JPS5954960U - 半導体装置の電極構造 - Google Patents

半導体装置の電極構造

Info

Publication number
JPS5954960U
JPS5954960U JP15019482U JP15019482U JPS5954960U JP S5954960 U JPS5954960 U JP S5954960U JP 15019482 U JP15019482 U JP 15019482U JP 15019482 U JP15019482 U JP 15019482U JP S5954960 U JPS5954960 U JP S5954960U
Authority
JP
Japan
Prior art keywords
electrode structure
semiconductor devices
electrode
oxide film
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15019482U
Other languages
English (en)
Other versions
JPH0440271Y2 (ja
Inventor
伊澤 暢哉
樋口 泰之
Original Assignee
ロ−ム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロ−ム株式会社 filed Critical ロ−ム株式会社
Priority to JP15019482U priority Critical patent/JPS5954960U/ja
Publication of JPS5954960U publication Critical patent/JPS5954960U/ja
Application granted granted Critical
Publication of JPH0440271Y2 publication Critical patent/JPH0440271Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第1図は従来の半導体装置の電極構造を示す断面図、第
2図はこの考案の実施例を示す平面図、第3図は第2図
の■−■線に沿う断面図、第4図はこの考案の他の実施
例を示す平面図、第5図は第4図の■−■線に沿う断面
図である。 2.12・・・・・・半導体基板、16・・・・・・薄
膜抵抗、30・・・・・・電極形成部、32・・・・・
・電極。 第3図 第5図

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板の酸化膜の表面に形成した半導体素子の電極
    形成部位に、前記酸化膜の一部を覆って電極を形成した
    ことを特徴とする半導体装置の電極構造。
JP15019482U 1982-10-02 1982-10-02 半導体装置の電極構造 Granted JPS5954960U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15019482U JPS5954960U (ja) 1982-10-02 1982-10-02 半導体装置の電極構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15019482U JPS5954960U (ja) 1982-10-02 1982-10-02 半導体装置の電極構造

Publications (2)

Publication Number Publication Date
JPS5954960U true JPS5954960U (ja) 1984-04-10
JPH0440271Y2 JPH0440271Y2 (ja) 1992-09-21

Family

ID=30333188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15019482U Granted JPS5954960U (ja) 1982-10-02 1982-10-02 半導体装置の電極構造

Country Status (1)

Country Link
JP (1) JPS5954960U (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127587A (ja) * 1973-04-06 1974-12-06
JPS5233261U (ja) * 1975-08-29 1977-03-09
JPS53110465A (en) * 1977-03-09 1978-09-27 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127587A (ja) * 1973-04-06 1974-12-06
JPS5233261U (ja) * 1975-08-29 1977-03-09
JPS53110465A (en) * 1977-03-09 1978-09-27 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0440271Y2 (ja) 1992-09-21

Similar Documents

Publication Publication Date Title
JPS5954960U (ja) 半導体装置の電極構造
JPS60183439U (ja) 集積回路
JPS592159U (ja) トランジスタ装置
JPS60942U (ja) 半導体装置
JPS5883149U (ja) 半導体装置
JPS58109248U (ja) 半導体素子
JPS5916165U (ja) 磁気抵抗素子
JPS60181056U (ja) 半導体装置の電極
JPS5954961U (ja) 半導体装置
JPS5996853U (ja) 半導体集積回路装置における半導体抵抗
JPS58177944U (ja) 半導体装置
JPS6134733U (ja) 半導体ウエハ
JPS6068649U (ja) 半導体集積回路装置
JPS58159764U (ja) 磁電変換素子
JPS60154881U (ja) 半導体x線検出器
JPS5846444U (ja) 半導体装置
JPS6127255U (ja) ボンデイングパツドに表示を付けた半導体素子
JPS5892733U (ja) 半導体装置の電極構造
JPS58444U (ja) 半導体装置の多層配線構造
JPS592160U (ja) 半導体装置の接続構造
JPS5931252U (ja) 非晶質光半導体装置
JPS5853160U (ja) 非晶質半導体装置
JPS60136155U (ja) 半導体装置
JPS58147201U (ja) 抵抗器
JPS60179050U (ja) 半導体装置用リ−ドフレ−ム