JP3106521B2 - Optical inspection equipment for transparent substrates - Google Patents

Optical inspection equipment for transparent substrates

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Publication number
JP3106521B2
JP3106521B2 JP03039871A JP3987191A JP3106521B2 JP 3106521 B2 JP3106521 B2 JP 3106521B2 JP 03039871 A JP03039871 A JP 03039871A JP 3987191 A JP3987191 A JP 3987191A JP 3106521 B2 JP3106521 B2 JP 3106521B2
Authority
JP
Japan
Prior art keywords
transparent substrate
light
optical system
light receiving
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03039871A
Other languages
Japanese (ja)
Other versions
JPH04277643A (en
Inventor
欣也 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
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Filing date
Publication date
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Priority to JP03039871A priority Critical patent/JP3106521B2/en
Publication of JPH04277643A publication Critical patent/JPH04277643A/en
Application granted granted Critical
Publication of JP3106521B2 publication Critical patent/JP3106521B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、透明基板の表面を光ス
ポットの走査により検査するための光学的検査装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical inspection apparatus for inspecting the surface of a transparent substrate by scanning a light spot.

【0002】[0002]

【従来の技術】
半導体の製造工程における光リソ
グラフィ用のパターンを備えたレチクルやマスクは、極
めて清浄な状態で露光に使用される必要があり、そのた
め表面上のゴミやホコリを完全に除去することが必要で
ある。このためにゴミやホコリ等の検査装置として、被
検物体の表面上でレーザスポットを斜めから照射して走
査させ、ゴミやホコリ等により散乱される光を検出する
装置が用いられている。
[Prior art]
A reticle or mask provided with a pattern for photolithography in a semiconductor manufacturing process needs to be used for exposure in an extremely clean state, and therefore it is necessary to completely remove dust and dust on the surface. For this reason, as an inspection device for dust and dust, a device that irradiates a laser spot obliquely on the surface of a test object and scans the surface to detect light scattered by dust and dust is used.

【0003】[0003]

【発明が解決しようとする課題】ところが従来の装置に
おいては、レチクル(マスク)が透明であるため、表面
の検査の際に、裏面上の形成された所定のパターンによ
る散乱光が迷光として検出系に混入して、誤検出の原因
となり、検出精度を低下させるという問題があった。
However, in the conventional apparatus, since the reticle (mask) is transparent, scattered light due to a predetermined pattern formed on the back surface is detected as stray light when inspecting the front surface. , Which causes erroneous detection and lowers the detection accuracy.

【0004】そこで本発明は、このような問題点に鑑み
てなされたもので、レチクルやマスク等の透明基板の表
面検査に際して、裏面での散乱光の影響を極力少なくし
て高い検出精度を有する検査装置を提供することを目的
とする。
Accordingly, the present invention has been made in view of such problems, and has a high detection accuracy by minimizing the influence of scattered light on the back surface when inspecting the surface of a transparent substrate such as a reticle or a mask. It is an object to provide an inspection device.

【0005】[0005]

【課題を解決する為の手段】上記問題点解決の為に本発
明では、基本的には図1の断面光路図に示す如く、被検
透明基板50上に光スポットを形成して所定の方向(図1
では紙面に垂直方向)で走査するための照射光学系10
と、該被検透明基板50上表面からの反射散乱光を検出す
るための検出光学系20とを有する光学的検査装置におい
て、前記検出光学系20として、被検透明基板50上の光ス
ポットの像を形成するための受光対物レンズ21と、該受
光対物レンズ21の像面上にて前記光スポットの走査軌跡
と共役なスリット開口24を有する遮光板23と、該遮光板
23のスリット開口24を通過する光を検出する光検出手段
60とを設け、被検透明基板50上において検出光学系20の
光軸Ax20を前記照射光学系10の光軸Ax10と同一方向に傾
斜させたものである。ここで、被検透明基板50表面から
の散乱光が受光対物レンズ22により集光され、スリット
開口24を通して検出される。そして、照射光学系10光軸
の傾斜角A、検出光学系20光軸の傾斜角B、受光対物レ
ンズ21の倍率及び前記スリット24の幅は、前記被検透明
基板の裏面からの散乱光が該スリット内に入射しないよ
うに組み合わせて構成したものである。
In order to solve the above-mentioned problems, according to the present invention, a light spot is basically formed on a transparent substrate 50 to be detected in a predetermined direction as shown in a sectional optical path diagram of FIG. (Figure 1
Irradiating optical system 10 for scanning in the direction perpendicular to the paper)
And an optical inspection apparatus having a detection optical system 20 for detecting reflected and scattered light from the upper surface of the test transparent substrate 50, wherein the detection optical system 20 includes a light spot on the test transparent substrate 50. A light-receiving objective lens 21 for forming an image, a light-shielding plate 23 having a slit opening 24 conjugate with the scanning locus of the light spot on the image plane of the light-receiving objective lens 21,
Light detection means for detecting light passing through 23 slit openings 24
And 60 is provided, in which is inclined to the optical axis Ax 20 of the detecting optical system 20 in the same direction as the optical axis Ax 10 of the illumination optical system 10 in a subject the transparent substrate 50 on. Here, the scattered light from the surface of the test transparent substrate 50 is collected by the light receiving objective lens 22 and detected through the slit opening 24. The inclination angle A of the optical axis of the irradiation optical system 10, the inclination angle B of the optical axis of the detection optical system 20, the magnification of the light receiving objective lens 21, and the width of the slit 24 are determined by scattering light from the rear surface of the transparent substrate to be measured. It is configured so that it does not enter the slit.

【0006】また、上記の基本構成において、検出光学
系20は、照射光学系10の光軸を挟んで、前記光スポット
の走査方向に偏芯して並列配置された2つの受光対物レ
ンズを有する構成とすることが好ましい。
In the above basic configuration, the detection optical system 20 has two light-receiving objective lenses eccentrically arranged in the scanning direction of the light spot with the optical axis of the irradiation optical system 10 interposed therebetween. It is preferable to have a configuration.

【0007】[0007]

【作用】図1に示した如く、被検透明基板50上において
検出光学系20の光軸Ax20を前記照射光学系10の光軸Ax10
と同一方向に傾斜させた構成における、具体的な構成を
図2を用いて説明する。図2は照射光学系により被検透
明基板50の表面50a 上に形成される光スポットを中心と
して、照射ビーム100 と受光ビーム200 との様子を示し
た概略断面の拡大図である。被検透明基板50の上面50a
上に集光された光スポットは、被検透明基板50内で屈折
し、裏面50b に達し、ここに形成されたパターン面から
の散乱光が発生する。この散乱光のうち、検出光学系に
入射して最も大きな影響を与える恐れがある光は、検出
光学系の光軸Ax20にほぼ平行で被検透明基板50表面50a
上にて受光ビーム200 に最も近い位置に到達する光線30
である。
[Action] As shown in Figure 1, the optical axis Ax 10 of the illumination optical system 10 and the optical axis Ax 20 of the detecting optical system 20 in a subject the transparent substrate 50 on
A specific configuration in the configuration inclined in the same direction as the above will be described with reference to FIG. FIG. 2 is an enlarged schematic cross-sectional view showing a state of an irradiation beam 100 and a reception beam 200 around a light spot formed on the surface 50a of the transparent substrate 50 to be inspected by the irradiation optical system. Upper surface 50a of test transparent substrate 50
The light spot condensed on the upper side is refracted in the test transparent substrate 50, reaches the back surface 50b, and scattered light is generated from the pattern surface formed here. Of the scattered light, the light which may be incident on the detection optical system giving the greatest effect is substantially parallel to the test transparent substrate 50 surface 50a to the optical axis Ax 20 of the detection optical system
Ray 30 reaching the position closest to the received beam 200 above
It is.

【0008】図2に示すように、照射光学系10のビーム
照射角すわなち照射光学系光軸と被検面法線との角度
A、検出光学系20のビーム受光角すわなち検出光学系光
軸と被検面法線との角度B、受光対物レンズ21の倍率及
び前記スリット24の幅に関して、被検透明基板50の裏面
50b から生ずる迷光を遮光する為の条件について説明す
る。
As shown in FIG. 2, the beam irradiation angle of the irradiation optical system 10, that is, the angle A between the optical axis of the irradiation optical system and the normal to the surface to be inspected, and the beam receiving angle of the detection optical system 20, that is, the detection optical system Regarding the angle B between the system optical axis and the normal to the surface to be inspected, the magnification of the light receiving objective lens 21 and the width of the slit 24, the back surface of the transparent substrate 50 to be inspected
The conditions for blocking stray light generated from 50b will be described.

【0009】被検透明基板50の裏面での散乱光が迷光と
ならない条件は、受光光学系20のスリット開口24に到達
できない条件であり、散乱光30が被検透明基板50から空
気中に射出する時の位置と光スポット位置との距離Δ
が、スリット幅δに受光対物レンズによる倍率M(実際
の光線の向きとは逆に、スリットが被検透明物体上に投
影される倍率)を掛けたものより大きくなることであ
る。このとき、スリット幅δは、受光対物レンズの収差
によるスポットの拡がりを考慮して決定されることが望
ましい。
The condition under which the scattered light on the back surface of the test transparent substrate 50 does not become stray light is a condition under which the light cannot reach the slit opening 24 of the light receiving optical system 20, and the scattered light 30 is emitted from the test transparent substrate 50 into the air. Distance between the light spot position and the light spot position
Is larger than the value obtained by multiplying the slit width δ by the magnification M by the light receiving objective lens (the magnification at which the slit is projected on the transparent object to be examined, contrary to the actual direction of the light beam). At this time, it is desirable that the slit width δ is determined in consideration of the spread of the spot due to the aberration of the light receiving objective lens.

【0010】ここで、受光対物レンズ22のスリット開口
24と被検透明基板表面50a 間の倍率M、及びスリット幅
δに対して、被検透明基板表面50a 上でのスリット開口
の幅はMδに相当する。図2で照射光学系10による集光
スポットの開口数、即ち集光対物レンズ11の開口数N
A1 、受光対物レンズ22の被検透明基板50側開口数NA2
については、以下の関係が成り立つ。
Here, the slit aperture of the light receiving objective lens 22
The width of the slit opening on the transparent substrate surface 50a corresponds to Mδ, with respect to the magnification M between the sample 24 and the transparent substrate surface 50a and the slit width δ. In FIG. 2, the numerical aperture of the converging spot by the irradiation optical system 10, that is, the numerical aperture N of the converging objective lens 11,
A 1 , numerical aperture NA 2 of light receiving objective lens 22 on the side of transparent substrate 50 to be tested
, The following relationship holds.

【0011】α = A − sin-1NA1 β = B + sin-1NA2 ここで、α、βはそれぞれ、照射ビーム内の最大角度の
光の入射角、及び受光ビーム内の最大角度の光の射出角
であり、α’、β’はそれぞれの被検透明基板50内での
屈折角である。従って、 nsin α’=sin α nsin β’=sin β の関係が成立しており、散乱光30が被検透明基板50から
空気中に射出する時の位置と光スポット位置との距離Δ
は、 Δ=d(tan α’− tan β') と与えられる。
Α = A−sin −1 NA 1 β = B + sin −1 NA 2 where α and β are the maximum incident angle of light in the irradiation beam and the maximum angle of light in the receiving beam, respectively. The light emission angles are α ′ and β ′ are the refraction angles in the respective transparent substrates 50 to be tested. Therefore, the following relationship holds: nsin α ′ = sin α nsin β ′ = sin β, and the distance Δ between the position when the scattered light 30 exits from the transparent substrate 50 into the air and the light spot position
Is given by Δ = d (tan α′−tan β ′).

【0012】ここで、最も大きな影響を生ずる恐れのあ
る散乱光線30の射出角をβと考えれば、受光光学系から
見た照射スポットとの距離は、Δcosβとなる。従っ
て、被検透明基板50の裏面での散乱光が迷光とならない
条件、即ち受光光学系20のスリット開口24に到達できな
い条件は、 Δcos β ≧ Mδ となる。
Here, assuming that the emission angle of the scattered light beam 30 that may cause the greatest influence is β, the distance from the irradiation spot viewed from the light receiving optical system is Δcosβ. Therefore, the condition that the scattered light on the back surface of the test transparent substrate 50 does not become stray light, that is, the condition that the scattered light cannot reach the slit opening 24 of the light receiving optical system 20 is Δcosβ ≧ Mδ.

【0013】いま、式を用いて書換えれば、 α(tan α’−tan β')cos β≧Mδ となり、この式が迷光を除くための条件を与える。計
算の都合上式において、cos βをcos β’に置き換え
ると d(tan α’−tan β')cos β’>d(tan α' −tan β')cos β≧Mδ tan α’cos β’−sin β’≧Mδ/d
Now, rewriting using the equation, α (tan α′−tan β ′) cos β ≧ Mδ, and this equation gives a condition for eliminating stray light. In the above formula, cos β is replaced by cos β ′, and d (tan α′−tan β ′) cos β ′> d (tan α′−tan β ′) cos β ≧ Mδ tan α′cos β ′ −sin β ′ ≧ Mδ / d

【0014】[0014]

【数2】 (Equation 2)

【0015】ここで、式を用いて書き直せば、満たす
べき条件は、
Here, by rewriting using the equation, the condition to be satisfied is:

【0016】[0016]

【数3】 (Equation 3)

【0017】となる。パターンからの迷光を小さくする
為には、検出光学系の射出角Bを照射光学系によるビー
ム入射側と同じ側にとり、しかも可能な限り大きくとる
ことが望ましい。その為には式よりα、n、d一定の
条件下ではMδを小さくすればよいことになる。
## EQU1 ## In order to reduce the stray light from the pattern, it is desirable to set the exit angle B of the detection optical system on the same side as the beam incident side of the irradiation optical system and make it as large as possible. For that purpose, it is sufficient to reduce Mδ under the condition of α, n, d being constant according to the equation.

【0018】[0018]

【実施例】以下、本発明の実施例について説明する。好
適な実施例の基本構成は、前述した第1図の断面光路図
に示すとおりであり、光源手段40からのレーザ光が対物
レンズ11及び反射鏡12を介して被検透明基板50上に集光
さる。被検透明基板50からの散乱光は、反射鏡21を介し
て受光対物レンズ22により遮光板23のスポット開口24上
に集光され、フィールドレンズ25を介して検出手段60に
より光電検出される。
Embodiments of the present invention will be described below. The basic configuration of the preferred embodiment is as shown in the cross-sectional optical path diagram of FIG. 1 described above, and the laser light from the light source means 40 is collected on the test transparent substrate 50 via the objective lens 11 and the reflecting mirror 12. Glow. The scattered light from the test transparent substrate 50 is condensed on the spot opening 24 of the light shielding plate 23 by the light receiving objective lens 22 via the reflecting mirror 21, and is photoelectrically detected by the detecting means 60 via the field lens 25.

【0019】図3は本発明の実施例の構成を示す斜視図
である。レーザ光源41から供給されるビームは、振動ミ
ラー42で偏向され、照射対物レンズとしてのfθレンズ
11によって、被検透明基板としての被検レチクル50上の
表面50a 上にレーザスポットを形成し、振動ミラー42の
振動に伴って軌跡51が描かれる。反射鏡12及び13は光路
を屈曲して所定の照射角Aでビームを照射するための機
能を有している。そして、照射光学系の光軸Ax20b を挟
んで、一対の検出光学系が並列かつ対象に配置されてい
る。各検出光学系は図1に示したのと同様の基本構成を
有している。具体的には、被検レチクル50の表面50a 上
のゴミやホコリ等の異物からの散乱光200 は、反射鏡21
で反射された後受光対物レンズ22a,22b により遮光板23
a,23b のスリット開口24a,24b 上に集光され、フィール
ドレンズ25a,25b を通して光電検出器60a,60b によって
光電検出される。ここで、検出光学系の反射鏡22は、検
出光学系の受光角度Bを前述した条件を満たすように適
切な角度に配置されている。そして、この構成において
も、各遮光板のスリット開口24a,24b が被検透明基板表
面50a 上のレーザスポット軌跡51と共役なのは言うまで
もない。
FIG. 3 is a perspective view showing the configuration of the embodiment of the present invention. A beam supplied from a laser light source 41 is deflected by a vibrating mirror 42 and is an fθ lens as an irradiation objective lens.
By 11, a laser spot is formed on the surface 50 a on the test reticle 50 as the test transparent substrate, and the trajectory 51 is drawn with the vibration of the vibrating mirror 42. The reflecting mirrors 12 and 13 have a function of irradiating a beam at a predetermined irradiation angle A by bending the optical path. Then, a pair of detection optical systems are arranged in parallel and symmetrically with the optical axis Ax 20b of the irradiation optical system interposed therebetween. Each detection optical system has the same basic configuration as that shown in FIG. Specifically, scattered light 200 from a foreign substance such as dust or dust on the surface 50a of the test reticle 50 is reflected by the reflecting mirror 21.
After the light is reflected by the light receiving objective lenses 22a and 22b,
The light is condensed on slit openings 24a and 24b of a and 23b, and is photoelectrically detected by photoelectric detectors 60a and 60b through field lenses 25a and 25b. Here, the reflection mirror 22 of the detection optical system is disposed at an appropriate angle so that the light receiving angle B of the detection optical system satisfies the above-described condition. Also in this configuration, it goes without saying that the slit openings 24a and 24b of each light shielding plate are conjugate with the laser spot locus 51 on the surface 50a of the transparent substrate to be measured.

【0020】被検透明基板50の裏面での散乱光が迷光と
ならない為に、前述した式よりα、n、d一定の条件
下ではMδを小さくすればよいのであるが、実際上スリ
ット幅δは、受光対物レンズの収差による拡がりて決ま
り、その値を小さくすることは困難である。このため、
受光対物レンズによる結像倍率Mを小さくすれば良いこ
とになるが、スリットの長さが長くなるため、走査軌跡
と受光対物レンズの大きさとの関係から、実用的には、
M≧2.5 程度とすることが好ましい。
In order to prevent the scattered light on the back surface of the test transparent substrate 50 from becoming stray light, Mδ may be reduced under the condition of α, n and d from the above equation. Is determined by the spread due to the aberration of the light receiving objective lens, and it is difficult to reduce the value. For this reason,
What is necessary is to reduce the imaging magnification M by the light receiving objective lens. However, since the length of the slit is long, practically, from the relationship between the scanning locus and the size of the light receiving objective lens,
It is preferable that M ≧ 2.5.

【0021】すなわち、このような比較的小さい倍率範
囲においては、レチクル側の開口数を一定とした場合、
スリット側の開口数が小さくなり、スリット長は長くな
るものの、収差によるスポットの拡がりをより小さくす
ることができるのでスリット幅を小さくすることが可能
となり、迷光をより良好に除去することが可能となり、
相乗効果を生ずる。
That is, in such a relatively small magnification range, when the numerical aperture on the reticle side is fixed,
Although the numerical aperture on the slit side becomes smaller and the slit length becomes longer, the spread of the spot due to aberration can be made smaller, so the slit width can be made smaller, and stray light can be more effectively removed. ,
This produces a synergistic effect.

【0022】このような観点から求められた好適な数値
例は以下のとおりである。 A=45°、NA1 =0.0357(F/14に相当)、d=2.3 、
n=1.5 、M=3.5 、δ=0.2のとき β’≒11.3° と求められる。従って、受光ビーム内の
最大角度β=17.1°となり、検出光学系により集光され
るべきビームの射出角、即ち検出光学系の光軸の傾き角
は、B=14.2°となる。これらはほぼ前述の条件を満
足している。
Preferred examples of numerical values obtained from such a viewpoint are as follows. A = 45 °, NA 1 = 0.0357 (corresponding to F / 14), d = 2.3,
When n = 1.5, M = 3.5 and δ = 0.2, β ′ ≒ 11.3 ° is obtained. Accordingly, the maximum angle β in the received light beam is 17.1 °, and the exit angle of the beam to be collected by the detection optical system, that is, the inclination angle of the optical axis of the detection optical system is B = 14.2 °. These almost satisfy the above-mentioned conditions.

【0023】また、一般に被検透明基板の裏面50b から
の散乱光のうち、ビームスポットの走査軌跡に垂直な方
向の光の散乱光強度が強く迷光になり易い傾向にある
が、上記の構成においては、照射光学系10の光軸を挟ん
で、光スポットの走査方向に偏芯して並列に対象に配置
された2つの受光対物レンズを有する構成として、検出
光学系を二組持っていることにより、検出精度の向上が
可能である。すなわち、被検透明基板50上のゴミやホコ
リ等の異物からの散乱光はほぼ一様であるから、並列に
対象配置した二組の検出光学系による検出信号のアンド
を取る等、両者の信号を比較することによって、迷光に
よるノイズを取り除くことがで容易となるのである。
In general, of the scattered light from the back surface 50b of the transparent substrate to be inspected, the intensity of the scattered light in the direction perpendicular to the scanning trajectory of the beam spot tends to be strong and likely to become stray light. Has two sets of detection optical systems as a configuration having two light-receiving objective lenses eccentrically arranged in parallel in the scanning direction of the light spot with the optical axis of the irradiation optical system 10 interposed therebetween. Thereby, the detection accuracy can be improved. That is, since the scattered light from foreign substances such as dust and dust on the transparent substrate 50 to be inspected is substantially uniform, the signals of both signals are taken, such as the AND of the detection signals by the two sets of detection optical systems arranged in parallel. , It is easy to remove noise due to stray light.

【0024】尚、本実施例の構成においては、被検透明
基板50としてのレチクルの厚さが変化した場合には、受
光対物レンズの光軸方向の移動によりピント合わせを行
い、また遮光板を偏芯移動させてスリット開口の位置を
調整することによって、対応することが可能である。
In the configuration of the present embodiment, when the thickness of the reticle as the test transparent substrate 50 changes, focusing is performed by moving the light receiving objective lens in the optical axis direction, and the light shielding plate is moved. It is possible to cope by adjusting the position of the slit opening by eccentric movement.

【0025】[0025]

【発明の効果】以上のように本発明の検査装置によれ
ば、被検透明物体としてのレチクル等の表面検査の時
に、裏面に形成されたパターンから発生する迷光を良好
に遮光することができるので、S/Nが高く誤検出の少
ない検査が可能となる。
As described above, according to the inspection apparatus of the present invention, when inspecting the surface of a reticle or the like as a transparent object to be inspected, stray light generated from the pattern formed on the back surface can be satisfactorily shielded. Therefore, an inspection with a high S / N and a small number of erroneous detections can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による検査装置の基本構成を示す断面光
路図。
FIG. 1 is a sectional optical path diagram showing a basic configuration of an inspection device according to the present invention.

【図2】本発明における条件を説明するための拡大光路
図。
FIG. 2 is an enlarged optical path diagram for explaining conditions in the present invention.

【図3】本発明による実施例の構成を示す斜視図。FIG. 3 is a perspective view showing the configuration of an embodiment according to the present invention.

【主要部分の符号の説明】[Description of Signs of Main Parts]

10…照射光学系 20…検出光学系 50…被検透明基板 51…スポット走査軌跡 22…受光対物レンズ 24…スリット開口 25…フィールドレンズ 60…検出手段 10 ... irradiation optical system 20 ... detection optical system 50 ... testing transparent substrate 51 ... spot scanning locus 22 ... light receiving objective lens 24 ... slit aperture 25 ... field lens 60 ... detection means

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】被検透明基板上に光スポットを形成して所
定の方向で走査するための照射光学系と、該被検透明基
板上表面からの反射散乱光を検出するための検出光学系
とを有する光学的検査装置において、 前記検出光学系は、前記被検透明基板上の光スポットの
像を形成するための受光対物レンズと、該受光対物レン
ズの像面上にて前記光スポットの走査軌跡と共役なスリ
ット開口を有する遮光板と、該遮光板のスリット開口を
通過する光をフィールドレンズを通して検出する光検出
手段とを有し、 前記被検透明基板上において前記検出光学系の光軸は前
記照射光学系の光軸と同一方向に傾斜し、 前記照射光学系のビーム照射角、前記検出光学系のビー
ム入射角、前記受光光学系の前記受光対物レンズの倍率
及び前記スリットの幅は、前記被検透明基板の裏面から
の散乱光が前記スリット内に入射しないように構成さ
れ、 前記照射光学系による光スポットの前記被検透明基板表
面への入射角をA、前記照射光学系の被検透明基板側の
開口数をNA1、前記検出光学系の受光角度をB、前記受
光対物レンズの被検透明基板側の開口数をNA2、前記ス
リットの幅をδ、前記受光光学系による前記スリット開
口と前記被検透明基板との間の結像倍率をM、前記被検
透明基板の厚さをd、屈折率をnとするとき、 【数1】 の条件を満たすことを特徴とする透明基板の検査装置。
An irradiation optical system for forming a light spot on a test transparent substrate and scanning in a predetermined direction, and a detection optical system for detecting scattered light reflected from the surface of the test transparent substrate. In the optical inspection device having, the detection optical system, the light receiving objective lens for forming an image of the light spot on the test transparent substrate, and the light spot on the image plane of the light receiving objective lens A light-shielding plate having a slit opening conjugate with the scanning trajectory; and light detecting means for detecting light passing through the slit opening of the light-shielding plate through a field lens, and light of the detection optical system on the test transparent substrate. The axis is inclined in the same direction as the optical axis of the irradiation optical system, the beam irradiation angle of the irradiation optical system, the beam incidence angle of the detection optical system, the magnification of the light receiving objective lens of the light receiving optical system, and the width of the slit. Is The scattered light from the back surface of the inspection transparent substrate is configured not to enter the slit, the incident angle of the light spot by the irradiation optical system on the surface of the test transparent substrate is A, The numerical aperture on the substrate side is NA1, the light receiving angle of the detection optical system is B, the numerical aperture of the light receiving objective lens on the side of the transparent substrate to be inspected is NA2, the width of the slit is δ, and the slit opening by the light receiving optical system is When the imaging magnification with the transparent substrate to be inspected is M, the thickness of the transparent substrate to be inspected is d, and the refractive index is n, An inspection apparatus for a transparent substrate, characterized by satisfying the following conditions.
【請求項2】前記受光光学系は、前記照射光学系の光軸
を挟んで、前記光スポットの走査方向に偏芯して並列配
置された2つの受光対物レンズを有することを特徴とす
る請求項1記載の透明基板の光学的検査装置。
2. The light receiving optical system according to claim 1, wherein said light receiving optical system includes two light receiving objective lenses eccentrically arranged in a scanning direction of said light spot with respect to an optical axis of said irradiation optical system. Item 2. An optical inspection device for a transparent substrate according to Item 1.
【請求項3】前記受光光学系による前記スリット開口と
前記被検透明基板との間の結像倍率Mは、M≧2.5で
あることを特徴とする請求項1または2記載の透明基板
の光学的検査装置。
3. The transparent substrate according to claim 1, wherein an imaging magnification M between the slit opening and the test transparent substrate by the light receiving optical system is M ≧ 2.5. Optical inspection equipment.
【請求項4】前記受光対物レンズの光軸方向の移動によ
り前記透明基板のピント合わせを行うことを特徴とする
請求項1乃至3のいずれか一項記載の透明基板の光学的
検査装置。
4. The optical inspection apparatus for a transparent substrate according to claim 1, wherein the transparent substrate is focused by moving the light receiving objective lens in the optical axis direction.
【請求項5】前記遮光板を偏芯移動させて前記スリット
開口の位置を調整することにより前記透明基板のピント
合わせを行うことを特徴とする請求項1乃至3のいずれ
か一項記載の透明基板の光学的検査装置。
5. The transparent substrate according to claim 1, wherein the transparent substrate is focused by adjusting the position of the slit opening by eccentrically moving the light shielding plate. Optical inspection equipment for substrates.
JP03039871A 1991-03-06 1991-03-06 Optical inspection equipment for transparent substrates Expired - Fee Related JP3106521B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03039871A JP3106521B2 (en) 1991-03-06 1991-03-06 Optical inspection equipment for transparent substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03039871A JP3106521B2 (en) 1991-03-06 1991-03-06 Optical inspection equipment for transparent substrates

Publications (2)

Publication Number Publication Date
JPH04277643A JPH04277643A (en) 1992-10-02
JP3106521B2 true JP3106521B2 (en) 2000-11-06

Family

ID=12565046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03039871A Expired - Fee Related JP3106521B2 (en) 1991-03-06 1991-03-06 Optical inspection equipment for transparent substrates

Country Status (1)

Country Link
JP (1) JP3106521B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020252A1 (en) * 1999-09-16 2001-03-22 On-Line Technologies, Inc. Method and apparatus for performing optical measurements of layers and surface properties
JP2008292171A (en) * 2007-05-22 2008-12-04 Toray Ind Inc Device and method for inspecting surface, and method for inspecting polymer film surface
JP2014044094A (en) * 2012-08-24 2014-03-13 Hitachi High-Technologies Corp Substrate inspection method and device
WO2020021682A1 (en) * 2018-07-26 2020-01-30 株式会社島津製作所 Light scattering detection device

Also Published As

Publication number Publication date
JPH04277643A (en) 1992-10-02

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