JPH0334577B2 - - Google Patents

Info

Publication number
JPH0334577B2
JPH0334577B2 JP2615683A JP2615683A JPH0334577B2 JP H0334577 B2 JPH0334577 B2 JP H0334577B2 JP 2615683 A JP2615683 A JP 2615683A JP 2615683 A JP2615683 A JP 2615683A JP H0334577 B2 JPH0334577 B2 JP H0334577B2
Authority
JP
Japan
Prior art keywords
substrate
optical axis
optical system
pellicle
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2615683A
Other languages
Japanese (ja)
Other versions
JPS59152626A (en
Inventor
Masataka Shiba
Mitsuyoshi Koizumi
Yukio Uto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58026156A priority Critical patent/JPS59152626A/en
Priority to US06/548,516 priority patent/US4669875A/en
Publication of JPS59152626A publication Critical patent/JPS59152626A/en
Priority to US07/360,971 priority patent/USRE33991E/en
Publication of JPH0334577B2 publication Critical patent/JPH0334577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02Investigating particle size or size distribution
    • G01N15/0205Investigating particle size or size distribution by optical means
    • G01N2015/0238Single particle scatter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4792Polarisation of scatter light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/10Scanning
    • G01N2201/105Purely optical scan
    • G01N2201/1053System of scan mirrors for composite motion of beam

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、フオトマスクやレチクル等の透明基
板面上の異物検出において、特に、基板裏面や検
出面付近の障害物の影響をうけないようにした異
物検出装置に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention is aimed at detecting foreign objects on the surface of a transparent substrate such as a photomask or reticle, in particular, without being affected by obstacles on the back surface of the substrate or near the detection surface. The present invention relates to a foreign object detection device.

〔従来技術〕[Prior art]

半導体製造用のフオトマスクやレチクル等の透
面基板上の微小異物の検出では、レーザを基板に
対して斜めから照射し、異物からの散乱光を光電
子増倍管等の受光素子で検出する方法が試みられ
ている。
To detect microscopic foreign objects on transparent substrates such as photomasks and reticles for semiconductor manufacturing, a method is to irradiate the substrate obliquely with a laser and detect the scattered light from the foreign object with a photomultiplier tube or other light-receiving element. is being attempted.

第1図は、その例を示したものである。レーザ
発振器1を出たレーザ光4は、ガルバノミラー2
により偏向され、fθレーズ3を介し、光路4を通
し、透明基板5を、スポツト10が、走査線8に
沿つて移動するように走査される。異物等が存在
しないとレーザ光は反射し、直進する。一方、異
物等が存在すると、その散乱光は全方向に広がる
ので集光レンズ12と受光素子14から成る検出
光学系を走査線8をその延長方向から臨むような
形で設け、異物からの散乱光9を検出するもので
ある。透明基板5は、X方向に等速で移動するこ
とにより、レーザ光4のY方向の走査と併せて、
全面検出ができるようになつている。
FIG. 1 shows an example of this. Laser light 4 emitted from laser oscillator 1 passes through galvano mirror 2
The light beam is deflected by the f-theta laser 3 and passes through the optical path 4, and the transparent substrate 5 is scanned so that the spot 10 moves along the scanning line 8. If there are no foreign objects, the laser beam will be reflected and travel straight. On the other hand, if there is a foreign object, the scattered light will spread in all directions, so a detection optical system consisting of a condensing lens 12 and a light receiving element 14 is installed in such a way that the scanning line 8 faces from the direction in which it extends. It detects light 9. By moving the transparent substrate 5 at a constant speed in the X direction, in conjunction with the scanning of the laser beam 4 in the Y direction,
Full-scale detection is now possible.

また、最近は、透明基板5への異物付着を防止
するため、ニトロセルローズ製の薄膜7を金属枠
6に貼りつけた構造を持つペリクル膜が使用され
るようになり、この金属枠6でのレーザ光のけら
れを避けるために、照射角ω、検出角θを3〜40
度程度とるようになつてきた。
In addition, recently, in order to prevent foreign matter from adhering to the transparent substrate 5, a pellicle film having a structure in which a thin film 7 made of nitrocellulose is attached to a metal frame 6 has been used. To avoid vignetting of the laser beam, set the illumination angle ω and detection angle θ to 3 to 40.
I've started to take it more seriously.

第2図a〜dは、この装置において、検出され
得る異常散乱光の発生箇所を第1図のA方向から
見たものである。
FIGS. 2 a to 2 d show locations where abnormal scattered light is generated that can be detected in this apparatus, as viewed from direction A in FIG. 1.

まず、レーザ光4を角度ωで検出面上のD点に
照射すると基板5が透明のため、屈折光が基板裏
面Eに到達する。この位置にパターン15(第2
図a)や異物16(第2図b)が存在するとそこ
からの散乱光が検出され得る。
First, when the laser beam 4 is irradiated at point D on the detection surface at an angle ω, the refracted light reaches the back surface E of the substrate because the substrate 5 is transparent. Pattern 15 (second
If a foreign object 16 (FIG. 2b) is present, scattered light from the foreign object 16 can be detected.

また、ペリクル膜のある場合には、基板5の上
方にあるペリクルの薄膜7をレーザ光4が横切る
点Fに大きな異物16が存在する場合(第2図
c)や、基板5の表面で反射した光が、ペリクル
膜の金属枠6のエツヂに点Gでぶつかつた場合
(第2図d)に発生する散乱光が検出され得る。
In addition, when there is a pellicle film, if there is a large foreign object 16 at the point F where the laser beam 4 crosses the pellicle thin film 7 above the substrate 5 (FIG. 2c), or if the laser beam 4 is reflected on the surface of the substrate 5. When the scattered light hits the edge of the metal frame 6 of the pellicle membrane at point G (FIG. 2d), the scattered light generated can be detected.

従つて、上記の如き試みられた方法では、裏面
やペリクル膜等の障害物が誤検出の要因となる問
題点があつた。
Therefore, the methods tried above have the problem that obstacles such as the back surface or the pellicle film cause false detection.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記従来技術の問題点に鑑
み、基板上の回路パターン、ペリクル枠及びペリ
クル膜上の異物等によつて生じる散乱光の影響を
確実に除去し、基板上の異物を正確に検出できる
ようにした異物検出装置を提供することにある。
In view of the problems of the prior art described above, an object of the present invention is to reliably remove the influence of scattered light caused by foreign matter, etc. on the circuit pattern, pellicle frame, and pellicle film on the substrate, and to accurately remove foreign matter on the substrate. An object of the present invention is to provide a foreign object detection device capable of detecting foreign objects.

〔発明の概要〕[Summary of the invention]

即ち本発明は上記目的を達成するために、レー
ザ光源と該レーザ光源から出射されたレーザ光
を、枠のペリクルを形成した異物付着防止手段を
装着した基板面上にスポツト状に上記ペリクルを
通して照射すべく上記基板面の垂直方向に対して
傾斜させた第1の光軸を有する照明光学系と上記
レーザ光を上記第1の光軸に対して交叉角がほぼ
90度なる方向に走査する走査光学系とを有する照
明装置と、上記基板上の異物からの反射光を上記
ペリクルを通して検出すべく上記第1の光軸と基
板面上において交叉角としてほぼ90度で上記基板
面に垂直方向に対して傾斜させた第2の光軸を有
する検出集光光学系と該検出集光光学系により検
出される反射光の内、上記枠、ペリクル上の異物
及び基板上の回路パターンからの反射光を遮光
し、且つ上記第2の光軸に対して直角な面に対し
て傾けて上記基板上に照射されたレーザスポツト
の走査線の共役位置に設置されたスリツトと該ス
リツトを通過して得られる上記基板上の異物から
の反射光を受光して信号に変換する光電変換装置
とを有する検出装置とを備えたことを特徴とする
異物検出装置である。
That is, in order to achieve the above object, the present invention uses a laser light source and a laser light emitted from the laser light source to be irradiated in a spot shape through the pellicle onto the surface of a substrate on which a foreign matter adhesion prevention means formed with a pellicle of a frame is attached. The illumination optical system preferably has a first optical axis tilted with respect to a direction perpendicular to the substrate surface, and the laser beam is arranged at a substantially intersecting angle with respect to the first optical axis.
an illumination device having a scanning optical system that scans in a direction of 90 degrees, and an intersection angle of approximately 90 degrees between the first optical axis and the substrate surface in order to detect light reflected from a foreign object on the substrate through the pellicle. and a detection and focusing optical system having a second optical axis inclined with respect to a direction perpendicular to the substrate surface, and of the reflected light detected by the detection and focusing optical system, foreign matter on the frame, the pellicle, and the substrate are detected. a slit that blocks reflected light from the upper circuit pattern and is installed at a conjugate position of the scanning line of the laser spot irradiated onto the substrate at an angle with respect to a plane perpendicular to the second optical axis; and a photoelectric conversion device that receives reflected light from the foreign substance on the substrate obtained by passing through the slit and converts it into a signal.

〔発明の実施例〕[Embodiments of the invention]

以下本発明を図に示す実施例にもとづいて具体
的に説明する。第3図は本発明の異物検出装置の
一実施例を示したものである。即ち、本発明は第
1図に示す集光レンズ12と受光素子14との間
にスリツト13を設置し、基板上以外から得られ
る散乱光を遮光し、基板上に存在する異物のみを
検出出来るようにしたものである。詳述すると次
のようになる。即ち第2図に示した異常散乱光の
発生箇所を、基板上面から見ると、第4図に示す
如くなる。このようにレーザ光4は、D、E、
F、Gの各点で、散乱光を発生する可能がある。
この散乱光の一部を集光レンズ12で集光する
と、結像面18上に、D′、E′、F′、G′のスポツト
を形成する。そこでE′、F′、G′、の異常散乱光の
みを遮光するように、スリツト13を設ければ、
検査したい点Dからの散乱光のみを、受光素子1
4に到達される。ここで集光レンズ12の光軸
は、レーザ光4の走査線8の延長を含む平面内に
ある。
The present invention will be specifically described below based on embodiments shown in the drawings. FIG. 3 shows an embodiment of the foreign object detection device of the present invention. That is, in the present invention, the slit 13 is installed between the condenser lens 12 and the light receiving element 14 shown in FIG. 1, and the scattered light obtained from sources other than the substrate is blocked, so that only the foreign matter present on the substrate can be detected. This is how it was done. The details are as follows. That is, when the location where the abnormally scattered light occurs shown in FIG. 2 is viewed from the top surface of the substrate, it becomes as shown in FIG. 4. In this way, the laser beam 4 has D, E,
Scattered light may be generated at each point F and G.
When a part of this scattered light is focused by the condensing lens 12, spots D', E', F', and G' are formed on the imaging plane 18. Therefore, if the slit 13 is provided to block only the abnormally scattered light of E', F', and G',
Only the scattered light from the point D to be inspected is transmitted to the light receiving element 1.
4 is reached. Here, the optical axis of the condensing lens 12 is within a plane that includes the extension of the scanning line 8 of the laser beam 4.

一方、第5図は、第3図をC方向から見た図を
示している。集光レンズ12の光軸19は、レー
ザ光の走査線8に対してθの角度傾けてある。走
査線8上の点I、O、Jから出た散乱光は、集光
レンズ12により、像面18上に、I′、O′、J′の
点となつて結像する。従つて遮光板13としては
スリツト形状に形成した。これによつて透明基板
5上に存在する異物のみを検出することが出来
る。即ち透明基板5のD点のみから生じる散乱光
を検出することが出来る。
On the other hand, FIG. 5 shows a view of FIG. 3 viewed from direction C. The optical axis 19 of the condensing lens 12 is inclined at an angle of θ with respect to the scanning line 8 of the laser beam. The scattered lights emitted from points I, O, and J on the scanning line 8 are imaged by the condenser lens 12 as points I', O', and J' on the image plane 18. Therefore, the light shielding plate 13 is formed into a slit shape. This makes it possible to detect only foreign matter present on the transparent substrate 5. That is, scattered light generated only from point D on the transparent substrate 5 can be detected.

ところでスリツト13を、集光レンズの光軸1
9に直角、面20上に設けると、光軸外の点がデ
フオーカスするため、第6図に示すように、異物
散乱光の遮光に対する効果が無くなる。ここで、
13aはスリツト板、24はスリツトの開口部2
2は、検出したい走査線の結像軌跡、23は、裏
面からの散乱光の集光軌跡、E1〜E3は、異常散
乱光のスポツトの大きさを示し、検出散乱光との
重なりが多くなり、弁別が不可能であることがわ
かる。
By the way, the slit 13 is the optical axis 1 of the condenser lens.
If it is provided on the surface 20 at a right angle to the optical axis 9, a point off the optical axis will be defocused, and as shown in FIG. 6, the effect on blocking the light scattered by foreign objects will be lost. here,
13a is a slit plate, 24 is an opening 2 of the slit
2 is the imaging trajectory of the scanning line to be detected, 23 is the condensing trajectory of the scattered light from the back surface, and E 1 to E 3 are the sizes of the spots of abnormal scattered light, and the overlap with the detected scattered light is It turns out that there are so many that it is impossible to discriminate.

しかし、スリツト13bを、第5図の結像面1
8に沿うように傾けてやれば、第7図のようにな
り、両者の弁別が可能となる。
However, the slit 13b is
If it is tilted along the line 8, it will look like the one shown in Fig. 7, and it will be possible to distinguish between the two.

この時、像面の傾きは、集光レンズ12の光
軸19上での倍率をmとする時、次式で与えられ
る。
At this time, the inclination of the image plane is given by the following equation, where m is the magnification of the condensing lens 12 on the optical axis 19.

tan=1/mtanθ 従つて、mが大きい場合、の値が小さくなり
スリツトの傾きが大きくなつてしまい検出が困難
となる。例えば、θが15°の時、mを0.27程度に
すれば、は約45゜になり、スリツトを設けやす
い角度にすることが可能である。このように集光
レンズの倍率は、θの角度にもよるが、1以下に
する必要がある。
tan=1/mtanθ Therefore, when m is large, the value of becomes small and the slope of the slit becomes large, making detection difficult. For example, when θ is 15°, if m is set to about 0.27, then becomes about 45°, which makes it possible to set the angle at which it is easy to form a slit. As described above, the magnification of the condensing lens needs to be 1 or less, although it depends on the angle of θ.

ところで、透明基板に照射されるレーザ光のス
ポツトの大きさは一定であるから、第5図でI、
O、Jが結像するI′、O′、J′におけるスポツトの
像の大きさは、それぞれ倍率が異なるため変化す
る。また、異常散乱光の軌跡も同様の理由で変化
するため、第6図、第7図で23と22が平行で
なくなつている。
By the way, since the size of the spot of the laser beam irradiated onto the transparent substrate is constant, I,
The sizes of the spot images at I', O', and J' formed by O and J vary because their respective magnifications are different. Furthermore, since the locus of the anomalous scattered light changes for the same reason, 23 and 22 are no longer parallel in FIGS. 6 and 7.

この性質に着目して、弁別比を確保しかつ、ス
ポツトのX方向のフラツキに対する許容値を大き
くするには、スリツト13cの形状を第8図に示
すように変形させてやれば良い事がわかる。この
時スリツト13cの幅は、レーザスポツトの集光
レンズによる収差をも含めた像の大きさよりも大
きいことが必要である。
Focusing on this property, it can be seen that in order to secure the discrimination ratio and increase the tolerance for spot fluctuation in the X direction, the shape of the slit 13c can be modified as shown in Fig. 8. . At this time, the width of the slit 13c needs to be larger than the size of the image including the aberration caused by the condensing lens of the laser spot.

スリツトは、第3図の13bに示すように、集
光レンズ12と受光素子14の間に設けられる
が、実際には第9図に示すように、スリツト13
bと受光素子14の間に、さらに集光用のフイー
ルドレンズ25を設けると良い。これは、スリツ
トが傾いているために、受光素子をスリツトに十
分近づけることが不可能で、散乱光を受光素子の
受光面26に集めることがフイールドレンズ無し
では無理であるからである。
The slit is provided between the condenser lens 12 and the light receiving element 14, as shown in 13b in FIG. 3, but in reality, as shown in FIG.
It is preferable to further provide a field lens 25 for condensing light between the light receiving element 14 and the light receiving element 14. This is because since the slit is inclined, it is impossible to bring the light receiving element close enough to the slit, and it is impossible to collect the scattered light on the light receiving surface 26 of the light receiving element without a field lens.

検出光学系は、第9図に示す構成を基本とし
て、光路途中に偏光板やNDフイルタを挿入し、
検出感度の向上を図るものもある。
The detection optical system is basically configured as shown in Figure 9, with a polarizing plate and ND filter inserted in the middle of the optical path.
Some aim to improve detection sensitivity.

なお、スリツト13の組み付けにおいては、レ
ーザ光の走査線の集光レンズによる軌跡とスリツ
トの位置とを正確に合わせてやる必要がある。そ
こで検出光学系において、スリツトにのみ、微調
整機構を設けてやる必要がある。第9図では、例
えば少なくともx、y方向の微調が不可欠であ
り、必要があればx〓方向やy〓方向の回転微調機構
を設ける。
In assembling the slit 13, it is necessary to accurately align the locus of the scanning line of the laser beam formed by the condensing lens with the position of the slit. Therefore, in the detection optical system, it is necessary to provide a fine adjustment mechanism only at the slit. In FIG. 9, for example, fine adjustment in at least the x and y directions is essential, and if necessary, a rotational fine adjustment mechanism in the x direction and the y direction is provided.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、透明基板
上の微小異物の検査において、基板裏面の回路パ
ターン、ペリクル膜上の異物及びペリクル枠等か
らの散乱光が全く無視できるため、基板上の微小
異物を誤検出率を著しく低下することができ、自
動検査後の目視確認の時間を短縮したり、不必要
な洗浄回数の低減を図るという効果があり、生産
コストの低減、生産性の向上に寄与する。
As explained above, according to the present invention, when inspecting minute foreign matter on a transparent substrate, scattered light from the circuit pattern on the back side of the substrate, foreign matter on the pellicle film, pellicle frame, etc. can be completely ignored. It can significantly reduce the rate of false detection of foreign objects, shorten the time for visual confirmation after automatic inspection, and reduce the number of unnecessary cleanings, reducing production costs and improving productivity. Contribute.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の異物検出装置の一例を示す斜視
図、第2図は異常散乱光の発生箇所を示す第1図
A方向からの側面図、第3図は本発明の異物検出
装置の一実施例を示す図、第4図は本発明に傾る
異常散乱光の遮光法を示す上面図、第5図はスリ
ツトの原理を示す第3図C方向からの側面図、第
6図、第7図、第8図は第3図B方向から見たス
リツトの形状、第9図は検出光学系の実際を示す
第3図C方向からの側面図である。 4……レーザ光、5……透明基板、8……走査
線、12……集光レンズ、13,13a,13
b,13c……スリツト、14……受光素子、2
4……スリツト開口、25……フイールドレン
ズ。
FIG. 1 is a perspective view showing an example of a conventional foreign object detection device, FIG. 2 is a side view from the direction A in FIG. 4 is a top view showing a method of shielding abnormally scattered light according to the present invention, FIG. 5 is a side view from the direction C of FIG. 3 showing the principle of slits, and FIGS. 7 and 8 are the shapes of the slits seen from the direction B in FIG. 3, and FIG. 9 is a side view from the direction C in FIG. 3 showing the actual detection optical system. 4... Laser light, 5... Transparent substrate, 8... Scanning line, 12... Condensing lens, 13, 13a, 13
b, 13c...slit, 14...light receiving element, 2
4...Slit aperture, 25...Field lens.

Claims (1)

【特許請求の範囲】 1 レーザ光源と該レーザ光源から出射されたレ
ーザ光を、枠にペリクルを形成した異物付着防止
手段を装着した基板面上にスポツト状に上記ペリ
クルを通して照射すべく上記基板面の垂直方向に
対して傾斜させた第1の光軸を有する照明光学系
と上記レーザ光を上記第1の光軸に対して交叉角
がほぼ90度なる方向に走査する走査光学系とを有
する照明装置と、上記基板上の異物からの反射光
を上記ペリクルを通して検出すべく上記第1の光
軸と基板面上において交叉角としてほぼ90度で上
記基板面の垂直方向に対して傾斜させた第2の光
軸を有する検出集光光学系と該検出集光光学系に
より検出される反射光の内、上記枠、ペリクル上
の異物及び基板上の回路パターンからの反射光を
遮光し、且つ上記基板上に照射されたレーザスポ
ツトの走査線の共役位置に上記第2の光軸に対し
て直角な面に対して傾けて設置されたスリツトと
該スリツトを通過して得られる上記基板上の異物
からの反射光を受光して信号に変換する光電変換
装置とを有する検出装置とを備えたことを特徴と
する異物検出装置。 2 上記スリツトの幅を上記走査線上の位置に応
じて変化する上記検出集光光学系の倍率に合わせ
て変化させたことを特徴とする特許請求の範囲第
1項記載の異物検出装置。
[Scope of Claims] 1. A laser light source and a laser light emitted from the laser light source are irradiated onto the substrate surface in a spot-like manner through the pellicle onto the substrate surface, which is equipped with a foreign matter adhesion prevention means having a pellicle formed in a frame. an illumination optical system having a first optical axis tilted with respect to the perpendicular direction; and a scanning optical system that scans the laser beam in a direction having an intersecting angle of approximately 90 degrees with respect to the first optical axis. The illumination device is tilted with respect to the vertical direction of the substrate surface at an intersection angle of approximately 90 degrees between the first optical axis and the substrate surface in order to detect reflected light from a foreign substance on the substrate through the pellicle. Of the reflected light detected by the detection focusing optical system having a second optical axis and the detection focusing optical system, the reflected light from the foreign matter on the frame, the pellicle, and the circuit pattern on the substrate is blocked, and A slit is installed at a conjugate position of the scanning line of the laser spot irradiated onto the substrate and is inclined with respect to a plane perpendicular to the second optical axis. A foreign object detection device comprising: a detection device having a photoelectric conversion device that receives reflected light from a foreign object and converts it into a signal. 2. The foreign object detection device according to claim 1, wherein the width of the slit is changed in accordance with the magnification of the detection and focusing optical system that changes depending on the position on the scanning line.
JP58026156A 1982-11-04 1983-02-21 Device for detecting foreign matter Granted JPS59152626A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58026156A JPS59152626A (en) 1983-02-21 1983-02-21 Device for detecting foreign matter
US06/548,516 US4669875A (en) 1982-11-04 1983-11-03 Foreign particle detecting method and apparatus
US07/360,971 USRE33991E (en) 1982-11-04 1989-06-02 Foreign particle detecting method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026156A JPS59152626A (en) 1983-02-21 1983-02-21 Device for detecting foreign matter

Publications (2)

Publication Number Publication Date
JPS59152626A JPS59152626A (en) 1984-08-31
JPH0334577B2 true JPH0334577B2 (en) 1991-05-23

Family

ID=12185676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026156A Granted JPS59152626A (en) 1982-11-04 1983-02-21 Device for detecting foreign matter

Country Status (1)

Country Link
JP (1) JPS59152626A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577920B2 (en) * 1987-07-24 1997-02-05 株式会社 堀場製作所 Foreign substance inspection device
JPH0621879B2 (en) * 1987-11-14 1994-03-23 株式会社堀場製作所 Foreign substance presence inspection device
JPH02194352A (en) * 1989-01-24 1990-07-31 Fuji Electric Co Ltd Inspection device for surface of transparent substrate
US7158208B2 (en) 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146682A (en) * 1976-05-27 1977-12-06 Ferranti Ltd Surface inspecting apparatus
JPS5671173A (en) * 1979-11-14 1981-06-13 Hitachi Ltd Pattern detection method of printed circuit substrate
JPS5780546A (en) * 1980-11-07 1982-05-20 Nippon Kogaku Kk <Nikon> Detecting device for foreign substance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146682A (en) * 1976-05-27 1977-12-06 Ferranti Ltd Surface inspecting apparatus
JPS5671173A (en) * 1979-11-14 1981-06-13 Hitachi Ltd Pattern detection method of printed circuit substrate
JPS5780546A (en) * 1980-11-07 1982-05-20 Nippon Kogaku Kk <Nikon> Detecting device for foreign substance

Also Published As

Publication number Publication date
JPS59152626A (en) 1984-08-31

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