JPS6170715A - 化合物半導体の成長方法 - Google Patents

化合物半導体の成長方法

Info

Publication number
JPS6170715A
JPS6170715A JP59191672A JP19167284A JPS6170715A JP S6170715 A JPS6170715 A JP S6170715A JP 59191672 A JP59191672 A JP 59191672A JP 19167284 A JP19167284 A JP 19167284A JP S6170715 A JPS6170715 A JP S6170715A
Authority
JP
Japan
Prior art keywords
layer
gaas
substrate
temperature
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59191672A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236060B2 (OSRAM
Inventor
Masahiro Akiyama
秋山　正博
Yoshihiro Kawarada
河原田　美裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59191672A priority Critical patent/JPS6170715A/ja
Publication of JPS6170715A publication Critical patent/JPS6170715A/ja
Publication of JPH0236060B2 publication Critical patent/JPH0236060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/24—
    • H10P14/3221—
    • H10P14/3421—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59191672A 1984-09-14 1984-09-14 化合物半導体の成長方法 Granted JPS6170715A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59191672A JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59191672A JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS6170715A true JPS6170715A (ja) 1986-04-11
JPH0236060B2 JPH0236060B2 (OSRAM) 1990-08-15

Family

ID=16278536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59191672A Granted JPS6170715A (ja) 1984-09-14 1984-09-14 化合物半導体の成長方法

Country Status (1)

Country Link
JP (1) JPS6170715A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430210A (en) * 1987-07-27 1989-02-01 Nippon Telegraph & Telephone Method for growing iii-v compound semiconductor
US5438951A (en) * 1992-12-21 1995-08-08 Nippon Steel Corporation Method of growing compound semiconductor on silicon wafer
EP0723039A2 (en) 1995-01-19 1996-07-24 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
JP2019517732A (ja) * 2016-04-07 2019-06-24 アイクストロン、エスイー 半導体基板上の層の形成

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0579586U (ja) * 1991-05-28 1993-10-29 エムケー精工株式会社 発光ダイオード表示装置
JPH058961U (ja) * 1991-07-15 1993-02-05 スタンレー電気株式会社 表面実装型ｌｅｄ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430210A (en) * 1987-07-27 1989-02-01 Nippon Telegraph & Telephone Method for growing iii-v compound semiconductor
US5438951A (en) * 1992-12-21 1995-08-08 Nippon Steel Corporation Method of growing compound semiconductor on silicon wafer
EP0723039A2 (en) 1995-01-19 1996-07-24 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
JP2019517732A (ja) * 2016-04-07 2019-06-24 アイクストロン、エスイー 半導体基板上の層の形成

Also Published As

Publication number Publication date
JPH0236060B2 (OSRAM) 1990-08-15

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