov Single-Crystal Growth on Amorphous Substrates
JPS58114420A (ja) 単結晶シリコン膜の形成法