JPS5965428A - Foreign substance detector - Google Patents

Foreign substance detector

Info

Publication number
JPS5965428A
JPS5965428A JP57174524A JP17452482A JPS5965428A JP S5965428 A JPS5965428 A JP S5965428A JP 57174524 A JP57174524 A JP 57174524A JP 17452482 A JP17452482 A JP 17452482A JP S5965428 A JPS5965428 A JP S5965428A
Authority
JP
Japan
Prior art keywords
substrate
light
laser beam
point
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57174524A
Other languages
Japanese (ja)
Other versions
JPH0430574B2 (en
Inventor
Masataka Shiba
芝 正考
Nobuyuki Akiyama
秋山 伸幸
Yukio Uto
幸雄 宇都
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57174524A priority Critical patent/JPS5965428A/en
Publication of JPS5965428A publication Critical patent/JPS5965428A/en
Publication of JPH0430574B2 publication Critical patent/JPH0430574B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Abstract

PURPOSE:To detect a foreign substance on a substrate with excellent accuracy without being disturbed by a complex pattern or pellicle protective film by providing a screening plate which screens a regularly dispersed light from the pattern on the substrate and a slit which screens a dispersed light coming from other points than the point on the substrate irradiated by a laser beam. CONSTITUTION:A laser beam 18 is radiated on a substrate from an inclined direction. The reflected light from a foreign substance 36 is condensed by a lense 40 and separated from the reflected light from a pattern by a screening plate 22 placed on a Fourier transformation plain 16 and transformed by inverse-Fourier trasnformation by a lense 41 and passes through a slit 35 through which only the light from a conjugate point 33 of the point 36 where the foreign substance exists can pass and is injected into a photodetector 34. A reflected light from a foreign substance on a pillicle protective film 11 is focused on the point other than the point 33 because the laser beam 18 is radiated from the inclined direction. Thus, if a pin-hole or a slit 35 is provided to the point 33, only the reflected light from the substrate 1 is received by the photodetector 34.

Description

【発明の詳細な説明】 本発明はフォトマスクやレクチル(以下基板という)の
表面に付着する異物を検査する異物検査装置に関するも
のであシ、更に詳しくはパターンや異物付着防止用のペ
リクル保護膜からの影響をうけにくい光学系を有する異
物検査装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a foreign matter inspection device for inspecting foreign matter adhering to the surface of a photomask or reticle (hereinafter referred to as a substrate), and more specifically to a pellicle protective film for preventing adhesion of patterns and foreign matter. The present invention relates to a foreign matter inspection device having an optical system that is not easily influenced by foreign matter.

ガラスや石英などの透明薄板にクロムなどの層を形成し
、これをエツチングすることにより微細な透明−不透明
のパターンを形成する場合。
When a fine transparent-opaque pattern is formed by forming a layer of chromium or the like on a transparent thin plate such as glass or quartz and etching it.

基板表面に異物が存在すると露光の際に異物の影も転写
され不良が発生する。そこで、露光前の異物検査が不可
欠となる。
If foreign matter is present on the substrate surface, the shadow of the foreign matter will also be transferred during exposure, resulting in defects. Therefore, it is essential to inspect for foreign substances before exposure.

第1図は従来良く用いられている異、物検査装置の原理
を示す図である。同図において、基板1上にS偏光レー
ザ光2を照射すると、異物が存在しない場合にはS偏光
成分4のみが反射される0図示する様に異物6が存在す
ると、不規則な形状によシ、゛P偏光成分5も反射され
る。  ゛これ全レンズ6で集光し偏光板7に透過させ
ると、P偏光成分5のみが受光器8に入シ、異物5の存
在が検出される。
FIG. 1 is a diagram showing the principle of a conventional object inspection device. In the figure, when a substrate 1 is irradiated with an S-polarized laser beam 2, only the S-polarized light component 4 is reflected when there is no foreign object. The P-polarized light component 5 is also reflected. ``When all of the lenses 6 collect the light and transmit it through the polarizing plate 7, only the P-polarized light component 5 enters the light receiver 8, and the presence of the foreign object 5 is detected.

このとき、基板1上のパタエンの影響を少くするために
は、レーザ光2と基板1のなす角度ψをできるだけ小さ
くする必要がある。第2図は基板1上でよく用いられる
パターンの方向を示す図である。レーザ光2に対して、
パターンAは0@、パターンBは90′″、パターンC
は±456パターンDは±30@、パターンEは±60
@  の角Uをなしている。
At this time, in order to reduce the influence of the pattern on the substrate 1, it is necessary to make the angle ψ between the laser beam 2 and the substrate 1 as small as possible. FIG. 2 is a diagram showing the direction of patterns often used on the substrate 1. FIG. For laser beam 2,
Pattern A is 0@, pattern B is 90'', pattern C
is ±456, pattern D is ±30@, pattern E is ±60
It forms the angle U of @.

さて、パターンの微細化に伴い、検査後の異物付着防止
のため第3図に示す様なペリクル保護膜を装着するよう
に々ってきた。第3図において、10は金属製フレーム
であり、11はニトロセルロース製の薄膜である。
Now, as patterns become finer, a pellicle protective film as shown in FIG. 3 has been installed to prevent foreign matter from adhering after inspection. In FIG. 3, 10 is a metal frame, and 11 is a thin film made of nitrocellulose.

ところで、異物検査後のペリクル保護膜装着時にも異物
が付着する可能性が大きいため、ペリクル保護膜載着後
にも異物検査を行う必要がある。しかし、第6図に示す
様にペリクル保護膜装着後には基板1上にフレーム10
が存在するため、第1図の様にレーザ光2と基板1のな
す角ψを小さくすることができず、検出感度が低下する
という欠点がある。また、ペリクル保護膜上の異物やフ
レームからの反射光が受光器8に入るため検出感度が更
に低下する欠点がある。
By the way, since there is a high possibility that foreign matter will adhere even when the pellicle protective film is attached after the foreign matter inspection, it is necessary to perform the foreign matter inspection also after the pellicle protective film is attached. However, as shown in FIG. 6, after attaching the pellicle protective film, the frame 10 is placed on the substrate 1.
1, it is not possible to reduce the angle ψ between the laser beam 2 and the substrate 1 as shown in FIG. 1, resulting in a disadvantage that the detection sensitivity is reduced. In addition, since foreign matter on the pellicle protective film and reflected light from the frame enter the light receiver 8, there is a drawback that the detection sensitivity is further reduced.

本発明は上記した従来の異物検査装置の欠点に鑑みなさ
れたもので、複雑なパターンやペリクル保護膜に影響さ
れずに、基板上の異物を感度よく検出できる異物検査装
置を提供することを目的としている。
The present invention was made in view of the above-described shortcomings of the conventional foreign matter inspection device, and an object of the present invention is to provide a foreign matter inspection device that can detect foreign matter on a substrate with high sensitivity without being affected by a complicated pattern or a pellicle protective film. It is said that

本発明の異物検査装置は、半導体製造に用いられる基板
の表面に付着する異物を検査する装置であって、レーザ
光を斜方から基板に照射し走査する手段と、レーザ光の
照射点と焦点面がほぼ一致する様に基板・の上方に設け
られ、レーザ光の散乱光を集光する第1のレンズと、第
1のレンズのフーリエ変換面に設けられ、基板パターン
からの規則的散乱光′f:遮光する遮光板と。
The foreign matter inspection device of the present invention is a device for inspecting foreign matter adhering to the surface of a substrate used in semiconductor manufacturing, and includes means for obliquely irradiating and scanning a substrate with a laser beam, and a laser beam irradiation point and focus. A first lens is provided above the substrate so that the surfaces thereof almost coincide with each other to collect the scattered light of the laser beam, and a first lens is provided on the Fourier transform surface of the first lens to collect the regularly scattered light from the substrate pattern. 'f: A light-shielding plate that blocks light.

遮光板を通して得られる異物からの散乱光を逆フーリエ
変換する第2のレンズと、第2のレンズの結像点に設け
られ、基板上のレーザ光照射点以外からの散乱光を遮光
するスリットと、スリシトヲ通過した異物からの散乱光
(C受光する受光器とから構成されていることを特徴と
している。
a second lens that performs inverse Fourier transform on scattered light from a foreign substance obtained through a light shielding plate; and a slit provided at the imaging point of the second lens to block scattered light from sources other than the laser beam irradiation point on the substrate. It is characterized by being comprised of a light receiver that receives scattered light (C) from foreign objects that have passed through it.

次に本発明の原理について説明する。第4図に示す光学
系において、レンズ15の焦点17が基板1上のレーザ
光18の照射点と重力る様に配置すると、フーリエ変換
面16では第2図のパターンに対して第5図に示す様表
明線が形成される。
Next, the principle of the present invention will be explained. In the optical system shown in FIG. 4, if the focal point 17 of the lens 15 is arranged so as to be in contact with the irradiation point of the laser beam 18 on the substrate 1, the Fourier transform surface 16 will have the pattern shown in FIG. A line as shown is formed.

明線20は第2図のパターンB(90°)によるもので
あシ、明線21は第2図のパターンJ″:(±60°)
によるものである。従って、これらの明線部を遮光して
やれば、それ以外の不規則パターン(異物)からの反射
光のみが抽出できる。第5図において、22は遮光板を
示している。
Bright line 20 is based on pattern B (90°) in Figure 2, and bright line 21 is based on pattern J'' in Figure 2 (±60°).
This is due to Therefore, by shielding these bright line parts, only the reflected light from other irregular patterns (foreign objects) can be extracted. In FIG. 5, 22 indicates a light shielding plate.

また、第6図に示す様々光学系を考えると、レーザ光1
8の基板1上の点36からの反射光はし′ ンズ系30
によって点33の位置に結像する。これに対し、ペリク
ル保護膜11上の異物31からの反射光は、レーザ光1
8が斜めから照射1.ているため点32の位置に結像す
る。従って、点33の位置にピンホール又はスリット3
5を配置すれば、基板1からの反射光だりを受光器34
に入れることができる。
Also, considering the various optical systems shown in Fig. 6, the laser beam 1
The reflected light from the point 36 on the substrate 1 of 8 is reflected from the lens system 30.
An image is formed at the position of point 33. On the other hand, the reflected light from the foreign matter 31 on the pellicle protective film 11 is reflected by the laser beam 1.
8 is irradiated from an angle 1. Therefore, the image is formed at the position of point 32. Therefore, a pinhole or slit 3 is placed at the position of point 33.
5, the reflected light from the substrate 1 can be transferred to the receiver 34.
can be put in.

本発明の異物検出装置は、第5図と第6図に示す原理の
組合せによシ、パターンの影響とペリクル保護膜の影響
全除く事に特徴がある。
The foreign object detection device of the present invention is characterized by the combination of the principles shown in FIGS. 5 and 6, and in that the influence of the pattern and the influence of the pellicle protective film are completely eliminated.

以下添付の図面に示す実施例により、更に詳細に本発明
について説明する。第7図及び第8図は本発明の一実施
例を示1図である。第7図において、基板1の斜上方か
らレーザ光18が照射され、異物36上に小さなスポッ
トが形成されたとする。異物36からの反射光は、レン
ズ40によシ集光され、フーリエ変換面16上に置かれ
た第5図に示す様な遮光板によって、パターンからの反
射光と分離される。これがレンズ41で逆フーリエ変換
され、この場合レンズ40とレンズ41の合成光学系が
第6図に示すレンズ系30と等価になるため、異物36
が置かれている点の共役点33のみ通過できるスリット
35ヲ設ければ、異物36からの反射光のみが受光器3
4に入射する。
The present invention will be described in more detail below with reference to embodiments shown in the accompanying drawings. FIGS. 7 and 8 are views showing one embodiment of the present invention. In FIG. 7, it is assumed that the laser beam 18 is irradiated from diagonally above the substrate 1, and a small spot is formed on the foreign object 36. The reflected light from the foreign object 36 is focused by a lens 40, and is separated from the reflected light from the pattern by a light blocking plate as shown in FIG. 5 placed on the Fourier transform surface 16. This is inversely Fourier transformed by the lens 41, and in this case, the combined optical system of the lenses 40 and 41 becomes equivalent to the lens system 30 shown in FIG.
If a slit 35 is provided that allows only the conjugate point 33 of the point where the
4.

レーザ光18は紙面に垂直な方向に走査されるため、ス
リット35もこれに対応するため紙面に垂直の方向に細
長く形成されている。
Since the laser beam 18 is scanned in a direction perpendicular to the plane of the paper, the slit 35 is also formed to be elongated in the direction perpendicular to the plane of the paper to accommodate this.

第8図は第7図に示す実施例の余1視図である。FIG. 8 is a further perspective view of the embodiment shown in FIG. 7.

同図において、遮光板22は90”と60@のパターン
を遮光する様にしているが、こねは場合によυ90°ノ
ミの遮光にしたシ(パターンが0°、±45゜90°の
みから形成される場合)、90”、60”以外の遮光板
を入れる−こともできる。レーザ光182は走査光学系
51により20〜100μm程川のスポットに用られ、
基板1上を矢印5oの示1方向に走査を行う。レンズ4
0は散乱光を多0■込むため、Fl、2程度の明るいレ
ンズが望ましい。受光器34としては、フォトマルを使
用すれば良く、このときレーザ光以外の波長の外乱光を
防ぐため、第9図に示す様に受光器34とスリット35
の間にレンズ55′f:置いたシ、第10図に示1様に
干渉フィルタ56vil−置くことが好まし込。力お、
第9図と第10図において、52はスリット35を通過
する光線を示している。
In the same figure, the light shielding plate 22 is designed to shield the 90" and 60@ patterns, but in some cases, the light shielding plate 22 is designed to shield the light of υ90° (patterns from 0°, ±45°, 90° only) (if formed), a light shielding plate other than 90" or 60" can be inserted.The laser beam 182 is used by the scanning optical system 51 to spot a spot on the river of about 20 to 100 μm,
The substrate 1 is scanned in the direction indicated by the arrow 5o. lens 4
Since the lens 0 allows a lot of scattered light to enter, a lens as bright as FL2 is desirable. A photomultiplier may be used as the light receiver 34. At this time, in order to prevent disturbance light of wavelengths other than laser light, the light receiver 34 and the slit 35 are connected as shown in FIG.
It is preferable to place the lens 55'f between the lenses and the interference filter 56 as shown in FIG. Power,
In FIGS. 9 and 10, reference numeral 52 indicates a light beam passing through the slit 35. In FIG.

レーザ光は斜めから角度ψで照射されるため、基板1上
のスポットは一般に円形にならない。
Since the laser beam is irradiated obliquely at an angle ψ, the spot on the substrate 1 is generally not circular.

そこで、第8図に示す走査光学系51にはシリンドリカ
ルレンズを用いた補正光学系を用いる。
Therefore, a correction optical system using a cylindrical lens is used as the scanning optical system 51 shown in FIG.

第11図はその具体例を示す図であシ、レーザ発振器6
0から照射されるレーザ光はビームエキスパンダ61で
拡げられ、これがシリンドリカルレンズ62に入射され
る。これによって、レーザ光は長楕円断面を有するビー
ムに変換され、ガルバノミラ−63とレンズ64ヲ介し
て基板1上の点50に集光される。こうして、レーザ光
は基板1上でほぼ円形に集光する。レーザ光の走査はガ
ルバノミラ−63によって行なわれ、ガルバノミラ−6
3のかわシにポリゴンミラーを用いても良0 第7図及び第8図に示す実施例では、光学系の走査距離
が短いため、大きな基板全面の検査を行うためには第1
2図に示す様にテーブル送シと走査を繰シ返し行う。同
図において、7oは光学系に、よる走査を示し、71は
テーブル送勺にょる走査を示している。
FIG. 11 is a diagram showing a specific example of the laser oscillator 6.
Laser light irradiated from 0 is expanded by a beam expander 61, and is incident on a cylindrical lens 62. As a result, the laser beam is converted into a beam having an elongated elliptical cross section, and is focused on a point 50 on the substrate 1 via the galvanometer mirror 63 and the lens 64. In this way, the laser beam is focused on the substrate 1 in a substantially circular shape. Scanning of the laser beam is performed by a galvano mirror 63.
3. In the embodiments shown in FIGS. 7 and 8, the scanning distance of the optical system is short, so in order to inspect the entire surface of a large substrate, it is necessary to use a polygon mirror.
As shown in Figure 2, table feeding and scanning are repeated. In the figure, 7o indicates scanning by the optical system, and 71 indicates scanning by table feed.

第13図は第7図に示す受光器34の出力を受けて異物
の存否を検出する検出回路の一例を示す図である。同図
において、34はフォトマルで構成される受光器、10
0はマイクロコンピュータ、101はタイミング発生回
路、102はテーブルアドレスカウンタ、103はモー
タ駆動回路、104はモータ、105はガルバノミラ−
角度カウンタ。
FIG. 13 is a diagram showing an example of a detection circuit that detects the presence or absence of a foreign object by receiving the output from the light receiver 34 shown in FIG. 7. In the same figure, 34 is a photoreceiver composed of a photomultiplier, and 10
0 is a microcomputer, 101 is a timing generation circuit, 102 is a table address counter, 103 is a motor drive circuit, 104 is a motor, and 105 is a galvano mirror.
angle counter.

106はガルバノミラ−駆動回路、63はガルバノミラ
−1107は入力バッファ、110はアンプ、111は
コンパレータ、′120はスタート信号、121はタイ
ミングパルス、122は割込信号、123はアドレスデ
ータ、124は異物検出データである。
106 is a galvano mirror drive circuit, 63 is a galvano mirror, 1107 is an input buffer, 110 is an amplifier, 111 is a comparator, '120 is a start signal, 121 is a timing pulse, 122 is an interrupt signal, 123 is address data, 124 is foreign object detection It is data.

以上の説明から明らかな様に、本発明によれば、ペリク
ル保護膜の有無にかかわシなく、基板上の異物検査を精
度よく行うことができる。
As is clear from the above description, according to the present invention, foreign matter inspection on a substrate can be performed with high accuracy regardless of the presence or absence of a pellicle protective film.

従って、半導体製造時の不良品発生を押えるこトカテキ
、スループットの向上taれるという大きな効果がある
Therefore, it has the great effect of suppressing the occurrence of defective products during semiconductor manufacturing and improving throughput.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の異物検査装置の一例を示す斜視図、第2
図は基板上のパターンの方向を示す説明図、第3図はペ
リクル保腹膜装着の状態を示す斜視図、第4図は本発明
の原理であるフーリエ変換法を示す説明図、第5因は本
発明の原理である遮光板の状態を示す説明図、第6図は
本発明の原理であるスリット法を示す断面図。 第7図は本発明の実施例を示す断面図、第8図は第7図
に示す実施例の斜視図、第9図及び第10図は受光器の
入射光からレーザ光以外の光を除くための光学系を示す
断面図、第11図は走査光学系の概要を示す斜視図、第
12図は基板走査法の一例を示す説明−1第16図は検
査回路の一例を示すブロック図である。 1・・・基板       2,18.52・・・レー
ザ光5、31.36・・・異物 415、40.41.55.64  ・・・レンズ7.
22  ・・・偏光板    8.34  ・・・受光
器10・・・フレーム     11・・・ペリクル&
[膜16・・・フーリエ変換面  30・・・レンズ系
35・・・スリット51・・・走査光学系56・・・干
渉フィルタ   60・・・レーザ発振器61・・・ビ
ームエキスパンダ 62・・・シリントリ刀ルレンズ 63・・・ガルバノミラ− 第1図 〒2図 情5図 〒4図 ?i6図 刑7図 千8図 〒ε図 第107 罰11図 \ 蒙1?図
Fig. 1 is a perspective view showing an example of a conventional foreign matter inspection device;
The figure is an explanatory diagram showing the direction of the pattern on the substrate, Figure 3 is a perspective view showing the state of the pellicle peritoneal retention membrane attached, Figure 4 is an explanatory diagram showing the Fourier transform method which is the principle of the present invention, and the fifth factor is FIG. 6 is an explanatory view showing the state of a light shielding plate, which is the principle of the present invention, and FIG. 6 is a sectional view showing the slit method, which is the principle of the present invention. FIG. 7 is a sectional view showing an embodiment of the present invention, FIG. 8 is a perspective view of the embodiment shown in FIG. 7, and FIGS. 9 and 10 show that light other than laser light is removed from the incident light of the light receiver. 11 is a perspective view showing an overview of the scanning optical system, and FIG. 12 is an explanation showing an example of a substrate scanning method. FIG. 16 is a block diagram showing an example of an inspection circuit. be. 1... Substrate 2, 18.52... Laser beam 5, 31.36... Foreign matter 415, 40.41.55.64... Lens 7.
22... Polarizing plate 8.34... Light receiver 10... Frame 11... Pellicle &
[Membrane 16...Fourier transform surface 30...Lens system 35...Slit 51...Scanning optical system 56...Interference filter 60...Laser oscillator 61...Beam expander 62... Shirin Tori Lens 63... Galvano mirror - Figure 1 〒2 Illustration 5 Figure 4? i6 Figure Punishment Figure 7 Thousand Eight Figures ε Figure No. 107 Punishment Figure 11 \ Meng 1? figure

Claims (1)

【特許請求の範囲】[Claims] 半導体製造に用いられる基板の表面に付着する異物を検
査する装置において、レーザ光を斜方から基板に照射し
走査する手段と、該レーザ光の照射点と焦点面がほぼ一
致する様に基板の上方に設けられ、該レーザ光の散乱光
を集光する第1のレンズと、第1のレンズの7一リエ変
換面に設けられ、基板パターンからの規則的散乱光を遮
光する遮光板と、遮光板telして得られる異物からの
散乱光を逆フーリエ変換する第2のレンズと、第2のレ
ンズの結像点に設けられ、基板上のレーザ光照射点以外
からの散乱光を遮光するスリットと、スリットを通過し
た異物からの散乱光を受光する受光器から構成されるこ
とを特徴とする異物検査装置。
In an apparatus for inspecting foreign matter adhering to the surface of a substrate used in semiconductor manufacturing, there is a means for irradiating and scanning a substrate with a laser beam from an oblique direction, and a means for scanning the substrate by irradiating the substrate with a laser beam from an oblique direction. a first lens provided above and condensing the scattered light of the laser beam; a light shielding plate provided on the 7-layer conversion surface of the first lens to block regularly scattered light from the substrate pattern; A second lens that performs inverse Fourier transform on the scattered light from the foreign matter obtained by the light shielding plate, and a second lens provided at the imaging point of the second lens to block scattered light from other than the laser beam irradiation point on the substrate. A foreign object inspection device comprising a slit and a light receiver that receives scattered light from the foreign object that has passed through the slit.
JP57174524A 1982-10-06 1982-10-06 Foreign substance detector Granted JPS5965428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57174524A JPS5965428A (en) 1982-10-06 1982-10-06 Foreign substance detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57174524A JPS5965428A (en) 1982-10-06 1982-10-06 Foreign substance detector

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28102291A Division JPH079407B2 (en) 1991-10-28 1991-10-28 Foreign matter inspection method

Publications (2)

Publication Number Publication Date
JPS5965428A true JPS5965428A (en) 1984-04-13
JPH0430574B2 JPH0430574B2 (en) 1992-05-22

Family

ID=15980025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57174524A Granted JPS5965428A (en) 1982-10-06 1982-10-06 Foreign substance detector

Country Status (1)

Country Link
JP (1) JPS5965428A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188945A (en) * 1986-02-14 1987-08-18 Canon Inc Surface condition measuring apparatus
JPS636854A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign substance inspection apparatus
JPS636444A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign matter inspection device
JPS636442A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Method and device for foreign matter inspection
JPS636443A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign matter inspection device
JPS6333648A (en) * 1986-07-28 1988-02-13 Canon Inc Surface condition inspecting device
JPH0498149A (en) * 1990-08-15 1992-03-30 Nec Corp Defect inspection device
JPH04204143A (en) * 1990-11-30 1992-07-24 Hitachi Ltd Method and apparatus for discriminating crack in shaft surface with laser
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
US5410400A (en) * 1991-06-26 1995-04-25 Hitachi, Ltd. Foreign particle inspection apparatus
US6002989A (en) * 1996-04-02 1999-12-14 Hitachi, Ltd. System for quality control where inspection frequency of inspection apparatus is reset to minimize expected total loss based on derived frequency function and loss value
US6064477A (en) * 1993-02-26 2000-05-16 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6894773B2 (en) 1991-04-02 2005-05-17 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
JP2010236920A (en) * 2009-03-30 2010-10-21 Jasco Corp Particle measuring device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191737A (en) * 1975-02-10 1976-08-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191737A (en) * 1975-02-10 1976-08-11

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188945A (en) * 1986-02-14 1987-08-18 Canon Inc Surface condition measuring apparatus
JPS636854A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign substance inspection apparatus
JPS636444A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign matter inspection device
JPS636442A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Method and device for foreign matter inspection
JPS636443A (en) * 1986-06-27 1988-01-12 Hitachi Ltd Foreign matter inspection device
JPS6333648A (en) * 1986-07-28 1988-02-13 Canon Inc Surface condition inspecting device
JPH0629860B2 (en) * 1986-07-28 1994-04-20 キヤノン株式会社 Surface condition inspection device
US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
JPH0498149A (en) * 1990-08-15 1992-03-30 Nec Corp Defect inspection device
JPH04204143A (en) * 1990-11-30 1992-07-24 Hitachi Ltd Method and apparatus for discriminating crack in shaft surface with laser
US6894773B2 (en) 1991-04-02 2005-05-17 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
US7177020B2 (en) 1991-04-02 2007-02-13 Renesas Technology Corp. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
US5410400A (en) * 1991-06-26 1995-04-25 Hitachi, Ltd. Foreign particle inspection apparatus
US6084664A (en) * 1992-11-30 2000-07-04 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6064477A (en) * 1993-02-26 2000-05-16 Hitachi, Ltd. Method of and apparatus for inspecting reticle for defects
US6002989A (en) * 1996-04-02 1999-12-14 Hitachi, Ltd. System for quality control where inspection frequency of inspection apparatus is reset to minimize expected total loss based on derived frequency function and loss value
JP2010236920A (en) * 2009-03-30 2010-10-21 Jasco Corp Particle measuring device

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