JPS5958819A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS5958819A
JPS5958819A JP57168463A JP16846382A JPS5958819A JP S5958819 A JPS5958819 A JP S5958819A JP 57168463 A JP57168463 A JP 57168463A JP 16846382 A JP16846382 A JP 16846382A JP S5958819 A JPS5958819 A JP S5958819A
Authority
JP
Japan
Prior art keywords
film
thin film
sih4
light
cvd equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57168463A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049369B2 (enExample
Inventor
Kazufumi Azuma
和文 東
Mitsuo Nakatani
中谷　光雄
Kazuo Nate
和男 名手
Masaaki Okunaka
正昭 奥中
Ataru Yokono
中 横野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57168463A priority Critical patent/JPS5958819A/ja
Priority to US06/534,686 priority patent/US4495218A/en
Priority to DE8383109690T priority patent/DE3364979D1/de
Priority to EP83109690A priority patent/EP0104658B1/en
Publication of JPS5958819A publication Critical patent/JPS5958819A/ja
Publication of JPH049369B2 publication Critical patent/JPH049369B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69215—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2922—
    • H10P14/2923—
    • H10P14/3411—
    • H10P14/69433—
    • H10P34/42—
    • H10P34/422—
    • H10P14/6338—
    • H10P14/6682—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
JP57168463A 1982-09-29 1982-09-29 薄膜形成方法 Granted JPS5958819A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57168463A JPS5958819A (ja) 1982-09-29 1982-09-29 薄膜形成方法
US06/534,686 US4495218A (en) 1982-09-29 1983-09-22 Process for forming thin film
DE8383109690T DE3364979D1 (en) 1982-09-29 1983-09-28 Process for forming thin film
EP83109690A EP0104658B1 (en) 1982-09-29 1983-09-28 Process for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57168463A JPS5958819A (ja) 1982-09-29 1982-09-29 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5958819A true JPS5958819A (ja) 1984-04-04
JPH049369B2 JPH049369B2 (enExample) 1992-02-20

Family

ID=15868574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57168463A Granted JPS5958819A (ja) 1982-09-29 1982-09-29 薄膜形成方法

Country Status (4)

Country Link
US (1) US4495218A (enExample)
EP (1) EP0104658B1 (enExample)
JP (1) JPS5958819A (enExample)
DE (1) DE3364979D1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS59147435A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 酸化シリコン膜の形成法
JPS59147437A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 窒化シリコン膜の形成法
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法
JPS6123344A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体集積回路の製造方法
JPS61234534A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
JPS61234533A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
JPS61253870A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd 光起電力素子
JPS61256735A (ja) * 1985-05-10 1986-11-14 Nec Corp 半導体装置及びその製造方法
JPS62226631A (ja) * 1986-03-28 1987-10-05 Agency Of Ind Science & Technol 絶縁膜形成方法

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026664A (ja) * 1983-07-22 1985-02-09 Canon Inc アモルフアスシリコン堆積膜形成法
JPS6094757A (ja) * 1983-10-20 1985-05-27 Fujitsu Ltd 抵抗体
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same
JPS61140175A (ja) * 1984-12-13 1986-06-27 Semiconductor Energy Lab Co Ltd 被膜作製方法
US6784033B1 (en) * 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US4717602A (en) * 1984-03-12 1988-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layers
US4704300A (en) * 1984-03-12 1987-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layer
US4782040A (en) * 1984-04-09 1988-11-01 Dow Corning Corporation Porous materials having a dual surface
US4683146A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Process for producing deposition films
US4683147A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method of forming deposition film
US4683144A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method for forming a deposited film
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
JPS6165441A (ja) * 1984-09-07 1986-04-04 Mitsubishi Electric Corp プラズマ窒化シリコン絶縁膜の処理方法
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US4811684A (en) * 1984-11-26 1989-03-14 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus, with deposition prevention in light source chamber
US4699801A (en) * 1985-02-28 1987-10-13 Kabuskiki Kaisha Toshiba Semiconductor device
FR2579825B1 (fr) * 1985-03-28 1991-05-24 Sumitomo Electric Industries Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise
US4569855A (en) * 1985-04-11 1986-02-11 Canon Kabushiki Kaisha Method of forming deposition film
US4759993A (en) * 1985-04-25 1988-07-26 Ovonic Synthetic Materials Co., Inc. Plasma chemical vapor deposition SiO2-x coated articles and plasma assisted chemical vapor deposition method of applying the coating
US4661679A (en) * 1985-06-28 1987-04-28 Eaton Corporation Semiconductor laser processing with mirror mask
EP0227839B1 (en) * 1985-07-02 1991-05-15 Semiconductor Energy Laboratory Co., Ltd. Method of forming a thin film
US4631199A (en) * 1985-07-22 1986-12-23 Hughes Aircraft Company Photochemical vapor deposition process for depositing oxide layers
US4918028A (en) * 1986-04-14 1990-04-17 Canon Kabushiki Kaisha Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
JPS62293740A (ja) * 1986-06-13 1987-12-21 Fujitsu Ltd 半導体装置の製造方法
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
US4720395A (en) * 1986-08-25 1988-01-19 Anicon, Inc. Low temperature silicon nitride CVD process
KR910003742B1 (ko) 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
EP0310347B1 (en) * 1987-09-30 1992-11-25 Sumitomo Metal Industries, Ltd. Thin film forming apparatus
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes
US5185179A (en) * 1988-10-11 1993-02-09 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and products thereof
US4940505A (en) * 1988-12-02 1990-07-10 Eaton Corporation Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation
DE3919538A1 (de) * 1989-06-15 1990-12-20 Asea Brown Boveri Beschichtungsvorrichtung
GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
JP3038413B2 (ja) * 1990-12-21 2000-05-08 大阪瓦斯株式会社 光ｃｖｄ法による膜作成装置
JPH06333857A (ja) * 1993-05-27 1994-12-02 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
WO1996009900A1 (en) * 1994-09-28 1996-04-04 Midwest Research Institute Application of optical processing for growth of silicon dioxide
US5686320A (en) * 1995-01-20 1997-11-11 Goldstar Co., Ltd. Method for forming semiconductor layer of thin film transistor by using temperature difference
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
AU7366396A (en) * 1995-10-24 1997-05-15 Tetra Laval Holdings & Finance Sa Apparatus and method for manufacturing a packaging material
US5976993A (en) 1996-03-28 1999-11-02 Applied Materials, Inc. Method for reducing the intrinsic stress of high density plasma films
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
US6628237B1 (en) * 2000-03-25 2003-09-30 Marconi Communications Inc. Remote communication using slot antenna
JP2002198368A (ja) * 2000-12-26 2002-07-12 Nec Corp 半導体装置の製造方法
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
WO2004009861A2 (en) * 2002-07-19 2004-01-29 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) * 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US20040259379A1 (en) * 2003-06-23 2004-12-23 Yoshi Ono Low temperature nitridation of silicon
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
DE102006032936B4 (de) * 2006-07-17 2012-01-05 Wolf Gmbh Verwendung einer Schicht aus stark oxidierten Si-Nanokristallen zur Beschichtung von Kunststoffen
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
WO2015069296A1 (en) * 2013-11-11 2015-05-14 Empire Technology Development Llc Strengthened glass substrates

Family Cites Families (6)

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US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
US3271180A (en) * 1962-06-19 1966-09-06 Ibm Photolytic processes for fabricating thin film patterns
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
JPS5772318A (en) * 1980-10-24 1982-05-06 Seiko Epson Corp Vapor growth method
US4348428A (en) * 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS59147435A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 酸化シリコン膜の形成法
JPS59147437A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 窒化シリコン膜の形成法
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法
JPS6123344A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体集積回路の製造方法
JPS61234534A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
JPS61234533A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
JPS61253870A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd 光起電力素子
JPS61256735A (ja) * 1985-05-10 1986-11-14 Nec Corp 半導体装置及びその製造方法
JPS62226631A (ja) * 1986-03-28 1987-10-05 Agency Of Ind Science & Technol 絶縁膜形成方法

Also Published As

Publication number Publication date
DE3364979D1 (en) 1986-09-04
EP0104658A1 (en) 1984-04-04
JPH049369B2 (enExample) 1992-02-20
EP0104658B1 (en) 1986-07-30
US4495218A (en) 1985-01-22

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