JPS5919355A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5919355A
JPS5919355A JP12980482A JP12980482A JPS5919355A JP S5919355 A JPS5919355 A JP S5919355A JP 12980482 A JP12980482 A JP 12980482A JP 12980482 A JP12980482 A JP 12980482A JP S5919355 A JPS5919355 A JP S5919355A
Authority
JP
Japan
Prior art keywords
layer
film
pattern
reactive ion
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12980482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342412B2 (enExample
Inventor
Masuyuki Taki
滝　益志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12980482A priority Critical patent/JPS5919355A/ja
Publication of JPS5919355A publication Critical patent/JPS5919355A/ja
Publication of JPS6342412B2 publication Critical patent/JPS6342412B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP12980482A 1982-07-26 1982-07-26 半導体装置の製造方法 Granted JPS5919355A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12980482A JPS5919355A (ja) 1982-07-26 1982-07-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12980482A JPS5919355A (ja) 1982-07-26 1982-07-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5919355A true JPS5919355A (ja) 1984-01-31
JPS6342412B2 JPS6342412B2 (enExample) 1988-08-23

Family

ID=15018631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12980482A Granted JPS5919355A (ja) 1982-07-26 1982-07-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5919355A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137997A (ja) * 1983-01-28 1984-08-08 カシオ計算機株式会社 波形メモリ読出し方式
JPS60142400A (ja) * 1983-12-28 1985-07-27 カシオ計算機株式会社 楽音発生器の高調波制限装置
US5229307A (en) * 1985-01-22 1993-07-20 National Semiconductor Corporation Method of making extended silicide and external contact
US7067731B2 (en) 1999-11-29 2006-06-27 Yamaha Corporation Sound source circuit and telephone terminal using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328035U (enExample) * 1990-07-12 1991-03-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137997A (ja) * 1983-01-28 1984-08-08 カシオ計算機株式会社 波形メモリ読出し方式
JPS60142400A (ja) * 1983-12-28 1985-07-27 カシオ計算機株式会社 楽音発生器の高調波制限装置
US5229307A (en) * 1985-01-22 1993-07-20 National Semiconductor Corporation Method of making extended silicide and external contact
US7067731B2 (en) 1999-11-29 2006-06-27 Yamaha Corporation Sound source circuit and telephone terminal using same

Also Published As

Publication number Publication date
JPS6342412B2 (enExample) 1988-08-23

Similar Documents

Publication Publication Date Title
US4076860A (en) Method of forming electrode wirings in semiconductor devices
US3692574A (en) Method of forming seeding sites on a semiconductor substrate
JPS5919355A (ja) 半導体装置の製造方法
JP2822430B2 (ja) 層間絶縁膜の形成方法
JPS63236319A (ja) 半導体装置の製造方法
JPS6211068B2 (enExample)
JPH0225024A (ja) 半導体装置の製造方法
JPH0458167B2 (enExample)
JPS5933833A (ja) 半導体装置の製造方法
JPH038581B2 (enExample)
JPH0758706B2 (ja) 半導体装置の製造方法
JPS5833853A (ja) 半導体装置の製造方法
JPS59926A (ja) アルミニウム膜の選択エツチング法
JPS59175124A (ja) 半導体装置の製造方法
JP2937537B2 (ja) パターン形成方法
JPH0314260A (ja) 半導体装置の製造方法
JPH058856B2 (enExample)
JPS61144083A (ja) ジヨセフソン接合素子の形成方法
JPS62279633A (ja) パタ−ン形成方法
JPS59123246A (ja) 微細パタ−ン形成方法
JPH0324779B2 (enExample)
JPS63220548A (ja) 半導体装置の製造方法
JPS6226843A (ja) 電極金属配線パタ−ンの形成方法
JPS61144084A (ja) ジョセフソン接合素子の形成方法
JPS58143529A (ja) パタ−ン形成方法