JPS6145707B2 - - Google Patents
Info
- Publication number
- JPS6145707B2 JPS6145707B2 JP58063389A JP6338983A JPS6145707B2 JP S6145707 B2 JPS6145707 B2 JP S6145707B2 JP 58063389 A JP58063389 A JP 58063389A JP 6338983 A JP6338983 A JP 6338983A JP S6145707 B2 JPS6145707 B2 JP S6145707B2
- Authority
- JP
- Japan
- Prior art keywords
- silane
- silicon
- container
- reaction
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58063389A JPS59190209A (ja) | 1983-04-11 | 1983-04-11 | シリコン被膜作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58063389A JPS59190209A (ja) | 1983-04-11 | 1983-04-11 | シリコン被膜作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59190209A JPS59190209A (ja) | 1984-10-29 |
| JPS6145707B2 true JPS6145707B2 (enExample) | 1986-10-09 |
Family
ID=13227891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58063389A Granted JPS59190209A (ja) | 1983-04-11 | 1983-04-11 | シリコン被膜作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59190209A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155610A (ja) * | 1986-12-18 | 1988-06-28 | Sanyo Electric Co Ltd | 半導体膜の製造方法 |
| JP2528367B2 (ja) * | 1989-11-02 | 1996-08-28 | 住友シチックス株式会社 | 多結晶シリコンの加熱装置 |
| JP4798719B2 (ja) * | 2005-01-26 | 2011-10-19 | 株式会社日立メディコ | 圧迫部材、超音波探触子及び超音波診断装置 |
| CN100544678C (zh) | 2005-05-09 | 2009-09-30 | 株式会社日立医药 | 超声波诊断装置 |
| EP2817433B1 (en) * | 2012-02-23 | 2021-09-29 | Pilkington Group Limited | Chemical vapor deposition process for depositing a silica coating on a glass substrate |
-
1983
- 1983-04-11 JP JP58063389A patent/JPS59190209A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59190209A (ja) | 1984-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0104658B1 (en) | Process for forming thin film | |
| US5376591A (en) | Method for manufacturing semiconductor device | |
| JP4555410B2 (ja) | 半導体上に酸化膜を形成する装置及び方法 | |
| JPH07106256A (ja) | 膜形成方法 | |
| KR20120042689A (ko) | 다결정 실리콘 봉의 제조 방법 | |
| CN102597309A (zh) | 去除沉积物的方法 | |
| CN116254518A (zh) | 氮化硅薄膜的制备方法 | |
| JPH06168937A (ja) | シリコン酸化膜の製造方法 | |
| JP2588446B2 (ja) | 半導体装置 | |
| JPS59190209A (ja) | シリコン被膜作製方法 | |
| JPS59188913A (ja) | 光cvd装置 | |
| Park et al. | Effects of chlorine addition on the silicon dioxide properties deposited with remote plasma enhanced chemical vapor deposition at low temperatures | |
| JPS6145706B2 (enExample) | ||
| JPH07221026A (ja) | 高品質半導体薄膜の形成方法 | |
| JPS6241164B2 (enExample) | ||
| JP2654456B2 (ja) | 高品質igfetの作製方法 | |
| Yi et al. | The effects of deposition variables on deposition rate in the chemical vapour deposition of silicon nitride | |
| Kim et al. | Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition | |
| JP2001352087A (ja) | シリコン膜及びその製造方法 | |
| JPH0463536B2 (enExample) | ||
| JPS631242B2 (enExample) | ||
| JPS6125213B2 (enExample) | ||
| JPS59162120A (ja) | 気相反応シラン精製方法 | |
| JPS60190564A (ja) | 窒化珪素作製方法 | |
| JP2620063B2 (ja) | 半導体装置 |