FR2579825B1 - Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise - Google Patents

Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise

Info

Publication number
FR2579825B1
FR2579825B1 FR868604451A FR8604451A FR2579825B1 FR 2579825 B1 FR2579825 B1 FR 2579825B1 FR 868604451 A FR868604451 A FR 868604451A FR 8604451 A FR8604451 A FR 8604451A FR 2579825 B1 FR2579825 B1 FR 2579825B1
Authority
FR
France
Prior art keywords
articles
making same
semiconductor element
semiconductor
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR868604451A
Other languages
English (en)
Other versions
FR2579825A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60065513A external-priority patent/JPS61224370A/ja
Priority claimed from JP60065514A external-priority patent/JPS61224353A/ja
Priority claimed from JP60065515A external-priority patent/JPS61223750A/ja
Priority claimed from JP60120176A external-priority patent/JPS61278132A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of FR2579825A1 publication Critical patent/FR2579825A1/fr
Application granted granted Critical
Publication of FR2579825B1 publication Critical patent/FR2579825B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR868604451A 1985-03-28 1986-03-27 Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise Expired - Fee Related FR2579825B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP60065513A JPS61224370A (ja) 1985-03-28 1985-03-28 太陽電池
JP60065514A JPS61224353A (ja) 1985-03-28 1985-03-28 イメ−ジセンサ−
JP60065515A JPS61223750A (ja) 1985-03-28 1985-03-28 電子写真感光体
JP60120176A JPS61278132A (ja) 1985-06-03 1985-06-03 水素化アモルフアスＳｉＧｅ膜の形成方法

Publications (2)

Publication Number Publication Date
FR2579825A1 FR2579825A1 (fr) 1986-10-03
FR2579825B1 true FR2579825B1 (fr) 1991-05-24

Family

ID=27464588

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868604451A Expired - Fee Related FR2579825B1 (fr) 1985-03-28 1986-03-27 Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise

Country Status (3)

Country Link
US (1) US5011759A (fr)
DE (1) DE3610401A1 (fr)
FR (1) FR2579825B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232868A (en) * 1988-10-04 1993-08-03 Agency Of Industrial Science And Technology Method for forming a thin semiconductor film
DE69115353T2 (de) * 1990-05-30 1996-05-09 Hitachi Ltd Laserbearbeitungsgerät und dessen Verfahren
JP2954039B2 (ja) * 1996-09-05 1999-09-27 日本電気株式会社 ＳｉＧｅ薄膜の成膜方法
US6087580A (en) * 1996-12-12 2000-07-11 Energy Conversion Devices, Inc. Semiconductor having large volume fraction of intermediate range order material
DE19962896A1 (de) * 1999-10-13 2001-05-03 Univ Konstanz Verfahren und Vorrichtung zur Herstellung von Solarzellen
CA2387510A1 (fr) 1999-10-13 2001-04-19 Universitat Konstanz Procede et dispositif pour realiser des piles solaires
DE102010002405A1 (de) * 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
JPS58159842A (ja) * 1982-03-17 1983-09-22 Ricoh Co Ltd 感光体の製造方法
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
JPS58192044A (ja) * 1982-05-06 1983-11-09 Konishiroku Photo Ind Co Ltd 感光体
US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS6045078A (ja) * 1983-08-23 1985-03-11 Canon Inc 光導電部材
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same
JPH07107190B2 (ja) * 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法

Also Published As

Publication number Publication date
US5011759A (en) 1991-04-30
DE3610401C2 (fr) 1991-10-17
DE3610401A1 (de) 1987-02-12
FR2579825A1 (fr) 1986-10-03

Similar Documents

Publication Publication Date Title
KR920003832A (ko) 반도체 장치 제조 방법
KR880701023A (ko) 반도체 장치 제조 방법
KR880004552A (ko) 반도체장치 제조방법
KR870011686A (ko) 반도체장치 및 그 제조방법
KR880701461A (ko) 반도체 소자 제조공정
KR850006258A (ko) 반도체장치 제조방법
KR860006844A (ko) 반도체장치 및 그 제조방법
KR870007751A (ko) 티타늄-구리-니켈계 용가재, 이용 가재를 사용한 납땜 접합방법 및 이 방법에 의한 납땜 접합제품
IT8348303A0 (it) Soluzioni di amminoacidi per nutrizione parenterale e procedimento di formulazione
KR870009477A (ko) 반도체장치와 그 제조방법
DE3684676D1 (de) Verfahren zum herstellen von halbleitersubstraten.
KR880002274A (ko) 바이폴라형 반도체장치의 제조방법
KR880701457A (ko) 반도체 장치 제조 방법
KR840008214A (ko) 반도체장치 및 그 제조방법
KR860000710A (ko) 반도체장치 제조방법
KR890700425A (ko) 반도체 다이 접합방법
KR890004398A (ko) 반도체장치 및 그의 제조방법
KR870008394A (ko) 반도체장치 및 그 제조방법
FR2579825B1 (fr) Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise
DE3650186T2 (de) Halbleiteranordnung und Verfahren zu deren Herstellung.
KR880701968A (ko) 반도체장치 및 그 제조방법
IT1205164B (it) Copolimero idrofilo e metodo per la sua produzione
KR860007756A (ko) 반도체장치와 그 제조방법
DE3850850D1 (de) Koplanares verbindungsverfahren zwischen einem halbleiterwürfel und einem siliciumsubstrat.
IT8520504A0 (it) Apparecchio e metodo per il confezionamento perfezionato di dispositivi semiconduttori.

Legal Events

Date Code Title Description
ST Notification of lapse