JPH0236060B2 - - Google Patents

Info

Publication number
JPH0236060B2
JPH0236060B2 JP59191672A JP19167284A JPH0236060B2 JP H0236060 B2 JPH0236060 B2 JP H0236060B2 JP 59191672 A JP59191672 A JP 59191672A JP 19167284 A JP19167284 A JP 19167284A JP H0236060 B2 JPH0236060 B2 JP H0236060B2
Authority
JP
Japan
Prior art keywords
substrate
gaas
layer
temperature
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59191672A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6170715A (ja
Inventor
Masahiro Akyama
Yoshihiro Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59191672A priority Critical patent/JPS6170715A/ja
Publication of JPS6170715A publication Critical patent/JPS6170715A/ja
Publication of JPH0236060B2 publication Critical patent/JPH0236060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/24—
    • H10P14/3221—
    • H10P14/3421—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59191672A 1984-09-14 1984-09-14 化合物半導体の成長方法 Granted JPS6170715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59191672A JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59191672A JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS6170715A JPS6170715A (ja) 1986-04-11
JPH0236060B2 true JPH0236060B2 (OSRAM) 1990-08-15

Family

ID=16278536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59191672A Granted JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Country Status (1)

Country Link
JP (1) JPS6170715A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058961U (ja) * 1991-07-15 1993-02-05 スタンレー電気株式会社 表面実装型ｌｅｄ
JPH0579586U (ja) * 1991-05-28 1993-10-29 エムケー精工株式会社 発光ダイオード表示装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2676144B2 (ja) * 1987-07-27 1997-11-12 日本電信電話株式会社 砒化ガリウムの成長方法
EP0603780B1 (en) * 1992-12-21 1998-04-29 Nippon Steel Corporation Method of growing compound semiconductor on silicon wafer
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
US10096473B2 (en) * 2016-04-07 2018-10-09 Aixtron Se Formation of a layer on a semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0579586U (ja) * 1991-05-28 1993-10-29 エムケー精工株式会社 発光ダイオード表示装置
JPH058961U (ja) * 1991-07-15 1993-02-05 スタンレー電気株式会社 表面実装型ｌｅｄ

Also Published As

Publication number Publication date
JPS6170715A (ja) 1986-04-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term