JPS5914676A - 縦型電界効果トランジスタの製造方法 - Google Patents

縦型電界効果トランジスタの製造方法

Info

Publication number
JPS5914676A
JPS5914676A JP57123895A JP12389582A JPS5914676A JP S5914676 A JPS5914676 A JP S5914676A JP 57123895 A JP57123895 A JP 57123895A JP 12389582 A JP12389582 A JP 12389582A JP S5914676 A JPS5914676 A JP S5914676A
Authority
JP
Japan
Prior art keywords
region
conductivity type
substrate
layer
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57123895A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547982B2 (enExample
Inventor
Masanori Yamamoto
山本　正徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57123895A priority Critical patent/JPS5914676A/ja
Publication of JPS5914676A publication Critical patent/JPS5914676A/ja
Publication of JPH0547982B2 publication Critical patent/JPH0547982B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP57123895A 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法 Granted JPS5914676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57123895A JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57123895A JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5914676A true JPS5914676A (ja) 1984-01-25
JPH0547982B2 JPH0547982B2 (enExample) 1993-07-20

Family

ID=14871991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57123895A Granted JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5914676A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648673A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Manufacture of semiconductor device
JPH05145027A (ja) * 1990-12-21 1993-06-11 Siliconix Inc シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路ｍｏｓｆｅｔセルの形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185381A (enExample) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5610971A (en) * 1979-06-29 1981-02-03 Thomson Csf Longitudinal field effect power transistor
JPS5726467A (en) * 1980-07-24 1982-02-12 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185381A (enExample) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5610971A (en) * 1979-06-29 1981-02-03 Thomson Csf Longitudinal field effect power transistor
JPS5726467A (en) * 1980-07-24 1982-02-12 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648673A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Manufacture of semiconductor device
JPH05145027A (ja) * 1990-12-21 1993-06-11 Siliconix Inc シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路ｍｏｓｆｅｔセルの形成方法

Also Published As

Publication number Publication date
JPH0547982B2 (enExample) 1993-07-20

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