JPS5965428A - 異物検査装置 - Google Patents

異物検査装置

Info

Publication number
JPS5965428A
JPS5965428A JP57174524A JP17452482A JPS5965428A JP S5965428 A JPS5965428 A JP S5965428A JP 57174524 A JP57174524 A JP 57174524A JP 17452482 A JP17452482 A JP 17452482A JP S5965428 A JPS5965428 A JP S5965428A
Authority
JP
Japan
Prior art keywords
substrate
light
lens
laser beam
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57174524A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430574B2 (enrdf_load_stackoverflow
Inventor
Masataka Shiba
芝　正考
Nobuyuki Akiyama
秋山　伸幸
Yukio Uto
幸雄 宇都
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57174524A priority Critical patent/JPS5965428A/ja
Publication of JPS5965428A publication Critical patent/JPS5965428A/ja
Publication of JPH0430574B2 publication Critical patent/JPH0430574B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP57174524A 1982-10-06 1982-10-06 異物検査装置 Granted JPS5965428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57174524A JPS5965428A (ja) 1982-10-06 1982-10-06 異物検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57174524A JPS5965428A (ja) 1982-10-06 1982-10-06 異物検査装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28102291A Division JPH079407B2 (ja) 1991-10-28 1991-10-28 異物検査方法

Publications (2)

Publication Number Publication Date
JPS5965428A true JPS5965428A (ja) 1984-04-13
JPH0430574B2 JPH0430574B2 (enrdf_load_stackoverflow) 1992-05-22

Family

ID=15980025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57174524A Granted JPS5965428A (ja) 1982-10-06 1982-10-06 異物検査装置

Country Status (1)

Country Link
JP (1) JPS5965428A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188945A (ja) * 1986-02-14 1987-08-18 Canon Inc 表面状態測定装置
JPS636444A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査装置
JPS636442A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査方法及びその装置
JPS636854A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査装置
JPS636443A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd マスク上の異物検査装置およびその方法
JPS6333648A (ja) * 1986-07-28 1988-02-13 Canon Inc 表面状態検査装置
JPH0498149A (ja) * 1990-08-15 1992-03-30 Nec Corp 欠陥検査装置
JPH04204143A (ja) * 1990-11-30 1992-07-24 Hitachi Ltd レーザーによるシャフト表面き裂判別方法およびその装置
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
US5410400A (en) * 1991-06-26 1995-04-25 Hitachi, Ltd. Foreign particle inspection apparatus
US6002989A (en) * 1996-04-02 1999-12-14 Hitachi, Ltd. System for quality control where inspection frequency of inspection apparatus is reset to minimize expected total loss based on derived frequency function and loss value
US6064477A (en) * 1993-02-26 2000-05-16 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6894773B2 (en) 1991-04-02 2005-05-17 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
JP2010236920A (ja) * 2009-03-30 2010-10-21 Jasco Corp 微粒子測定装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191737A (enrdf_load_stackoverflow) * 1975-02-10 1976-08-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191737A (enrdf_load_stackoverflow) * 1975-02-10 1976-08-11

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188945A (ja) * 1986-02-14 1987-08-18 Canon Inc 表面状態測定装置
JPS636444A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査装置
JPS636442A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査方法及びその装置
JPS636854A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd 異物検査装置
JPS636443A (ja) * 1986-06-27 1988-01-12 Hitachi Ltd マスク上の異物検査装置およびその方法
JPS6333648A (ja) * 1986-07-28 1988-02-13 Canon Inc 表面状態検査装置
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
JPH0498149A (ja) * 1990-08-15 1992-03-30 Nec Corp 欠陥検査装置
JPH04204143A (ja) * 1990-11-30 1992-07-24 Hitachi Ltd レーザーによるシャフト表面き裂判別方法およびその装置
US6894773B2 (en) 1991-04-02 2005-05-17 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
US7177020B2 (en) 1991-04-02 2007-02-13 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
US5410400A (en) * 1991-06-26 1995-04-25 Hitachi, Ltd. Foreign particle inspection apparatus
US6084664A (en) * 1992-11-30 2000-07-04 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6064477A (en) * 1993-02-26 2000-05-16 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6002989A (en) * 1996-04-02 1999-12-14 Hitachi, Ltd. System for quality control where inspection frequency of inspection apparatus is reset to minimize expected total loss based on derived frequency function and loss value
JP2010236920A (ja) * 2009-03-30 2010-10-21 Jasco Corp 微粒子測定装置

Also Published As

Publication number Publication date
JPH0430574B2 (enrdf_load_stackoverflow) 1992-05-22

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