JPS59224176A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS59224176A
JPS59224176A JP58098844A JP9884483A JPS59224176A JP S59224176 A JPS59224176 A JP S59224176A JP 58098844 A JP58098844 A JP 58098844A JP 9884483 A JP9884483 A JP 9884483A JP S59224176 A JPS59224176 A JP S59224176A
Authority
JP
Japan
Prior art keywords
film
gate electrode
active layer
photoresist
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58098844A
Other languages
English (en)
Japanese (ja)
Other versions
JPH047101B2 (enExample
Inventor
Yoichi Aono
青野　洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58098844A priority Critical patent/JPS59224176A/ja
Publication of JPS59224176A publication Critical patent/JPS59224176A/ja
Publication of JPH047101B2 publication Critical patent/JPH047101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP58098844A 1983-06-03 1983-06-03 電界効果トランジスタの製造方法 Granted JPS59224176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58098844A JPS59224176A (ja) 1983-06-03 1983-06-03 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58098844A JPS59224176A (ja) 1983-06-03 1983-06-03 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59224176A true JPS59224176A (ja) 1984-12-17
JPH047101B2 JPH047101B2 (enExample) 1992-02-07

Family

ID=14230553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58098844A Granted JPS59224176A (ja) 1983-06-03 1983-06-03 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59224176A (enExample)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370770A (en) * 1976-12-07 1978-06-23 Nec Corp Production of schottky barrier gate type field effect transistor
JPS5382267A (en) * 1976-12-28 1978-07-20 Nec Corp Anodizing method
JPS54162461A (en) * 1978-06-13 1979-12-24 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5595371A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5730376A (en) * 1980-07-30 1982-02-18 Fujitsu Ltd Manufacture of schottky barrier fet
JPS5789261A (en) * 1980-11-25 1982-06-03 Fujitsu Ltd Manufacture of semiconductor device
JPS57141919A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370770A (en) * 1976-12-07 1978-06-23 Nec Corp Production of schottky barrier gate type field effect transistor
JPS5382267A (en) * 1976-12-28 1978-07-20 Nec Corp Anodizing method
JPS54162461A (en) * 1978-06-13 1979-12-24 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5595371A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5730376A (en) * 1980-07-30 1982-02-18 Fujitsu Ltd Manufacture of schottky barrier fet
JPS5789261A (en) * 1980-11-25 1982-06-03 Fujitsu Ltd Manufacture of semiconductor device
JPS57141919A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH047101B2 (enExample) 1992-02-07

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