JPS59208748A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59208748A JPS59208748A JP8304583A JP8304583A JPS59208748A JP S59208748 A JPS59208748 A JP S59208748A JP 8304583 A JP8304583 A JP 8304583A JP 8304583 A JP8304583 A JP 8304583A JP S59208748 A JPS59208748 A JP S59208748A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- contact
- aperture
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 14
- 229920000620 organic polymer Polymers 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002120 nanofilm Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 60
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 239000011229 interlayer Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8304583A JPS59208748A (ja) | 1983-05-12 | 1983-05-12 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8304583A JPS59208748A (ja) | 1983-05-12 | 1983-05-12 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208748A true JPS59208748A (ja) | 1984-11-27 |
| JPH0531301B2 JPH0531301B2 (enExample) | 1993-05-12 |
Family
ID=13791227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8304583A Granted JPS59208748A (ja) | 1983-05-12 | 1983-05-12 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208748A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100712487B1 (ko) * | 2000-09-29 | 2007-04-27 | 삼성전자주식회사 | 접촉 저항을 줄일 수 있는 비아홀 플러그 및 그 형성 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745952A (en) * | 1980-08-18 | 1982-03-16 | Ibm | Method of producing integrated circuit |
-
1983
- 1983-05-12 JP JP8304583A patent/JPS59208748A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745952A (en) * | 1980-08-18 | 1982-03-16 | Ibm | Method of producing integrated circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100712487B1 (ko) * | 2000-09-29 | 2007-04-27 | 삼성전자주식회사 | 접촉 저항을 줄일 수 있는 비아홀 플러그 및 그 형성 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0531301B2 (enExample) | 1993-05-12 |
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